AH322 2W High Linearity InGaP HBT Amplifier Product Features Product Description The AH322 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +50 OIP3 and +33 dBm of compressed 1dB power. It is housed in a leadfree/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. • 400 – 2700 MHz • +33 dBm P1dB • +50 dBm Output IP3 • 13.4 dB Gain @ 2140 MHz • 500 mA Quiescent Current • +5 V Single Supply • MTTF > 100 Years The AH322 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH322 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 MHz frequency band. • Lead-free/RoHS-compliant SOIC-8 Package Applications • • • • Functional Diagram 1 8 2 7 3 6 4 5 Function Iref Input Output / Vcc Vbias GND GND Pin No. 8 3 6, 7 1 Backside Paddle 2, 4, 5 Final stage amplifiers for Repeaters High Power Amplifiers Mobile Infrastructure LTE / WCDMA / EDGE / CDMA Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) WCDMA Channel Power (3) @ -50 dBc ACLR Noise Figure Vcc, Vbias Quiescent Collector Current (4) Iref Typical Performance Units Min MHz MHz dB dB dB dBm dBm Typ 400 Max Parameter 2700 Frequency Gain Input Return Loss Output Return Loss WCDMA Channel Power (3) 2140 13.4 14.7 7.8 +33 +50 dBm +24.1 dB V mA mA 4.8 +5 500 30 Typical Units @ -50 dBc ACLR Output P1dB Output IP3 (2) Noise Figure Vcc, Vbias Iref Quiescent Collector Current MHz dB dB dB dBm dBm dBm dB V mA mA 940 19.4 18 8.5 1960 14.1 11.3 11.8 2140 13.4 14.7 7.8 +23.6 +24.4 +24.1 +33.0 +47.6 8.5 +33.3 +50.2 4.5 +5 30 500 +33 +50 4.8 600 500 1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940 MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz, 1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. 3. 3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, no clipping, PAR = 10.2 dB @ 0.01% Probability. 4. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6 and 7. Absolute Maximum Rating Parameter Rating Storage Temperature RF Input Power, CW, 50 Ω, T = 25ºC Device Voltage, Vcc, Vbias Device Current Device Power Thermal Resistance, Rth Junction Temperature, Tj -65 to +150 °C Input P10 dB +8 V 1400 mA 8W 18.6 °C / W +200 °C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description AH322-S8G 2W High Linearity InGaP HBT Amplifier AH322-S8PCB900 AH322-S8PCB1960 AH322-S8PCB2140 920 - 960 MHz Evaluation Board 1930 - 1990 MHz Evaluation Board 2110 - 2170 MHz Evaluation Board (lead-free/RoHS-compliant SOIC-8 Pkg) Standard T/R size = 1000 pieces on a 7” reel. . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, calibrated to device leads) S22 1.0 0. 8 0 5. 2. 0 0 0 4. 5. 0 10 .0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0 0.2 10 .0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 2.14 GHz 7.19 dB 10 0.2 0. 2 2.14 GHz 22.7 dB 3. 2.14 GHz r 0.0838672 x 0.36526 0 0. 2 20 15 4. 2.14 GHz r 0.493722 x 0.825153 -10.0 4 25 6 0 3. 30 Swp Max 4GHz 0. 2. 0 0. DB(|S(2,1)|) De_emebedded S_parameter 4 DB(MSG()) De_emebedded S_parameter 0. 40 35 0. 6 Swp Max 4GHz 0.4 0. 8 1.0 S11 Gain and Maximum Stable Gain 45 -1 0.0 .4 Swp Min 0.01GHz -0 .8 -0 .6 . -2 0 -0 Swp Min 0.01GHz -1.0 4 .0 -2 3 -0 .8 2.5 -1.0 1.5 2 Frequency (GHz) .6 1 -0 0.5 -3 .0 . -0 0 -3 -4 .0 -5 . 