Infineon BAS125-07 Silicon schottky diode Datasheet

BAS125-07W
Silicon Schottky Diode
3
For low-loss, fast-recovery, meter protection,
4
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
2
1
VPS05605
4
1
3
2
EHA07008
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BAS125-07W
17s
Pin Configuration
1 = C1
2 = C2
3 = A2
Package
4 = A1
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
25
V
Forward current
IF
100
mA
Surge forward current (t 100s)
IFSM
500
Total power dissipation, TS = 96 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ... 150
Maximum Ratings
Junction - soldering point1)
RthJS
215
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Aug-16-2001
BAS125-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Reverse current
nA
IR
VR = 20 V
-
-
100
VR = 25 V
-
-
150
Forward voltage
mV
VF
IF = 1 mA
-
385
400
IF = 10 mA
-
530
650
IF = 35 mA
-
800
950
CT
-
-
1.1
pF
Rf
-
16
-
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 5 mA, f = 10 kHz
2
Aug-16-2001
BAS125-07W
Forward current IF = f (VF )
Total power dissipation Ptot = f(TS)
TA = Parameter
10 2
ΙF
BAS 125...
EHD07115
100
mA
mA
80
70
TA = -40C
25 C
85 C
150 C
10 0
IF
10
1
60
50
40
30
10 -1
20
10
10 -2
0.0
0.5
V
0
0
1.0
15
30
45
60
75
Reverse current IR = f (VR )
Differential forward resistance rf = f (IF)
f = 10 kHz
TA = Parameter
ΙR
BAS 125...
EHD07116
10 4
rf
TA = 125 C
µA
150
TS
VF
10 1
90 105 120 °C
10 0
BAS 125...
EHD07118
Ω
10 3
TA = 85 C
10 -1
10 2
10 -2
10 -3
10 1
TA = 25 C
0
10
V
10 0
10 -2
20
10 -1
10 0
10 1 mA
10 2
ΙF
VR
3
Aug-16-2001
BAS125-07W
Diode capacitance CT = f (VR)
f = 1MHz
1.0
CT
BAS 125...
EHD07117
pF
0.8
0.6
0.4
0.2
0.0
0
10
V
20
VR
4
Aug-16-2001
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