AP15P10GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -100V RDS(ON) 230mΩ ID G -15A S Description G The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. The through-hole version (AP15P10GJ) is available for lowprofile applications. G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -15 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -9.4 A 1 IDM Pulsed Drain Current -60 A PD@TC=25℃ Total Power Dissipation 96 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 1.3 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 200910084 AP15P10GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-1mA -100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A - - 230 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-9A - 8 - S IDSS Drain-Source Leakage Current VDS=-100V, VGS=0V - - -25 uA Drain-Source Leakage Current (T j=125oC) VDS=-80V, VGS=0V - - -250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-9A - 37 60 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-80V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 15 - nC VDS=-50V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-9A - 25 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=-10V - 56 - ns tf Fall Time RD=5.6Ω - 36 - ns Ciss Input Capacitance VGS=0V - 1180 1900 pF Coss Output Capacitance VDS=-25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 3.6 5 Ω Min. Typ. IS=-9A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-9A, VGS=0V, - 95 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 410 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP15P10GH/J-HF 30 30 -10V -10V TC=150oC T C =25 o C -ID , Drain Current (A) -ID , Drain Current (A) -7.0V 20 -5.0V 10 -4.5V -7.0V 20 -5.0V 10 -4.5V V G = - 3 .0V V G = - 3 .0V 0 0 0 5 10 15 20 0 25 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 15 20 25 Fig 2. Typical Output Characteristics 2.4 550 I D = -6 A V G = - 10V I D = -6 A T C =25 ℃ 1.9 Normalized RDS(ON) 450 RDS(ON) (mΩ ) 5 -V DS , Drain-to-Source Voltage (V) 350 1.4 0.9 250 0.4 150 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 10 8 T j =25 o C Normalized -VGS(th) (V) -IS(A) T j =150 o C 6 4 1.1 0.7 2 0 0.3 0 0.4 0.8 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP15P10GH/J-HF f=1.0MHz 12 10000 C iss 1000 8 I D = -9A V DS = -80V C (pF) -VGS , Gate to Source Voltage (V) 10 6 C oss 100 4 C rss 2 10 0 0 10 20 30 1 40 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthjc) 1 100us 10 -ID (A) 1ms 10ms 100ms DC 1 o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 VG V DS =-5V T j =25 o C -ID , Drain Current (A) 8 T j =150 o C QG -10V 6 QGS QGD 4 2 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4