DISCRETE SEMICONDUCTORS DATA SHEET BFR505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR505 PINNING • High power gain PIN • Low noise figure DESCRIPTION Code: N30 • High transition frequency 1 base • Gold metallization ensures excellent reliability. 2 emitter 3 collector 3 fpage DESCRIPTION 1 The BFR505 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). 2 Top view MSB003 Fig.1 SOT23. The transistor is encapsulated in a plastic SOT23 envelope. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCES collector-emitter voltage RBE = 0 − − 15 V IC DC collector current − − 18 mA mW Ptot total power dissipation up to Ts = 135 °C; note 1 − − 150 hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 Cre feedback capacitance IC = ic = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz − 9 − GHz GUM maximum unilateral power gain IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 17 − dB IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 10 − dB S212 insertion power gain IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz 13 14 − dB F noise figure Γs = Γopt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.2 1.7 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.6 2.1 dB Γs = Γopt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 1.9 − dB Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage − 2.5 V IC DC collector current continuous − 18 mA Ptot total power dissipation up to Ts = 135 °C; note 1 − 150 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER from junction to soldering point (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 3 THERMAL RESISTANCE 260 K/W Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − ICBO collector cut-off current IE = 0; VCB = 6 V 50 nA hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 0.4 − pF Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz − 0.4 − pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz − 9 − GHz GUM maximum unilateral power gain (note 1) IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 17 − dB IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 10 − dB S212 insertion power gain IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz 13 14 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.2 1.7 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 1.9 − dB PL1 output power at 1 dB gain compression IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; f = 900 MHz − 4 − dBm ITO third order intercept point note 2 − 10 − dBm Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz. September 1995 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 MRA718 - 1 MRA719 250 200 handbook, halfpage handbook, halfpage P tot (mW) hFE 200 150 150 100 100 50 50 0 0 50 100 150 0 10−3 200 Ts ( o C) 10−2 10−1 1 10 102 IC (mA) VCE = 6 V. Fig.3 Fig.2 Power derating curve. MRA720 0.4 DC current gain as a function of collector current. MRA721 12 handbook, halfpage Cre (pF) VCE = 6V fT (GHz) 0.3 8 VCE = 3V 0.2 4 0.1 0 0 2 4 6 8 10 VCB (V) 10−1 Ic = 0; f = 1 MHz. Tamb = 25 °C; f = 1 GHz. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage. September 1995 5 1 10 IC (mA) Transition frequency as a function of collector current. 102 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 MRA764 25 MRA765 25 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 20 MSG GUM 15 15 10 10 5 5 0 Gmax MSG GUM 0 0 4 8 12 0 4 8 IC (mA) 12 IC (mA) VCE = 6 V; f = 2 GHz. VCE = 6 V; f = 900 MHz. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. MRA767 MRA766 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) GUM GUM 40 40 30 30 MSG MSG 20 20 10 10 Gmax 0 10 102 103 f (MHz) 0 10 104 10 2 103 f (MHz) 10 VCE = 6 V; Ic = 5 mA. VCE = 6 V; Ic = 1.25 mA. Fig.8 Gain as a function of frequency. September 1995 Gmax Fig.9 Gain as a function of frequency. 6 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor MRA726 5 handbook, halfpage Fmin (dB) 4 BFR505 20 Gass 5 mA Fmin (dB) IC = 1.25 mA 4 (dB) 15 f = 900 MHz MRA727 5 handbook, halfpage 20 Gass (dB) 15 Gass 1000 MHz 3 2000 MHz Gass 2 1 2000 MHz 10 3 10 5 2 5 0 1 Fmin 1000 MHz 900 MHz 500 MHz 5 mA Fmin 0 1.25 mA 0 10−1 1 −5 10 IC (mA) 0 102 VCE = 6 V. 103 VCE = 6 V. Fig.10 Minimum noise figure and associated available gain as functions of collector current. Fig.11 Minimum noise figure and associated available gain as functions of frequency. 90° pot. unst. region handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 stability circle 180° 0.2 0.2 0 0.4 5 Fmin = 1. 2 dB 0.5 ΓOPT F = 1.5 dB 5 1 0.2 0° 0 F = 2 dB F = 3 dB 0.2 −135° 0.5 5 2 −45° 1 MRA728 Zo = 50 Ω. VCE = 6 V; IC = 5 mA; f = 900 MHz. −90° Fig.12 Noise circle figure. September 1995 f (MHz) −5 104 7 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 handbook, full pagewidth 90° pot. unst. region 1.0 1 135° 0.8 45° 2 0.5 0.6 ΓOPT Fmin = 1. 9 dB 0.2 stability circle 180° 0.4 5 0.2 0.2 0 0.5 F = 2.5 dB 1 2 5 0° 0 F = 3 dB F = 4 dB 0.2 −135° 0.5 5 2 −45° 1 MRA729 Zo = 50 Ω. VCE = 6 V; IC = 5 mA; f = 2000 MHz. −90° Fig.13 Noise circle figure. September 1995 8 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 90° 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 3 GHz 0° 0 40 MHz 5 0.2 0.5 −135° 2 −45° 1 MRA722 −90° VCE = 6 V; IC = 5 mA. Zo = 50 Ω. Fig.14 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 135° 45° 40 MHz 180° 15 12 3 GHz 9 6 0° 3 −135° −45° −90° MRA723 VCE = 6 V; IC = 5 mA. Fig.15 Common emitter forward transmission coefficient (S21). September 1995 9 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.5 0.4 0.3 0.2 0° 0.1 −135° −45° −90° MRA724 VCE = 6 V; IC = 5 mA. Fig.16 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 40 MHz 0.2 −135° 5 3 GHz 0.5 0 2 −45° 1 MRA725 −90° VCE = 6 V; IC = 5 mA. Zo = 50 Ω. Fig.17 Common emitter output reflection coefficient (S22). September 1995 10 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 September 1995 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 12