0 -5 .2 -0 .0 2 -0 . -4 .0 -5 .0 5 0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the blue line [DB (GMAX)]. The impedance plots are shown from 0.01 – 4 GHz, with markers placed in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) 50 -0.74 -174.58 29.75 109.51 -43.47 25.51 100 -0.53 -179.31 24.21 98.59 -43.22 17.83 200 -0.45 176.71 18.46 89.55 -42.49 8.135 400 -0.44 170.07 12.77 80.82 -42.04 5.31 600 -0.56 163.11 9.78 73.71 -41.41 10.52 700 -0.61 159.9 8.73 69.49 -41.21 11.31 800 -0.64 156.03 7.94 65.68 -40.26 12.5 1000 -0.78 147.66 6.8 56.95 -39.65 7.88 1200 -0.87 138.49 6.11 46.99 -38.34 2.45 1400 -1.08 128.32 5.8 36.79 -37.99 -3.1 1600 -1.4 117.39 5.83 25.05 -37.52 -14.57 1800 -1.94 106.19 6.17 10.83 -37.39 -27.07 2000 -3.2 95.9 6.8 -7.89 -37.45 -42.22 2200 -5.84 94.01 7.36 -33.75 -38.56 -69.38 2400 -6.52 112.96 6.5 -64.88 -41.93 -115.31 2600 -4.45 121.06 4.77 -92.83 -41.83 167.17 2800 -2.44 117.78 2.24 -121.06 -38.13 103.07 3000 -1.26 108.49 -1.12 -142.85 -34.99 62.15 S22 (dB) -1.15 -1.22 -1.19 -1.22 -1.18 -1.12 -1.17 -1.22 -1.26 -1.33 -1.49 -1.46 -1.41 -1.21 -0.9 -0.4 -0.27 -0.35 S22 (ang) -135.3 -157.31 -170.3 -178.39 176.07 173.93 171.69 166.82 162.15 157.29 152.31 147.31 143.05 138.4 133.24 126.56 119.41 112.36 Application Circuit PC Board Layout Circuit Board Material: Top RF layer is .014” Getek, єr = 4.0, 4 total layers (0.062” thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8, C5 and C2. The markers and vias are spaced in .050” increments. . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier 824 - 894 MHz Application Circuit Typical RF Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Channel Power (1) (@-55 dBc IS-95 CDMA ACPR) Channel Power (2) (@ -50 dBc WCDMA ACLR) Output IP3 (3) (21 dBm / tone, 1MHz spacing) units dB dB dB dBm 824 19.7 16 7 +33.0 848 19.7 16 8 +33 894 19.7 13 12 +32.6 dBm +24.4 +24.4 +23.8 dBm +23.7 +23.7 +23 dBm +46.2 +46.3 +45.1 Quiescent Current, Icq Vpd (4) Vcc mA V V 600 +5 +5 Notes: C5 C8 L2 1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±750 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB @ 0.01% Prob. 2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @ 0.01% Probability. 3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge of L2 is placed at 265 mils from edge of AH322 RFout pin (12 º @ 850 MHz). 6. The edge of C2 is placed at 250 mils from edge of AH322 RFout pin (11 º @ 850 MHz). 7. The edge of C8 is placed at 25 mils from edge of AH322 RFout pin (1 º @ 850 MHz). 8. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 9. Zero ohm jumpers may be replaced with copper traces in the target application layout. 10. DNP implies Do Not Place. ACLR vs. Output Power 3GPP WCDMA, TM1+64DPCH, ±5MHz offset Freq., PAR = 10.34 % @ Prob. 0 19 -5 18 -10 17 -15 16 Gain 15 800 820 S11 840 860 Frequency (MHz) 824 MHz 894 MHz -45 -50 -55 -25 900 -60 20 21 22 23 24 Output Power (dBm) 25 26 OIP3 vs. Output Power ACPR vs. Output Power 1MHz spacing, 25C IS-95 CDMA, 9 CH. Fwd., ±750 KHz offset frequency, PAR = 9.7 dB @ 0.01 % Prob. 50 -40 -45 824 MHz 848 MHz 894 MHz 47 -50 OIP3 (dBm ) ACPR (dBc) 848 MHz -40 -20 S22 880 -35 ACLR (dBc) 20 -30 Re tu rn L o ss (d B ) G ain (d B) Small Signal Performance -55 -60 44 41 824 MHz 848 MHz 894 MHz 38 -65 35 -70 20 21 22 23 24 Output Power (dBm) 25 26 18 19 20 21 22 23 24 Output Power / tone (dBm) 25 26 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier 920 - 960 MHz Application Circuit (AH322-S8PCB900) Typical RF Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Channel Power (1) (@-55 dBc IS-95 CDMA ACPR) Channel Power (2) (@ -50 dBc WCDMA ACLR) Output IP3 (3) (21 dBm / tone, 1MHz spacing) Noise Figure Quiescent Current, Icq Vpd (4) Vcc units dB dB dB dBm 920 19.2 16.6 7.8 +33 940 19.4 