BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Sillicon planar Zener diodes • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering: 260 °C/10 s at terminals • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS PARAMETER VALUE • Halogen-free according to IEC 61249-2-21 definition UNIT VZ range nom. 3.6 to 200 V Test current IZT 5 to 100 mA VZ specification Pulse current Int. construction Single ORDERING INFORMATION ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZD27C3V6P-M to BZD27C200P-M DEVICE NAME BZD27C3V6P-M to BZD27C200P-M-series-08 3000 per 7" reel (8mm tape) 15 000/box BZD27C3V6P-M to BZD27C200P-M BZD27C3V6P-M to BZD27C200P-M-series-18 10 000 per 13" reel (8 mm tape) 10 000/box PACKAGE PACKAGE NAME WEIGHT DO-219AB (SMF) 15 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 SOLDERING CONDITIONS MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation Non repetitive peak surge power dissipation (2) TEST CONDITION SYMBOL VALUE UNIT TL = 80 °C Ptot 2300 mW TA = 25 °C (1) Ptot 800 mW 100 μs square pulse PZSM 300 W PRSM 150 W PRSM 100 W RthJL 30 K/W RthJA 180 K/W 10/1000 μs waveform (BZD27-C7V5P-M to BZD27-C100P-M) 10/1000 μs waveform (BZD27-C110P-M to BZD27-C200P-M) Junction to lead Junction to ambient air Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick) Junction temperature Storage temperature range Tj 150 °C Tstg - 55 to + 150 °C Notes (1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick) (2) T = 25 °C prior to surge J Rev. 1.2, 29-Nov-11 Document Number: 83307 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE (1) TEST CURRENT VZ at IZT1 IZT1 V mA MARKING CODE MIN. NOM. MAX. 3.6 3.8 REVERSE CURRENT DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT IR at VR ZZ at IZT1 VZ at IZT1 μA MAX. 100 100 V 1 %/°C TYP. MAX. MIN. MAX. 4 8 - 0.14 - 0.04 BZD27C3V6P-M N0 3.4 BZD27C3V9P-M N1 3.7 3.9 4.1 100 50 1 4 8 - 0.14 - 0.04 BZD27C4V3P-M N2 4 4.3 4.6 100 25 1 4 7 - 0.12 - 0.02 BZD27C4V7P-M N3 4.4 4.7 5 100 10 1 3 7 - 0.1 0 BZD27C5V1P-M N4 4.8 5.1 5.4 100 5 1 3 6 - 0.08 0.02 BZD27C5V6P-M N5 5.2 5.6 6 100 10 2 2 4 - 0.04 0.04 BZD27C6V2P-M N6 5.8 6.2 6.6 100 5 2 2 3 - 0.01 0.06 BZD27C6V8P-M N7 6.4 6.8 7.2 100 10 3 1 3 0 0.07 BZD27C7V5P-M N8 7 7.5 7.9 100 50 3 1 2 0 0.07 BZD27C8V2P-M N9 7.7 8.2 8.7 100 10 3 1 2 0.03 0.08 BZD27C9V1P-M O0 8.5 9.1 9.6 50 10 5 2 4 0.03 0.08 BZD27C10P-M O1 9.4 10 10.6 50 7 7.5 2 4 0.05 0.09 BZD27C11P-M O2 10.4 11 11.6 50 4 8.2 4 7 0.05 0.1 BZD27C12P-M O3 11.4 12 12.7 50 3 9.1 4 7 0.05 0.1 BZD27C13P-M O4 12.4 13 14.1 50 2 10 5 10 0.05 0.1 BZD27C15P-M O5 13.8 15 15.6 50 1 11 5 10 0.05 0.1 BZD27C16P-M O6 15.3 16 17.1 