AME AME8863AEEY330L 600ma cmos ldo Datasheet

AME
AME8863
n General Description
The AME8863 family of positive, linear regulators feature low quiescent current (30µA typ.) with low dropout
voltage, making them ideal for battery applications. The
space-saving SOT-26 package is attractive for "Pocket"
and "Hand Held" applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under the
"Worst" of operating conditions.
An additional feature is a "Power Good" detector, which
pulls low when the output is out of regulation.
600mA CMOS LDO
n Functional Block Diagram
OUT
IN
Overcurrent
Shutdown
Thermal
Shutdown
EN
R1
Vrefx110%
AMP
PG
The AME8863 is stable with an output capacitance of
2.2µF or greater.
n Features
R2
Vref x90%
Vref
GND
l Very Low Dropout Voltage
l Guaranteed 600mA Output
l Accurate to within 1.5%
l 30µA Quiescent Current
l Over-Temperature Shutdown
n Typical Application
l Current Limiting
l Short Circuit Current Fold-back
l Power Good Output Function
INPUT
IN
l Power-Saving Shutdown Mode
PG
l Space-Saving SOT-26
l Factory Pre-set Output Voltages
l Low Temperature Coefficien
l All AME's Lead Free Products Meet RoHS
Standards
OUT
OUTPUT
AME8863
GND
EN
C1
C2
1µF
2.2µF
n Applications
l Instrumentation
l Portable Electronics
l Wireless Devices
l Cordless Phones
l PC Peripherals
l Battery Powered Widgets
l Electronic Scales
Rev.C.03
1
AME
AME8863
600mA CMOS LDO
n Pin Configuration
SOT-26
Top View
6
5
4
AME8863
1. VIN
2. GND
AME8863
3. EN
4. PG
5. GND
1
2
3
6. VOUT
* Die Attach:
Conductive Epoxy
n Ordering Information
AME8863 x x x x x x
Special Feature
Voltage
Number of Pins
Package Type
Operating Ambient Temperature Range
Pin Configuration
Pin
Configuration
A : 1. IN
2. GND
(TSOT-26) 3 . E N
4. PG
5. GND
6. OUT
(SOT-26)
2
Operating Ambient
Temperature
Range
E : -40 OC to +85 O C
Package
Type
Number
of
Pins
E : SOT-2X
Y: 6
Output
Voltage
150:
180:
300:
330:
V=1.5V
V=1.8V
V=3.0V
V=3.3V
Special Feature
L: Low Profile
Y : Lead Free
& Low Profile
Z: Lead Free
Rev.C.03
AME
AME8863
600mA CMOS LDO
n Ordering Information
Part Number
Marking*
Output Voltage
Package
Operating Ambient
Temperature Range
AME8863AEEY150
AZYww
1.5V
SOT-26
- 40oC to + 85oC
AME8863AEEY150L
AZYww
1.5V
TSOT-26
- 40oC to + 85oC
AME8863AEEY150Z
AZYww
1.5V
SOT-26
- 40oC to + 85oC
AME8863AEEY150Y
AZYww
1.5V
TSOT-26
- 40oC to + 85oC
AME8863AEEY180
AZRww
1.8V
SOT-26
- 40oC to + 85oC
AME8863AEEY180L
AZRww
1.8V
TSOT-26
- 40oC to + 85oC
AME8863AEEY180Z
AZRww
1.8V
SOT-26
- 40oC to + 85oC
AME8863AEEY180Y
AZRww
1.8V
TSOT-26
- 40oC to + 85oC
AME8863AEEY300
AZZww
3.0V
SOT-26
- 40oC to + 85oC
AME8863AEEY300L
AZZww
3.0V
TSOT-26
- 40oC to + 85oC
AME8863AEEY300Z
AZZww
3.0V
SOT-26
- 40oC to + 85oC
AME8863AEEY300Y
AZZww
3.0V
TSOT-26
- 40oC to + 85oC
AME8863AEEY330
AZJww
3.3V
SOT-26
- 40oC to + 85oC
AME8863AEEY330L
AZJww
3.3V
TSOT-26
- 40oC to + 85oC
AME8863AEEY330Z
AZJww
3.3V
SOT-26
- 40oC to + 85oC
AME8863AEEY330Y
AZJww
3.3V
TSOT-26
- 40oC to + 85oC
Note: ww represents the date code and pls refer to Date Code Rule before Package Dimension.
* A line on top of the first letter represents lead free plating such as AZYww
Please consult AME sales office or authorized Rep./Distributor for output voltage and package type availability.
Rev.C.03
3
AME
AME8863
600mA CMOS LDO
n Absolute Maximum Ratings
Parameter
Maximum
Unit
7
V
Output Current
PD / (V IN - VO)
A
Output Voltage
GND - 0.3 to VIN + 0.3
V
Input Voltage
B*
ESD Classification
Caution: Stress above the listed absolute rating may cause permanent damage to the device.
