DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance 90mΩ @ VGS = 4.5V 110mΩ @ VGS = 2.5V 200mΩ @ VGS = 1.5V Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) • • • Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • SOT23 D D G S G ESD PROTECTED TO 3kV Gate Protection Diode Top View S Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMN3200U-7 SOT23 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YM NEW PRODUC • Mechanical Data 32N Date Code Key Year Code 2007 U Month Code Jan 1 ~ ~ Feb 2 DMN3200U Document number: DS31188 Rev. 7 - 2 2016 D Mar 3 Apr 4 32N = Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M = Month (ex: 9 = September) 2017 E May 5 2018 F Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 2021 I Oct O 2022 J Nov N Dec D May 2016 © Diodes Incorporated DMN3200U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±8 V ID 2.2 A IDM 9 A Symbol Value Units PD 650 mW RθJA 192 °C/W TJ, TSTG -55 to +150 °C NEW PRODUC Drain Current (Note 5) Pulsed Drain Current (Note 5) Units Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ±5 µA VGS = ±8V, VDS = 0V VGS(TH) 0.45 1.0 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VDS = VGS, ID = 250µA VGS = 4.5V, ID = 2.2A RDS(ON) 62 70 150 90 110 200 mΩ Forward Transfer Admittance |Yfs| 5 S VDS = 5V, ID = 2.2A Diode Forward Voltage (Note 6) VSD 0.9 V VGS = 0V, IS = 1A Input Capacitance Ciss 290 pF Output Capacitance Coss 66 pF Static Drain-Source On-Resistance VGS = 2.5V, ID = 2A VGS = 1.5V, ID = 0.67A DYNAMIC CHARACTERISTICS (Note 7) Crss 35 pF tD(ON) 40.2 ns Turn-On Rise Time tR 43.1 ns Turn-Off Delay Time tD(OFF) 471 ns tF 104 ns Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Fall Time Notes: VDS = 10V, VGS = 0V f = 1.0MHz VDD = 10V, ID = 2A, VGEN = 4.5V, RL = 5Ω, RGEN = 6Ω 5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN3200U Document number: DS31188 Rev. 7 - 2 2 of 6 www.diodes.com May 2016 © Diodes Incorporated DMN3200U 20 10 VVGS 4.5V GS = 4.5V VVGS = 2.0V GS = 2.0V )A ( T N E R R U C N I A R D ,D I 12 VGS = 1.5V VGS = 1.5V 8 4 8 7 6 5 4 3 2 VVGS = 1.2V GS = 1.2V 0 1 2 3 4 DRAIN -SOURCE VOLTAGE (V) DS, ,DRAIN-SOURCE VVDS VOLTAGE (V) Figure 1 Typical OutputCharacteristics Characteristics Fig. 1 Typical Output TA = 150°C 1 VVGS == 1.0V 1.0V GS 0 TA = 85°C 0 0.5 5 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VDS = 5V Pulsed 9 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) V = 2.5V VGS GS = 2.5V VGS = 4.0V V GS = 4.0V 16 TA = 25°C TA = -55°C 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3 1.8 1.6 1.4 VGS = 1.5V 0.1 VGS = 2.5V 1.2 VGS = 4.5V 1.0 0.8 0.6 0.01 0.01 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 1.0 0.8 ID = 250µA C, CAPACITANCE (pF) ) V ( E G A T L O V D L O H S E R H T E T A G ,H ) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUC VGS = 3.0V VGS = 3.0V 0.6 0.4 Ciss Coss 0.2 Crss T (S G V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMN3200U Document number: DS31188 Rev. 7 - 2 3 of 6 www.diodes.com 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 30 May 2016 © Diodes Incorporated DMN3200U 100 10 ID , DRAIN CURRENT (A) 1 )A ( T N E R 0.1 R U C E C R 0.01 U O S ,S I 0.001 IS, SOURCE CURRENT (A) TA = 150°C TA = 125°C TA = 85°C TA = 25°C 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 T J(ma x) = 150°C PW = 100µs T A = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board TA = -55°C 0.01 0.1 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD ,SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 1 10 V VDS VOLTAGE(V) (V) DS , DRAIN-SOURCE VOLTAGE Figure SOA, Safe Safe Operation Fig. 88SOA, OperationArea Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUC RDS(on) Limited D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 188°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 DMN3200U Document number: DS31188 Rev. 7 - 2 0.001 0.01 0.1 1 t1,t1,PULSE (sec) PULSEDURATION DURATION TIMES TIME (sec) Figure Transient Thermal Resistance Fig. 15 9 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 May 2016 © Diodes Incorporated DMN3200U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° NEW PRODUC H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMN3200U Document number: DS31188 Rev. 7 - 2 Dimensions Value (in mm) C 2.0 X X1 Y 0.8 1.35 0.9 Y1 2.9 X1 5 of 6 www.diodes.com May 2016 © Diodes Incorporated DMN3200U IMPORTANT NOTICE NEW PRODUC DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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