25 1 12 6 15 0.06 0.11 BZD27C18P-M O7 16.8 18 19.1 25 1 13 6 15 0.06 0.11 BZD27C20P-M O8 18.8 20 21.2 25 1 15 6 15 0.06 0.11 BZD27C22P-M O9 20.8 22 23.3 25 1 16 6 15 0.06 0.11 BZD27C24P-M P0 22.8 24 25.6 25 1 18 7 15 0.06 0.11 BZD27C27P-M P1 25.1 27 28.9 25 1 20 7 15 0.06 0.11 BZD27C30P-M P2 28 30 32 25 1 22 8 15 0.06 0.11 BZD27C33P-M P3 31 33 35 25 1 24 8 15 0.06 0.11 BZD27C36P-M P4 34 36 38 10 1 27 21 40 0.06 0.11 BZD27C39P-M P5 37 39 41 10 1 30 21 40 0.06 0.11 BZD27C43P-M P6 40 43 46 10 1 33 24 45 0.07 0.12 BZD27C47P-M P7 44 47 50 10 1 36 24 45 0.07 0.12 BZD27C51P-M P8 48 51 54 10 1 39 25 60 0.07 0.12 BZD27C56P-M P9 52 56 60 10 1 43 25 60 0.07 0.12 BZD27C62P-M Q0 58 62 66 10 1 47 25 80 0.08 0.13 BZD27C68P-M Q1 64 68 72 10 1 51 25 80 0.08 0.13 BZD27C75P-M Q2 70 75 79 10 1 56 30 100 0.08 0.13 BZD27C82P-M Q3 77 82 87 10 1 62 30 100 0.08 0.13 BZD27C91P-M Q4 85 91 96 5 1 68 60 200 0.08 0.13 BZD27C100P-M Q5 94 100 106 5 1 75 60 200 0.09 0.13 BZD27C110P-M Q6 104 110 116 5 1 82 80 250 0.09 0.13 BZD27C120P-M Q7 114 120 127 5 1 91 80 250 0.09 0.13 BZD27C130P-M Q8 124 130 141 5 1 100 110 300 0.09 0.13 BZD27C150P-M Q9 138 150 156 5 1 110 130 300 0.09 0.13 BZD27C160P-M R0 153 160 171 5 1 120 150 350 0.09 0.13 BZD27C180P-M R1 168 180 191 5 1 130 180 400 0.09 0.13 BZD27C200P-M R2 188 200 212 5 1 150 200 500 0.09 0.13 Notes • Electrical characteristics when used as regulator diodes • Maximum VF = 1.2 V, at IF = 0.2 A (1) Pulse test: t 5 ms p Rev. 1.2, 29-Nov-11 Document Number: 83307 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE TEST CURRENT REVERSE CURRENT CLAMPING VOLTAGE TEMPERATURE COEFFICIENT VZ at IZT1 IZT1 IR at VR VC at IRSM (1) VZ at IZT1 V mA MARKING CODE MIN. NOM. MAX. μA V MAX. V A MAX. %/C MIN. MAX. BZD27C7V5P-M N8 7 7.5 7.9 100 1500 6.2 11.3 13.3 0 0.07 BZD27C8V2P-M N9 7.7 8.2 8.7 100 1200 6.8 12.3 12.2 0.03 0.08 BZD27C9V1P-M O0 8.5 9.1 9.6 50 100 7.5 13.3 11.3 0.03 0.08 BZD27C10P-M O1 9.4 10 10.6 50 20 8.2 14.8 10.1 0.05 0.09 BZD27C11P-M O2 10.4 11 11.6 50 5 9.1 15.7 9.6 0.05 0.1 BZD27C12P-M O3 11.4 12 12.7 50 5 10 17 8.8 0.05 0.1 BZD27C13P-M O4 12.4 13 14.1 50 5 11 18.9 7.9 0.05 0.1 BZD27C15P-M O5 13.8 15 15.6 50 5 12 20.9 7.2 0.05 0.1 BZD27C16P-M O6 15.3 16 17.1 25 5 13 22.9 6.6 0.06 0.11 BZD27C18P-M O7 16.8 18 19.1 25 5 15 25.6 5.9 0.06 0.11 BZD27C20P-M O8 18.8 20 21.2 25 5 16 28.4 5.3 0.06 0.11 BZD27C22P-M O9 20.8 22 23.3 25 5 18 31 4.8 0.06 0.11 BZD27C24P-M P0 22.8 24 25.6 25 5 20 33.8 4.4 0.06 0.11 BZD27C27P-M P1 25.1 27 28.9 25 5 22 38.1 3.9 0.06 0.11 BZD27C30P-M P2 28 30 32 25 5 24 42.2 3.6 0.06 0.11 BZD27C33P-M P3 31 33 35 25 5 27 46.2 3.2 0.06 0.11 BZD27C36P-M