APT5024SVR
22A 0.240Ω
500V
POWER MOS V®
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Surface Mount D3PAK Package
D3PAK
D
G
S
MAXIMUM RATINGS
Continuous Drain Current @ TC = 25°C
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
PD
T J,TSTG
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
22
Repetitive Avalanche Energy
±20
Volts
±30
280
Watts
2.24
W/°C
°C
22
1
Single Pulse Avalanche Energy
Amps
88
(Repetitive and Non-Repetitive)
EL
EAS
Volts
300
Amps
30
4
mJ
1210
PR
E AR
500
-55 to 150
Operating and Storage Junction Temperature Range
IM
V GSM
UNIT
RY
ID
APT5024SVR
Drain-Source Voltage
A
VDSS
Parameter
IN
Symbol
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (V GS = 0V, ID = 250µA)
500
Volts
22
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 I D[Cont.])
MAX
0.24
Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 V DSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
UNIT
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5529 Rev -
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT5024SVR
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
V GS = 0V
3400
Coss
Output Capacitance
VDS = 25V
470
Crss
Reverse Transfer Capacitance
f = 1 MHz
180
Qg
Total Gate Charge
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
td(off)
tf
138
19
ID = ID[Cont.] @ 25°C
65
Gate-Source Charge
Qgd
tr
VGS = 10V
V DD = 0.5 VDSS
VGS = 15V
11
V DD = 0.5 VDSS
10
ID = ID[Cont.] @ 25°C
44
R G = 1.6Ω
7
Rise Time
Turn-off Delay Time
Fall Time
RY
Q gs
3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
ISM
Characteristic / Test Conditions
MIN
TYP
A
Symbol
Continuous Source Current (Body Diode)
UNIT
pF
nC
ns
MAX
22
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
V SD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
t
Reverse Recovery Time (IS = -ID[Cont.], dlS /dt = 100A/µs)
415
ns
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
6.6
µC
IN
1.3
IM
THERMAL CHARACTERISTICS
Characteristic
PR
Symbol
88
EL
rr
Q rr
R θJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
40
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 5.00mH, R = 25Ω, Peak I = 22A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
3
Drain
(Heat Sink)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
0.46 (.018)
0.56 (.022) {3 Plcs}
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
13.41 (.528)
13.51 (.532)
11.51 (.453)
11.61 (.457)
Revised
4/18/95
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
MAX
0.45
1 Repetitive Rating: Pulse width limited by maximum junction
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
050-5529 Rev -
MAX
Source
Drain
Gate
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Volts
UNIT
°C/W