* HBM B:2000V~3999V
n Recommended Operating Conditions
Parameter
Symbol
Rating
Unit
Ambient Temperature Range
TA
- 40 to +85
o
C
Junction Temperature Range
TJ
- 40 to +125
o
C
Storage Temperature Range
TSTG
- 65 to +150
o
C
n Thermal Information
Parameter
Package
Die Attach
Thermal Resistance *
(Junction to Case)
Thermal Resistance
(Junction to Ambient)
SOT-26
Conductive Epoxy
Internal Power Dissipation
Symbol
Maximum
Unit
θJC
81
o
C/W
θJA
260
o
C/W
PD
400
mW
Maximum Junction Temperature
150
o
C
Solder Iron (10 Sec)**
350
o
C
* Measure θJC on center of molding compound if IC has no tab.
** MIL-STD-202G 210F
4
Rev.C.03
AME
AME8863
600mA CMOS LDO
n Electrical Specifications
TA = 25OC unless otherwise noted
Parameter
Symbol
Input Voltage
VIN
Output Voltage Accuracy
VO
Dropout Voltage
Output Current
VDROPOUT
Test Condition
IO=1mA
Min
Max
Units
Note 1
6
V
-1.5
1.5
%
1.4V<=VO(NOM)<=2.0
IO=600mA
VO=VO(NOM) -2.0%
Typ
See
chart
2.0V<VO(NOM)<=2.8V
2.8V<VO(NOM)
1400
800
mV
600
IO
VO>1.2V
600
Current Limit
ILIM
VO>1.2V
600
Short Circuit Current
ISC
VO<0.8V
300
600
mA
Quiescent Current
IQ
IO=0mA
30
50
µA
Ground Pin Current
IGND
IO=1mA to 600mA
35
Line Regulation
REGLINE
Load Regulation
REGLOAD
IO=1mA
1.4V < VO <= 2.0V
-0.15
VIN =VO+1 to VO+2
2.0V < VO < 4.0V
-0.1
IO=1mA to 600mA
mA
800
mA
µA
0.15
0.02
0.1
0.2
1
%
%
Over Temerature Shutdown
OTS
150
o
Over Temerature Hysterisis
OTH
30
o
VO Temperature Coefficient
TC
30
Power Supply Rejection
Output Voltage Noise
EN Input Threshold
EN Input Bias Current
PSRR
eN
IO=100mA
f=1kHz
75
CO=2.2µF
ceramic
f=10kHz
55
f=100kHz
30
Co=2.2µF
30
f=10Hz to 100kHz
IO=10mA
C
C
ppm/oC
dB
µVrms
VEH
VIN =2.7V to 6V
2.0
Vin
V
VEL
VIN =2.7V to 6V
0
0.4
V
IEH
VEN =VIN , VIN =2.7V to 6V
0.1
µA
0.5
µA
1
µA
IEL
VEN =0V, VIN =2.7V to 6V
Shutdown Supply Current
ISD
VIN =5V, VO=0V, VEN <VEL
PG Leakage Current
ILC
VPG=6V
1
µA
PG Voltage Rating
VPG
VO in regulation
6
V
PG Voltage Low
VOL
ISINK=0.4mA
0.4
V
0.5
Note1:VIN(min) =VOUT+VDROPOUT
Note2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be
applied before a current source load is applied.
Rev.C.03
5
AME
AME8863
600mA CMOS LDO
n Detailed Description
n Enable
The AME8863 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection, thermal shutdown, and power
good function.
The Enable pin normally floats high. When actively,
pulled low, the PMOS pass transistor shuts off, and all
internal circuits are powered down. In this state, the quiescent current is less than 1µA. This pin behaves much
like an electronic switch.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference.
Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 150oC, or
the current exceeds 600mA. During thermal shutdown,
the output voltage remains low. Normal operation is restored when the junction temperature drops below 120oC.
n Power Good
The AME8863 includes the Power Good feature. When
the output is not within +10% of the specified voltage, it
pulls low. This can occur under the following conditions:
1) Input Voltage too low.
2) During Over-Temperature.
The AME8863 switches from voltage mode to current
mode when the load exceeds the rated output current.
This prevents over-stress. The AME8863 also incorporates current foldback to reduce power dissipation when
the output is short circuited. This feature becomes active when the output drops below 0.8volts, and reduces
the current flow by 65%. Full current is restored when
the voltage exceeds 0.8 volts.
3) During Over-Current.
4) If output is pulled up.
(Note: PG pin is an open-drain output.)
n External Capacitors
The AME8863 is stable with an output capacitor to
ground of 2.2µF or greater. Ceramic capacitors have the
lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively
expensive. One option is to parallel a 0.1µF ceramic
capacitor with a 10µF Aluminum Electrolytic. The benefit
is low ESR, high capacitance, and low overall cost.
A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should
be at least 0.1µF to have a beneficial effect.
All capacitors should be placed in close proximity to
the pins. A "Quiet" ground termination is desirable. This
can be achieved with a "Star" connection.
