TriQuint AH322-S8PCB900 2w high linearity ingap hbt amplifier Datasheet

AH322
2W High Linearity InGaP HBT Amplifier
Product Features
Product Description
The AH322 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowbandtuned application circuits with up to +50 OIP3 and +33
dBm of compressed 1dB power. It is housed in a leadfree/RoHS-compliant SOIC-8 package. All devices are 100%
RF and DC tested.
• 400 – 2700 MHz
• +33 dBm P1dB
• +50 dBm Output IP3
• 13.4 dB Gain @ 2140 MHz
• 500 mA Quiescent Current
• +5 V Single Supply
• MTTF > 100 Years
The AH322 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH322 is ideal for the final stage of
small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a wide
variety of other applications within the 400 to 2700 MHz
frequency band.
• Lead-free/RoHS-compliant
SOIC-8 Package
Applications
•
•
•
•
Functional Diagram
1
8
2
7
3
6
4
5
Function
Iref
Input
Output / Vcc
Vbias
GND
GND
Pin No.
8
3
6, 7
1
Backside Paddle
2, 4, 5
Final stage amplifiers for Repeaters
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3 (2)
WCDMA Channel Power (3)
@ -50 dBc ACLR
Noise Figure
Vcc, Vbias
Quiescent Collector Current (4)
Iref
Typical Performance
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
Typ
400
Max
Parameter
2700
Frequency
Gain
Input Return Loss
Output Return Loss
WCDMA Channel Power (3)
2140
13.4
14.7
7.8
+33
+50
dBm
+24.1
dB
V
mA
mA
4.8
+5
500
30
Typical
Units
@ -50 dBc ACLR
Output P1dB
Output IP3 (2)
Noise Figure
Vcc, Vbias
Iref
Quiescent Collector Current
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
940
19.4
18
8.5
1960
14.1
11.3
11.8
2140
13.4
14.7
7.8
+23.6
+24.4
+24.1
+33.0
+47.6
8.5
+33.3
+50.2
4.5
+5
30
500
+33
+50
4.8
600
500
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940
MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz,
1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to
calculate the OIP3 using a 2:1 rule.
3. 3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, no clipping, PAR = 10.2 dB @ 0.01%
Probability.
4. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6 and 7.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
RF Input Power, CW, 50 Ω, T = 25ºC
Device Voltage, Vcc, Vbias
Device Current
Device Power
Thermal Resistance, Rth
Junction Temperature, Tj
-65 to +150 °C
Input P10 dB
+8 V
1400 mA
8W
18.6 °C / W
+200 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AH322-S8G
2W High Linearity InGaP HBT Amplifier
AH322-S8PCB900
AH322-S8PCB1960
AH322-S8PCB2140
920 - 960 MHz Evaluation Board
1930 - 1990 MHz Evaluation Board
2110 - 2170 MHz Evaluation Board
(lead-free/RoHS-compliant SOIC-8 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, calibrated to device leads)
S22
1.0
0. 8
0
5.
2.
0
0
0
4.
5. 0
10 .0
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0
0.2
10 .0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
2.14 GHz
7.19 dB
10
0.2
0.
2
2.14 GHz
22.7 dB
3.
2.14 GHz
r 0.0838672
x 0.36526
0
0. 2
20
15
4.
2.14 GHz
r 0.493722
x 0.825153
-10.0
4
25
6
0
3.
30
Swp Max
4GHz
0.
2.
0
0.
DB(|S(2,1)|)
De_emebedded S_parameter
4
DB(MSG())
De_emebedded S_parameter
0.
40
35
0.
6
Swp Max
4GHz
0.4
0. 8
1.0
S11
Gain and Maximum Stable Gain
45
-1 0.0
.4
Swp Min
0.01GHz
-0 .8
-0
.6
.
-2
0
-0
Swp Min
0.01GHz
-1.0
4
.0
-2
3
-0 .8
2.5
-1.0
1.5
2
Frequency (GHz)
.6
1
-0
0.5
-3
.0
.
-0
0
-3
-4
.0
-5 .
0
-5
.2
-0
.0
2
-0 .
-4
.0
-5
.0
5
0
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a
particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in
the blue line [DB (GMAX)].
