AP4503AGEM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Lower Gate Charge
RDS(ON)
D1
D1
▼ Fast Switching Performance
30V
26mΩ
ID
G2
▼ RoHS Compliant & Halogen-Free
S1
SO-8
7A
P-CH BVDSS
S2
G1
-30V
RDS(ON)
Description
52mΩ
ID
AP4503A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
-5A
D1
G1
D2
G2
S1
S2
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
Drain Current , VGS @ 10V
3
7.0
-5.0
A
Drain Current , VGS @ 10V
3
5.5
-4.0
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
TJ
2
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201501063
AP4503AGEM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=7A
-
18
26
mΩ
VGS=4.5V, ID=4A
-
24
38
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.4
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=7A
-
7
11.2
nC
Qgs
Gate-Source Charge
VDS=15V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
7
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
1280
pF
Coss
Output Capacitance
VDS=15V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2.6
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=7A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
2
AP4503AGEM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-4A
-
42
52
mΩ
VGS=-4.5V, ID=-3A
-
54
80
mΩ
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.5
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-4A
-
7
11.2
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.7
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
4.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=-10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=-15V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
12
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4503AGEM-HF
N-Channel
30
30
ID , Drain Current (A)
20
10
20
10
0
0
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
1.8
I D =7A
V G =10V
I D = 4A
o
T A = 25 C
Normalized RDS(ON)
26
RDS(ON0 (mΩ )
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =150 o C
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
T A =25 C
24
22
20
1.4
1.0
18
30
16
-30
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D =250uA
1.6
T j =25 o C
o
T j =150 C
IS(A)
Normalized VGS(th)
6
4
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4503AGEM-HF
N-Channel
ID=7A
V DS = 15 V
1000
8
800
C iss
6
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
10
600
4
400
2
200
C oss
C rss
0
0
0
3
6
9
12
1
15
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (R thja)
1
10
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.01
30
-30
Rthja=135oC/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
10
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
8
20
10
o
T j =150 C
T j =25 o C
6
4
2
o
T j =-40 C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
5
AP4503AGEM-HF
P-Channel
20
20
-ID , Drain Current (A)
16
12
8
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0V
o
T A = 150 C
16
-ID , Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0V
o
T A =25 C
4
12
8
4
0
0
0
1
2
3
4
5
6
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
70
I D = -4 A
V G = - 10V
I D = -2 A
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )
1.6
60
50
1.2
0.8
30
-30
0.4
40
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2.0
I D = -250uA
1.6
Normalized VGS(th)
-IS(A)
3
2
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4503AGEM-HF
P-Channel
f=1.0MHz
10
1200
I D = -4A
V DS = -15V
1000
800
C (pF)
-VGS , Gate to Source Voltage (V)
8
6
C iss
600
4
400
2
200
0
0
0
4
8
12
1
16
5
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thja)
1
10
-ID (A)
9
C oss
C rss
Operation in this area
limited by RDS(ON)
100us
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.01
30
-30
Rthja=135oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
6
V DS = -5V
5
-ID , Drain Current (A)
-ID , Drain Current (A)
16
12
8
4
3
2
o
T j =150 C
4
o
T j =25 C
1
o
T j = -40 C
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
7
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
7
AP4503AGEM-HF
MARKING INFORMATION
Part Number
4503AGEM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
8