P4 34 36 38 10 5 30 50.1 3 0.06 0.11 BZD27C39P-M P5 37 39 41 10 5 33 54.1 2.8 0.06 0.11 BZD27C43P-M P6 40 43 46 10 5 36 60.7 2.5 0.07 0.12 BZD27C47P-M P7 44 47 50 10 5 39 65.5 2.3 0.07 0.12 BZD27C51P-M P8 48 51 54 10 5 43 70.8 2.1 0.07 0.12 BZD27C56P-M P9 52 56 60 10 5 47 78.6 1.9 0.07 0.12 BZD27C62P-M Q0 58 62 66 10 5 51 86.5 1.7 0.08 0.13 BZD27C68P-M Q1 64 68 72 10 5 56 94.4 1.6 0.08 0.13 BZD27C75P-M Q2 70 75 79 10 5 62 103.5 1.5 0.08 0.13 BZD27C82P-M Q3 77 82 87 10 5 68 114 1.3 0.08 0.13 BZD27C91P-M Q4 85 91 96 5 5 75 126 1.2 0.09 0.13 BZD27C100P-M Q5 94 100 106 5 5 82 139 1.1 0.09 0.13 BZD27C110P-M Q6 104 110 116 5 5 91 139 0.72 0.09 0.13 BZD27C120P-M Q7 114 120 127 5 5 100 152 0.65 0.09 0.13 BZD27C130P-M Q8 124 130 141 5 5 110 169 0.59 0.09 0.13 BZD27C150P-M Q9 138 150 156 5 5 120 187 0.53 0.09 0.13 BZD27C160P-M R0 153 160 171 5 5 130 205 0.48 0.09 0.13 BZD27C180P-M R1 168 180 191 5 5 150 229 0.43 0.09 0.13 BZD27C200P-M R2 188 200 212 5 5 160 254 0.39 0.09 0.13 Notes • Electrical characteristics when used as protection diodes (1) Non-repetitive peak reverse current in accordance with ”IEC 60-1, section 8” (10/1000 μs pulse); see fig. 5. Rev. 1.2, 29-Nov-11 Document Number: 83307 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PRSM - Max. Pulse Power Dissipation (W) IF - Forward Current (A) 10 Max. VF Typ. VF 1 0.1 0.6 0.8 17411 1.0 1.2 1.4 160 140 120 100 80 60 40 20 0 1.6 VF - Forward Voltage (V) 0 50 Fig. 1 - Forward Current vs. Forward Voltage 100 150 200 VZnom - Zener Voltage (V) 17414 Fig. 4 - Maximum Pulse Power Dissipation vs. Zener Voltage CD - Typ. Junction Capacitance (pF) 10 000 C5V1P C6V8P IRSM (%) C18P C12P t1 = 10 µs t2 = 1000 µs 100 1000 90 50 100 C27P C51P 10 C200P 10 0 0.5 17412 1.0 1.5 2.0 2.5 17415 VR - Reverse Voltage (V) Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage t t1 3.0 t2 Fig. 5 - Non-Repetitive Peak Reverse Current Pulse Definition Ptot - Power Dissipation (W) 3.0 Tie point temperature 2.5 2.0 1.5 1.0 Ambient temperature 0.5 0 0 17413 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) Fig. 3 - Power Dissipation vs. Ambient Temperature Rev. 1.2, 29-Nov-11 Document Number: 83307 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.05 (0.002) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) 17247 Rev. 1.2, 29-Nov-11 Document Number: 83307 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors Blistertape Dimensions for SMF in millimeters PS Document-No.: S8-V-3717.02-001 (3) 18513 Rev. 1.2, 29-Nov-11 Document Number: 83307 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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