18 8.5 +33 960 19.2 15.3 9.4 +33 dBm +24.3 +24.4 +24.3 dBm +23.5 +23.6 +23.5 dBm +47.3 +47.6 +47.2 dB mA V V 8.2 8.5 600 +5 +5 9 Notes: C5 C8 L2 Small Signal Performance ACLR vs. Channel Power ACLR vs. Channel Power 25 C 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 940 MHz 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C 0 -30 19 -5 -35 18 -10 S11 S22 16 -20 -55 -25 960 -60 940 Frequency (MHz) 950 -50 -50 -55 -60 17 18 19 20 21 22 23 24 25 Output Channel Power (dBm) 26 27 ACPR vs. Channel Power IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 25C -40 +25C -40C +85C -45 17 18 19 20 21 22 23 24 25 Output Channel Power (dBm) 26 27 Gain vs. Pout vs. Temp Freq. = 940 MHz 21 920 MHz 940 MHz 960 MHz 20 -50 ACPR (dBc) ACPR (dBc) -45 ACPR vs. Channel Power -50 960 MHz -55 19 G a in (d B ) -45 940 MHz -40 IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 940 MHz -40 920 MHz -35 +85C -45 -15 930 -40C -40 17 15 920 +25C ACLR (dBc) S21 -30 ACLR (dB m ) 20 R etu rn L o ss (dB ) G ain (d B ) 1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±885 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB @ 0.01% Prob. 2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @ 0.01% Probability. 3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge of L2 is placed at 380 mils from the edge of AH322 RFout pin (19 º @ 940 MHz) 6. The edge of C2 is placed at 190 mils from the edge of AH322 RFout pin (9.5 º @ 940 MHz). 7. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 8. 0 Ω jumpers may be replaced with copper traces in the target application layout. 9. DNP implies Do Not Place. -55 -60 18 -60 -65 -65 -70 17 25C -70 -75 -75 -80 +85C 15 -80 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) -40C 16 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) 27 28 29 30 31 Pout (dBm) 32 33 34 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier Performance Plots for AH322-S8PCB900 contd. OIP3 vs. Channel Power OIP3 vs. Channel Power 50 50 45 -40C 25C 85C 40 10 8 N F (d B) 55 25C Noise Figure vs. Frequency 1 MHz spacing, 25 C 55 OIP3 (dB m ) OIP3 (dbm ) Freq. = 940, 941 MHz, 1MHz spacing 45 920 MHz 940 MHz 960 MHz 6 4 40 2 35 35 16 17 18 19 20 21 Output Power / Tone (dBm) 22 23 16 17 18 19 20 21 22 Output Power / Tone (dBm) 23 0 920 930 940 Frequency (MHz) 950 960 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier 1930 - 1990 MHz Application Circuit (AH322-S8PCB1960) Typical RF Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Channel Power (1) (@ -50 dBc WCDMA ACLR) Output IP3 (2) (24 dBm / tone, 1MHz spacing) Noise Figure units dB dB dB dBm 1930 13.8 11.8 9 +33.2 1960 14.1 11.3 11.8 +33.3 1990 14.2 10.8 15.4 +33.1 dBm +23.9 +24.4 +23.7 dBm +47.2 +50.2 +46.7 dB mA V V Quiescent Current, Icq Vpd (4) Vcc 4.5 500 +5 +5 Notes: C8 C5 1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @ 0.01% Probability. 2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing. 3. The multilayer inductor L3 (82nH) is critical for linearity performance. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge of C5 is placed at 247 mils from the edge of AH322 RFout pin (11 º @ 1960 MHz). 6. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 7. 0 Ω jumpers may be replaced with copper traces in the target application layout. 