BSO207P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS(on) 45 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Type Package Ordering Code BSO207P SO 8 Q67042-S4068 -5.7 A SIS00070 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -5.7 TA=70°C -4.6 Pulsed drain current ID puls Unit -22.8 TA=25°C EAS 44 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 2 W -55... +150 °C Avalanche energy, single pulse ID =-5.7 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-5.7A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2001-11-20 BSO207P Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 50 @ min. footprint, t < 10s - - 110 @ 6 cm 2 cooling area - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =-250µA Gate threshold voltage, VGS = VDS ID =-40µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 47 70 mΩ RDS(on) - 32 45 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-4.7A Drain-source on-state resistance VGS =-4.5, ID =-5.7A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Page 2 2001-11-20 BSO207P Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 8 16 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-4.6A Input capacitance Ciss VGS =0, VDS =-15V, - 1013 - Output capacitance Coss f=1MHz - 388 - Reverse transfer capacitance Crss - 318 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 9 13.5 Rise time tr ID =-1A, RG=6Ω - 17 25 Turn-off delay time td(off) - 40 60 Fall time tf - 49 65 - -1.8 -2.7 - -7.3 -11 - -15.6 -23.4 V(plateau) VDD =-15V, ID =-5.7A - -1.7 - V IS - - -2.2 A - - -22.8 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-15V, ID =-5.7A VDD =-15V, ID =-5.7A, nC VGS =0 to -4.5V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.88 Reverse recovery time trr VR =-10V, |IF | = |lD |, - 29 36 ns Reverse recovery charge Qrr diF /dt=100A/µs - 12.3 15.4 nC Page 3 -1.32 V 2001-11-20 BSO207P Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V 2.6 BSO207P -6.5 A 2.2 -5.5 2 -5 1.8 -4.5 ID Ptot W BSO207P 1.6 -4 1.4 -3.5 1.2 -3 1 -2.5 0.8 -2 0.6 -1.5 0.4 -1 0.2 -0.5 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T -10 °C 2 BSO207P 10 2 BSO207P K/W /I D A = 10 1 100 µs ) 1 ms Z thJS R tp = 57.0µs S ID -10 1 n (o DS VD 10 ms -10 0 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 single pulse DC 0.02 10 -3 -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -4 -7 10 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2001-11-20 BSO207P Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS BSO207P -14 A BSO207P 150 Ptot = 2W mΩ c h -11 g b ID e f g -9 -2.0 d -2.1 f e -2.2 -8 -7 e -6 120 -1.9 c -10 110 100 f -2.3 90 g -2.4 80 h -2.5 i -4.5 70 60 -5 d 40 c -3 h 50 -4 i 30 b -2 20 VGS [V] = a -1 0 0 d VGS [V] a -1.8 RDS(on) -12 i -0.5 -1 -1.5 -2 -2.5 -3 10 -3.5 -4 V 0 0 -5 c d e f -2.0 -2.1 -2.2 -2.3 -2 g h i -2.4 -2.5 -4.5 -4 -6 -8 -10 A VDS -13 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 35 A S 25 25 - ID g fs 35 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 V 0 0 3 - V GS 5 10 15 20 25 35 A - ID Page 5 2001-11-20 BSO207P Preliminary data 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -5.7 A, VGS = -4.5 V parameter: VGS = VDS , ID = -40 µA 60 1.6 V mΩ - VGS(th) RDS(on) 98% 50 45 40 1.2 98% 1 0.8 typ. typ. 35 0.6 30 0.4 25 0.2 20 -60 -20 20 60 100 2% 0 -60 °C 160 Tj -20 20 60 100 °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSO207P A pF C IF -10 1 Ciss 10 3 Coss -10 0 Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 2.5 5 7.5 10 V 15 - VDS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2001-11-20 BSO207P Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -5.7 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -5.7 A pulsed 45 12 V mJ 10 9 - VGS E AS 35 30 8 7 25 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 6 20 5 15 4 3 10 2 5 1 0 25 45 65 85 105 125 165 °C Tj 0 0 4 8 12 16 20 24 nC 30 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSO207P V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Page 7 2001-11-20 Preliminary data BSO207P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2001-11-20