The impedance plots are shown from 0.01 – 4 GHz, with markers placed in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
50
-0.74
-174.58
29.75
109.51
-43.47
25.51
100
-0.53
-179.31
24.21
98.59
-43.22
17.83
200
-0.45
176.71
18.46
89.55
-42.49
8.135
400
-0.44
170.07
12.77
80.82
-42.04
5.31
600
-0.56
163.11
9.78
73.71
-41.41
10.52
700
-0.61
159.9
8.73
69.49
-41.21
11.31
800
-0.64
156.03
7.94
65.68
-40.26
12.5
1000
-0.78
147.66
6.8
56.95
-39.65
7.88
1200
-0.87
138.49
6.11
46.99
-38.34
2.45
1400
-1.08
128.32
5.8
36.79
-37.99
-3.1
1600
-1.4
117.39
5.83
25.05
-37.52
-14.57
1800
-1.94
106.19
6.17
10.83
-37.39
-27.07
2000
-3.2
95.9
6.8
-7.89
-37.45
-42.22
2200
-5.84
94.01
7.36
-33.75
-38.56
-69.38
2400
-6.52
112.96
6.5
-64.88
-41.93
-115.31
2600
-4.45
121.06
4.77
-92.83
-41.83
167.17
2800
-2.44
117.78
2.24
-121.06
-38.13
103.07
3000
-1.26
108.49
-1.12
-142.85
-34.99
62.15
S22 (dB)
-1.15
-1.22
-1.19
-1.22
-1.18
-1.12
-1.17
-1.22
-1.26
-1.33
-1.49
-1.46
-1.41
-1.21
-0.9
-0.4
-0.27
-0.35
S22 (ang)
-135.3
-157.31
-170.3
-178.39
176.07
173.93
171.69
166.82
162.15
157.29
152.31
147.31
143.05
138.4
133.24
126.56
119.41
112.36
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek, єr = 4.0, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8, C5 and C2. The markers and vias are spaced in .050” increments.
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
824 - 894 MHz Application Circuit
Typical RF Performance at 25 °C
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Channel Power (1)
(@-55 dBc IS-95 CDMA ACPR)
Channel Power
(2)
(@ -50 dBc WCDMA ACLR)
Output IP3 (3)
(21 dBm / tone, 1MHz spacing)
units
dB
dB
dB
dBm
824
19.7
16
7
+33.0
848
19.7
16
8
+33
894
19.7
13
12
+32.6
dBm
+24.4
+24.4
+23.8
dBm
+23.7
+23.7
+23
dBm
+46.2
+46.3
+45.1
Quiescent Current, Icq
Vpd (4)
Vcc
mA
V
V
600
+5
+5
Notes:
C5
C8
L2
1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±750 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB
@ 0.01% Prob.
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of L2 is placed at 265 mils from edge of AH322 RFout pin (12 º @ 850 MHz).
6. The edge of C2 is placed at 250 mils from edge of AH322 RFout pin (11 º @ 850 MHz).
7. The edge of C8 is placed at 25 mils from edge of AH322 RFout pin (1 º @ 850 MHz).
8. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
9. Zero ohm jumpers may be replaced with copper traces in the target application layout.
10. DNP implies Do Not Place.
ACLR vs. Output Power
3GPP WCDMA, TM1+64DPCH, ±5MHz offset Freq., PAR = 10.34 % @ Prob.
0
19
-5
18
-10
17
-15
16
Gain
15
800
820
S11
840
860
Frequency (MHz)
824 MHz
894 MHz
-45
-50
-55
-25
900
-60
20
21
22
23
24
Output Power (dBm)
25
26
OIP3 vs. Output Power
ACPR vs. Output Power
1MHz spacing, 25C
IS-95 CDMA, 9 CH. Fwd., ±750 KHz offset frequency, PAR = 9.7 dB @ 0.01 % Prob.