8. DNP implies Do Not Place. Small Signal Performance 14 -5 13 -10 12 -15 S21 S11 S22 11 -35 1940 1950 1960 1970 Frequency (MHz) 1980 -35 1930 MHz -40 -20 10 1930 ACLR vs. Output Power 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C +25C -40C -45 -50 -55 -60 -25 1990 1990 MHz -45 -50 -55 -60 -65 -65 20 21 22 23 24 25 26 Output Channel Power (dBm) Gain vs. Pout vs. Temp OIP3 vs. Output Power Frequency = 1960 MHz 1 MHz spacing, 1960 MHz 16 1960 MHz -40 +85C ACLR (dBc) 0 ACLR vs. Channel Power 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 1960 MHz A C LR (dB c) 15 R e tu rn L o s s (d B ) G a in (d B ) 25 C 27 20 21 22 23 24 25 26 Output Channel Power (dBm) 27 OIP3 vs Channel Power 1 MHz spacing, 25C 55 55 50 50 13 12 +25C -40C O IP 3 (dBm ) 14 OIP3 (dBm ) G ain (dB) 15 45 +25C -40C +85C 40 +85C 45 1930 MHz 40 1960 MHz 1990 MHz 11 35 10 27 28 29 30 31 Pout (dBm) 32 33 34 35 20 21 22 23 24 25 26 Output Power / Tone (dBm) 27 20 21 22 23 24 25 Output Power / Tone (dBm) 26 27 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier 2110 - 2170 MHz Application Circuit (AH322-S8PCB2140) Typical RF Performance at 25 °C Frequency (MHz) Gain Input Return Loss Output Return Loss Output P1dB Channel Power (1) (@ -50 dBc WCDMA ACLR) Output IP3 (2) (24 dBm / tone, 1MHz spacing) Noise Figure Quiescent Current, Icq Vpd (4) Vcc units dB dB dB dBm 2110 13.1 15 6.3 2140 13.4 14.7 7.8 +33 2170 13.6 14.2 10 dBm +24.1 +24.1 +23.8 dBm +50.1 +50 +48.4 dB mA V V 4.7 4.8 500 +5 +5 4.7 Notes: C8 C5 1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @ 0.01% Probability. 2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing. 3. The multilayer inductor L3 (82 nH) is critical for linearity performance.. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge of C5 is placed at 195 mils from the edge of AH322 RFout pin (22 º @ 2140 MHz). 6. The edge of C8 is placed at 0.5 mils from the edge of AH322 RFout pin (0 º @ 2140 MHz). 7. Zero ohm jumpers may be replaced with copper traces in the target application layout. 8. DNP means Do Not Place. Small Signal Performance 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 2140 MHz 13 -5 -40 12 -10 11 -15 10 9 2110 2120 S11 S22 2130 2140 2150 Frequency (MHz) -20 2160 -40C 2140 MHz 2170 MHz +85C -45 -50 -55 -45 -50 -55 -60 -65 -65 20 21 22 23 24 25 26 Output Channel Power (dBm) Gain vs. Pout vs. Temp OIP3 vs. Output Power Frequency = 2140 MHz 1 MHz spacing, 25C 15 2110 MHz -40 +25C -60 -25 2170 3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C -35 ACLR (dBc) -35 R e tu rn L o s s (d B ) AC LR (dB c) 0 S 2 1 (d B ) 14 S21 ACLR vs. Channel Power ACLR vs. Channel Power 25C 20 27 21 22 23 24 25 26 Output Channel Power (dBm) 27 OIP3 vs Channel Power 1 MHz spacing, 25C 55 55 50 50 12 11 +25C -40C OIP3 (dBm ) 13 OIP3 (dBm) G ain (dB ) 14 45 45 2110 MHz 2140 MHz 2170 MHz +25C -40C +85C 40 40 +85C 10 35 35 9 27 28 29 30 31 Pout (dBm) 32 33 34 19 20 21 22 23 24 25 Output Power / Tone (dBm) 26 27 19 20 21 22 23 24 25 Output Power / Tone (dBm) 26 27 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “AH322G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1A Passes ≥ 250V to < 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class III Passes ≥ 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Configuration / Land Pattern Functional Diagram Mounting Config. Notes 1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contact the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees. 1 8 2 7 3 6 4 5 Function Iref Input Output / Vcc Vbias GND GND Pin No. 8 3 6, 7 1 Backside Paddle 2, 4, 5 . TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com April 2009