Transistors SMD Type PNP High-Voltage Transistors BSR20,BSR20A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage (max. 150 V). 0.55 Low current (max. 300 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit -130 V BSR20A -160 V BSR20 -120 V -150 V BSR20 VCBO VCEO BSR20A VEBO -5 V Collector current IC -300 mA Peak collector current ICM -600 mA Emitter-base voltage IB -100 mA Total power dissipation * Ptot 250 mW Storage temperature Tstg -65 to +150 Base current Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors SMD Type BSR20,BSR20A Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current BSR20 Collector cutoff current BSR20A Emitter cutoff current ICBO ICBO IEBO DC current gain BSR20 hFE Testconditons Max Unit IE = 0; VCB = -100 V -100 nA IE = 0; VCB = -100 V; Tamb = 100 -100 ìA IE = 0; VCB = -120 V -50 nA IE = 0; VCB = -120 V; Tamb = 100 -50 ìA -50 nA IC = 0; VEB = -4 V IC = -1 mA; VCE = -5 V BSR20A DC current gain BSR20 DC current gain 180 BSR20A 60 240 BSR20 40 hFE hFE IC = -10 mA; VCE = -5 V IC = -50 mA; VCE = -5 V 50 VCEsat Collector capacitance Cc BSR20 BSR20A hFE Classification TYPE BSR20 BSR20A Marking T35 T36 www.kexin.com.cn 30 40 base-emitter saturation voltage 2 Typ 50 BSR20A Transition frequency Min fT IC = -10 mA; IB = -1 mA -200 mV IC = -50 mA; IB = -5 mA -500 mV IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -10 V; f = 100 MHz 6 pF 100 400 MHz 100 300 MHz