50
-40
-45
824 MHz
848 MHz
894 MHz
47
-50
OIP3 (dBm )
ACPR (dBc)
848 MHz
-40
-20
S22
880
-35
ACLR (dBc)
20
-30
Re tu rn L o ss (d B )
G ain (d B)
Small Signal Performance
-55
-60
44
41
824 MHz
848 MHz
894 MHz
38
-65
35
-70
20
21
22
23
24
Output Power (dBm)
25
26
18
19
20
21
22
23
24
Output Power / tone (dBm)
25
26
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
920 - 960 MHz Application Circuit (AH322-S8PCB900)
Typical RF Performance at 25 °C
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Channel Power (1)
(@-55 dBc IS-95 CDMA ACPR)
Channel Power (2)
(@ -50 dBc WCDMA ACLR)
Output IP3
(3)
(21 dBm / tone, 1MHz spacing)
Noise Figure
Quiescent Current, Icq
Vpd (4)
Vcc
units
dB
dB
dB
dBm
920
19.2
16.6
7.8
+33
940
19.4
18
8.5
+33
960
19.2
15.3
9.4
+33
dBm
+24.3
+24.4
+24.3
dBm
+23.5
+23.6
+23.5
dBm
+47.3
+47.6
+47.2
dB
mA
V
V
8.2
8.5
600
+5
+5
9
Notes:
C5
C8
L2
Small Signal Performance
ACLR vs. Channel Power
ACLR vs. Channel Power
25 C
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 940 MHz
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C
0
-30
19
-5
-35
18
-10
S11
S22
16
-20
-55
-25
960
-60
940
Frequency (MHz)
950
-50
-50
-55
-60
17
18
19 20 21 22 23 24 25
Output Channel Power (dBm)
26
27
ACPR vs. Channel Power
IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 25C
-40
+25C
-40C
+85C
-45
17
18 19 20 21 22 23 24 25
Output Channel Power (dBm)
26 27
Gain vs. Pout vs. Temp
Freq. = 940 MHz
21
920 MHz
940 MHz
960 MHz
20
-50
ACPR (dBc)
ACPR (dBc)
-45
ACPR vs. Channel Power
-50
960 MHz
-55
19
G a in (d B )
-45
940 MHz
-40
IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 940 MHz
-40
920 MHz
-35
+85C
-45
-15
930
-40C
-40
17
15
920
+25C
ACLR (dBc)
S21
-30
ACLR (dB m )
20
R etu rn L o ss (dB )
G ain (d B )
1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±885 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB
@ 0.01% Prob.
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of L2 is placed at 380 mils from the edge of AH322 RFout pin (19 º @ 940 MHz)
6. The edge of C2 is placed at 190 mils from the edge of AH322 RFout pin (9.5 º @ 940 MHz).
7. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
8. 0 Ω jumpers may be replaced with copper traces in the target application layout.
9. DNP implies Do Not Place.
-55
-60
18
-60
-65
-65
-70
17
25C
-70
-75
-75
-80
+85C
15
-80
17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
-40C
16
17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
27
28
29
30
31
Pout (dBm)
32
33
34
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Performance Plots for AH322-S8PCB900 contd.
OIP3 vs. Channel Power
OIP3 vs. Channel Power
50
50
45
-40C
25C
85C
40
10
8
N F (d B)
55
25C
Noise Figure vs. Frequency
1 MHz spacing, 25 C
55
OIP3 (dB m )
OIP3 (dbm )
Freq. = 940, 941 MHz, 1MHz spacing
45
920 MHz
940 MHz
960 MHz
6
4
40
2
35
35
16
17
18
19
20
21
Output Power / Tone (dBm)
22
23
16
17
18
19
20
21
22
Output Power / Tone (dBm)
23
0
920
930
940
Frequency (MHz)
950
960
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
1930 - 1990 MHz Application Circuit (AH322-S8PCB1960)
Typical RF Performance at 25 °C
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Channel Power (1)
(@ -50 dBc WCDMA ACLR)
Output IP3 (2)
(24 dBm / tone, 1MHz spacing)
Noise Figure
units
dB
dB
dB
dBm
1930
13.8
11.8
9
+33.2
1960
14.1
11.3
11.8
+33.3
1990
14.2
10.8
15.4
+33.1
dBm
+23.9
+24.4
+23.7
dBm
+47.2
+50.2
+46.7
dB
mA
V
V
Quiescent Current, Icq
Vpd (4)
Vcc
4.5
500
+5
+5
Notes:
C8
C5
1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing.
3. The multilayer inductor L3 (82nH) is critical for linearity performance.
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of C5 is placed at 247 mils from the edge of AH322 RFout pin (11 º @ 1960 MHz).
6. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
7. 0 Ω jumpers may be replaced with copper traces in the target application layout.
