BB 555 Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio 2 • Low series inductance • Low series resistance • Extremely small plastic SMD package 1 • Excellent uniformity and matching due to VES05991 "in-line" matching assembly procedure Type Marking Ordering Code Pin Configuration Package BB 555 B Q62702-B0864 unmatched BB 555 B Q62702-B0853 inline matched 1=C 2=A SCD-80 Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage (R ≥ 5kΩ) VRM 35 Forward current IF 20 mA Operating temperature range T op 55 ...+150 °C Storage temperature T stg 55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit V Jul-28-1998 1998-11-01 BB 555 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 200 DC characteristics Reverse current nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 17.5 18.7 20 VR = 2 V, f = 1 MHz 14.1 15 16.1 VR = 25 V, f = 1 MHz 2.05 2.24 2.4 VR = 28 V, f = 1 MHz 1.9 2.1 2.3 CT2/C T25 6 6.7 7.5 CT1/C T28 8.2 8.9 9.8 VR = 1V to 28V , f = 1 MHz, 4 diodes sequence - 0.15 1 VR = 1V to 28V , f = 1 MHz, 7 diodes sequence - 0.25 2 rs - 0.58 - Ω Ls - 0.6 - nH Capacitance ratio - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz ∆CT/C T Capacitance matching 1) Series resistance VR = 3 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-28-1998 1998-11-01 BB 555 Temperature coefficient of the diode Diode capacitance CT = f (V R) f = 1MHz capacitance TCc = f (VR) 10 -3 20 pF 16 1/°C CT T Cc 14 12 10 -4 10 8 6 4 2 0 0 5 10 15 V 20 10 -5 0 10 30 10 1 V VR 10 2 VR Reverse current I R = f (VR) T A = Parameter Reverse current IR = f (TA) VR = 28V 10 3 10 3 85°C pA pA IR 10 2 IR 10 2 25°C 10 1 10 1 10 0 10 -1 0 10 10 1 V 10 10 0 -30 2 VR Semiconductor Group Semiconductor Group -10 10 30 50 70 °C 100 TA 33 Jul-28-1998 1998-11-01 BB 555 Normalized diode capacitance C(TA) / C(25°C)= f (T A) f = 1MHz, VR = Parameter 1.06 CTA / C25 1V 2V 1.02 25V 1.00 0.98 0.96 -30 -10 10 30 50 70 °C 110 TA Semiconductor Group Semiconductor Group 44 Jul-28-1998 1998-11-01