BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Q101 compliant Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Advanced braking systems (ABS) Motors, lamps and solenoids Automotive systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 4 - - 61.8 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 106 W VGS = 10 V; ID = 20 A; Tj = 25 °C - 8.1 11 mΩ VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12; see Figure 13 - 9.1 12 mΩ V Static characteristics RDSon drain-source on-state resistance BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit - - 129 mJ - 13 - nC Avalanche ruggedness EDS(AL)S non-repetitive ID = 61.8 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 20 A; VDS = 44 V; Tj = 25 °C; see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number BUK9Y12-55B BUK9Y12-55B Product data sheet Package Name Description LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 Version © NXP B.V. 2010. All rights reserved. 2 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V VDGR drain-gate voltage RGS = 20 kΩ - - 55 V VGS gate-source voltage ID drain current -15 - 15 V Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 4 - - 61.8 A Tmb = 100 °C; VGS = 5 V; see Figure 1 - - 43.8 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 4 - - 247 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 106 W Tstg storage temperature -55 - 175 °C Tj junction temperature -55 - 175 °C Source-drain diode IS source current Tmb = 25 °C - - 61.8 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - - 247 A - - 129 mJ - - - J Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 61.8 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. BUK9Y12-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 [1][2][3] © NXP B.V. 2010. All rights reserved. 3 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 003aac507 100 03na19 120 ID (A) Pder (%) 75 80 50 40 25 0 0 0 Fig 1. 50 100 0 150 200 Tmb (°C) 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac486 102 IAL (A) (1) 10 (2) 1 (3) 10-1 10-3 Fig 3. 10-2 10-1 1 tAL (ms) 10 Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK9Y12-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 003aad475 103 I D (A) Limit RDSon = V DS / ID 102 tp = 10 μs 100 μs 10 1 ms DC 10 ms 1 100 ms 10-1 1 Fig 4. 102 10 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - - 1.42 K/W 003aac479 10 Zth (j-mb) (K/W) δ = 0.5 1 0.2 0.1 10-1 0.05 δ= P 0.02 tp T 10-2 single shot t tp T 10-3 10-6 Fig 5. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y12-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10; see Figure 11 - - 2.45 V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10; see Figure 11 1.25 1.65 2.15 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10; see Figure 11 0.5 - - V - - 500 µA IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 175 °C VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VDS = 0 V; VGS = 15 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -15 V; Tj = 25 °C - 2 100 nA VGS = 4.5 V; ID = 20 A; Tj = 25 °C - - 13 mΩ VGS = 10 V; ID = 20 A; Tj = 25 °C - 8.1 11 mΩ VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12; see Figure 13 - 9.1 12 mΩ VGS = 5 V; ID = 20 A; Tj = 175 °C; see Figure 13 - - 27.6 mΩ ID = 20 A; VDS = 44 V; VGS = 5 V; Tj = 25 °C; see Figure 14 - 32 - nC - 6 - nC - 13 - nC - 2160 2880 pF - 315 378 pF - 175 240 pF - 29 - ns - 78 - ns RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 100 - ns tf fall time - 63 - ns - 0.85 1.2 V VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 VDS = 30 V; RL = 1.5 Ω; VGS = 5 V; RG(ext) = 10 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; see Figure 16 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C BUK9Y12-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 - 44 - ns - 83 - nC © NXP B.V. 2010. All rights reserved. 6 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 003aac879 160 15 ID (A) 003aac881 60 4.5 10 4 5 ID (A) 120 3.5 80 3 40 2.5 40 20 Tj = 175 °C VGS (V) = 2 Tj = 25 °C 0 0 0 Fig 6. 2 4 6 8 VDS (V) 0 10 Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. 003aac885 200 1 2 VGS (V) Transfer characteristics: drain current as a function of gate-source voltage; typical values. 003aac880 40 3.5 RDSon (mΩ) gfs (S) 3 4 4.5 VGS (V) = 3 175 30 150 20 5 10 125 10 100 0 0 Fig 8. 20 40 60 ID (A) 80 Forward transconductance as a function of drain current; typical values. BUK9Y12-55B Product data sheet 0 Fig 9. 50 100 150 ID (A) 200 Drain-source on-state resistance as a function of drain current; typical values. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 003aad557 2.5 VGS(th) (V) 003aad565 10-1 ID (A) max 10-2 2 typ min 10-3 1.5 typ max min 1 10-4 0.5 10-5 0 -60 10-6 0 60 120 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 003aac886 14 0 180 1 2 3 VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aad696 2.4 a RDSon (mΩ) 2 12 1.6 10 1.2 0.8 8 0.4 6 0 4 8 12 16 VGS (V) Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values. BUK9Y12-55B Product data sheet 0 -60 0 60 120 Tj (°C) 180 Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 003aac882 5 003aac884 104 VGS (V) C (pF) 4 VDS = 14V Ciss 3 VDS = 44V 103 2 Coss 1 Crss 2 0 10 0 10 20 30 QG (nC) 40 Fig 14. Gate-source voltage as a function of gate charge; typical values. 10-1 1 10 VDS (V) 102 Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 003aac883 60 IS (A) 40 20 Tj = 175 °C Tj = 25 °C 0 0 0.2 0.4 0.6 0.8 VSD (V) 1 Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. BUK9Y12-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16 MO-235 Fig 17. Package outline SOT669 (LFPAK) BUK9Y12-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9Y12-55B_4 20100407 Product data sheet - BUK9Y12-55B_3 Modifications: BUK9Y12-55B_3 BUK9Y12-55B Product data sheet • Status changed from objective to product. 20100216 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B_2 © NXP B.V. 2010. All rights reserved. 11 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BUK9Y12-55B Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK9Y12-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 April 2010 Document identifier: BUK9Y12-55B