Kexin BSR20A Pnp high-voltage transistor Datasheet

Transistors
SMD Type
PNP High-Voltage Transistors
BSR20,BSR20A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High voltage (max. 150 V).
0.55
Low current (max. 300 mA)
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol
Rating
Unit
-130
V
BSR20A
-160
V
BSR20
-120
V
-150
V
BSR20
VCBO
VCEO
BSR20A
VEBO
-5
V
Collector current
IC
-300
mA
Peak collector current
ICM
-600
mA
Emitter-base voltage
IB
-100
mA
Total power dissipation *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Base current
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
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1
Transistors
SMD Type
BSR20,BSR20A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
BSR20
Collector cutoff current
BSR20A
Emitter cutoff current
ICBO
ICBO
IEBO
DC current gain
BSR20
hFE
Testconditons
Max
Unit
IE = 0; VCB = -100 V
-100
nA
IE = 0; VCB = -100 V; Tamb = 100
-100
ìA
IE = 0; VCB = -120 V
-50
nA
IE = 0; VCB = -120 V; Tamb = 100
-50
ìA
-50
nA
IC = 0; VEB = -4 V
IC = -1 mA; VCE = -5 V
BSR20A
DC current gain
BSR20
DC current gain
180
BSR20A
60
240
BSR20
40
hFE
hFE
IC = -10 mA; VCE = -5 V
IC = -50 mA; VCE = -5 V
50
VCEsat
Collector capacitance
Cc
BSR20
BSR20A
hFE Classification
TYPE
BSR20
BSR20A
Marking
T35
T36
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30
40
base-emitter saturation voltage
2
Typ
50
BSR20A
Transition frequency
Min
fT
IC = -10 mA; IB = -1 mA
-200
mV
IC = -50 mA; IB = -5 mA
-500
mV
IE = ie = 0; VCB = -10 V; f = 1 MHz
IC = -10 mA; VCE = -10 V; f = 100 MHz
6
pF
100
400
MHz
100
300
MHz
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