8. DNP implies Do Not Place.
Small Signal Performance
14
-5
13
-10
12
-15
S21
S11
S22
11
-35
1940
1950
1960
1970
Frequency (MHz)
1980
-35
1930 MHz
-40
-20
10
1930
ACLR vs. Output Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C
+25C
-40C
-45
-50
-55
-60
-25
1990
1990 MHz
-45
-50
-55
-60
-65
-65
20
21
22
23
24
25
26
Output Channel Power (dBm)
Gain vs. Pout vs. Temp
OIP3 vs. Output Power
Frequency = 1960 MHz
1 MHz spacing, 1960 MHz
16
1960 MHz
-40
+85C
ACLR (dBc)
0
ACLR vs. Channel Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 1960 MHz
A C LR (dB c)
15
R e tu rn L o s s (d B )
G a in (d B )
25 C
27
20
21
22
23
24
25
26
Output Channel Power (dBm)
27
OIP3 vs Channel Power
1 MHz spacing, 25C
55
55
50
50
13
12
+25C
-40C
O IP 3 (dBm )
14
OIP3 (dBm )
G ain (dB)
15
45
+25C
-40C
+85C
40
+85C
45
1930 MHz
40
1960 MHz
1990 MHz
11
35
10
27
28
29
30
31
Pout (dBm)
32
33
34
35
20
21
22
23
24
25
26
Output Power / Tone (dBm)
27
20
21
22
23
24
25
Output Power / Tone (dBm)
26
27
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
2110 - 2170 MHz Application Circuit (AH322-S8PCB2140)
Typical RF Performance at 25 °C
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Channel Power (1)
(@ -50 dBc WCDMA ACLR)
Output IP3 (2)
(24 dBm / tone, 1MHz spacing)
Noise Figure
Quiescent Current, Icq
Vpd (4)
Vcc
units
dB
dB
dB
dBm
2110
13.1
15
6.3
2140
13.4
14.7
7.8
+33
2170
13.6
14.2
10
dBm
+24.1
+24.1
+23.8
dBm
+50.1
+50
+48.4
dB
mA
V
V
4.7
4.8
500
+5
+5
4.7
Notes:
C8
C5
1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing.
3. The multilayer inductor L3 (82 nH) is critical for linearity performance..
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of C5 is placed at 195 mils from the edge of AH322 RFout pin (22 º @ 2140 MHz).
6. The edge of C8 is placed at 0.5 mils from the edge of AH322 RFout pin (0 º @ 2140 MHz).
7. Zero ohm jumpers may be replaced with copper traces in the target application layout.
8. DNP means Do Not Place.
Small Signal Performance
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 2140 MHz
13
-5
-40
12
-10
11
-15
10
9
2110
2120
S11
S22
2130 2140 2150
Frequency (MHz)
-20
2160
-40C
2140 MHz
2170 MHz
+85C
-45
-50
-55
-45
-50
-55
-60
-65
-65
20
21
22
23
24
25
26
Output Channel Power (dBm)
Gain vs. Pout vs. Temp
OIP3 vs. Output Power
Frequency = 2140 MHz
1 MHz spacing, 25C
15
2110 MHz
-40
+25C
-60
-25
2170
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C
-35
ACLR (dBc)
-35
R e tu rn L o s s (d B )
AC LR (dB c)
0
S 2 1 (d B )
14
S21
ACLR vs. Channel Power
ACLR vs. Channel Power
25C
20
27
21
22
23
24
25
26
Output Channel Power (dBm)
27
OIP3 vs Channel Power
1 MHz spacing, 25C
55
55
50
50
12
11
+25C
-40C
OIP3 (dBm )
13
OIP3 (dBm)
G ain (dB )
14
45
45
2110 MHz
2140 MHz
2170 MHz
+25C
-40C
+85C
40
40
+85C
10
35
35
9
27
28
29
30
31
Pout (dBm)
32
33
34
19
20
21 22
23
24
25
Output Power / Tone (dBm)
26
27
19
20
21
22
23
24
25
Output Power / Tone (dBm)
26
27
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an
“AH322G” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes ≥ 250V to < 500V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class III
Passes ≥ 1000V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Configuration / Land Pattern
Functional Diagram
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill
and have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contact the
heatsink.
5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters (inches). Angles are in degrees.
1
8
2
7
3
6
4
5
Function
Iref
Input
Output / Vcc
Vbias
GND
GND
Pin No.
8
3
6, 7
1
Backside Paddle
2, 4, 5
.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
April 2009
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