6
Rev.C.03
AME
AME8863
600mA CMOS LDO
n Characterization Curve
Ground Current vs. Input Voltage
Load Step (1mA-600mA)
45
Vo(10mV/DIV)
85 OC
35
30
25
O
Output
C L=2.2µF
CIN=2.2µF
25 C
20
IL (200mA/DIV)
Ground Current (µ A)
40
15
10
5
0
0
1
2
3
4
5
6
7
I Load
0
8
Input Voltage (V)
TIME (20mS/DIV)
Drop Out Voltage vs. Output Voltage
Power Supply Rejection Ratio
0
Top to Bottom
ILOAD=600mA
ILOAD=500mA
ILOAD=400mA
ILOAD=300mA
ILOAD=200mA
ILOAD=100mA
1200
1000
800
600
-10
Tantalum
CL=2.2µF Tantalum
C BYP=0
-20
PSRR (dB)
Dr op O ut Voltage (mV)
1400
400
100mA
-30
-40
-50
10mA
100mA
-60
200
-70
0
-80
1
2
3
4
5
6
100 µ A
100 µ A
10
1K
Output Voltage (V)
1mA
100K
10M
Frequency (Hz)
Safe Operating Area
Power Supply Rejection Ratio
-20
100mA
600
PSRR (dB)
Output Current (mA)
-30
SOT-2X
100
C L=2.2µF Tantalum
CBYP=1000pF
1mA
-40
-50
100mA
-60
-70
10
0.1
1.0
8.0
Input-Output Voltage Differential (V)
Rev.C.03
-80
10
10mA
100µA
100µA
1K
100K
10M
Frequency (Hz)
7
AME
AME8863
600mA CMOS LDO
n Characterization Curve
Current Limit Response
I OUT (200mA/DIV)
V OUT (1V/DIV)
Overtemperature Shutdown
0
0
C LOAD =2.2µF
C IN=1.0µF
RLOAD=3.3Ω
VOUTNOM =3.3V
IOUT (200mA/DIV)
VOUT (1V/DIV)
R LOAD=6.6 Ω
TIME (0.5Sec/DIV)
TIME (2mS/DIV)
Enable (2V/DIV)
Chip Enable Transient Response
C L=2µF
R L=10Ω
0
Output (1V/DIV)
C LOAD=2.2µF
C IN=1µF
R LOAD <100mΩ
VOUT (1V/DIV)
IOUT (200mV/DIV)
Short Circuit Response
0
TIME (1mS/DIV)
TIME (2mS/DIV)
Line Transient Response
Quiescent Current vs. Temp.
38
C LOAD=2.2µF
ILOAD =1mA
VOUTDC=3.3V
VINDC=4.5V
36
34
32
30
28
26
TIME (200mS/DIV)
8
Quiescent Current (uA)
VOUT (10mV/DIV)
V IN (1V/DIV)
40
-20
0
20
40
60
80
Temperature ( o C)
Rev.C.03
AME
AME8863
600mA CMOS LDO
n Date Code Rule
Marking
Date Code
Year
A
A
A
W
W
xxx0
A
A
A
W
W
xxx1
A
A
A
W
W
xxx2
A
A
A
W
W
xxx3
A
A
A
W
W
xxx4
A
A
A
W
W
xxx5
A
A
A
W
W
xxx6
A
A
A
W
W
xxx7
A
A
A
W
W
xxx8
A
A
A
W
W
xxx9
n Tape & Reel Dimension
SOT-26
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Rev.C.03
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-26
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
9
AME
AME8863
600mA CMOS LDO
n Tape & Reel Dimension
TSOT-26
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
10
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
TSOT-26
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
Rev.C.03
AME
AME8863
600mA CMOS LDO
n Package Dimension
SOT-26
Top View
Side View
SYMBOLS
D
e
MILLIMETERS
MIN
θ1
1.20REF
E
H
A
0.0472REF
L
0.15
0.0000
0.0059
b
0.30
0.55
0.0118
0.0217
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
1.90 BSC
2.60
θ1
0.0748 BSC
3.00
0.37REF
L
A
MAX
0.00
H
Front View
MIN
A1
e
S1
MAX
INCHES
0o
0.10236 0.11811
0.0146REF
10o
0o
10o
0.95REF
0.0374REF
MILLIMETERS
INCHES
A1
S1
b
TSOT-26
Top View
Side View
SYMBOLS
MIN
MAX
MIN
MAX
A+A1
0.90
1.25
0.0354
0.0492
b
0.30
0.50
0.0118
0.0197
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
θ1
E
H
D
e
L
H
S1
1.90 BSC
e
2.40
θ1
0
o
10
0.95BSC
0.09449 0.11811
0.0138BSC
o
0o
10o
0.0374BSC
A1
A
S1
3.00
0.35BSC
L
Front View
0.07480 BSC
b
Rev.C.03
11
www.ame.com.tw
E-Mail: [email protected]
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
 AME, Inc. , November 2008
Document: 2006/2095-DS8863-C.03
Corporate Headquarter
AME, Inc.
2F, 302 Rui-Guang Road, Nei-Hu District
Taipei 114, Taiwan.
Tel: 886 2 2627-8687
Fax: 886 2 2659-2989
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