BAS125-07W Silicon Schottky Diode 3 For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAS125-07W 17s Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT343 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 25 V Forward current IF 100 mA Surge forward current (t 100s) IFSM 500 Total power dissipation, TS = 96 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 ... 150 Maximum Ratings Junction - soldering point1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-16-2001 BAS125-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current nA IR VR = 20 V - - 100 VR = 25 V - - 150 Forward voltage mV VF IF = 1 mA - 385 400 IF = 10 mA - 530 650 IF = 35 mA - 800 950 CT - - 1.1 pF Rf - 16 - AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz 2 Aug-16-2001 BAS125-07W Forward current IF = f (VF ) Total power dissipation Ptot = f(TS) TA = Parameter 10 2 ΙF BAS 125... EHD07115 100 mA mA 80 70 TA = -40C 25 C 85 C 150 C 10 0 IF 10 1 60 50 40 30 10 -1 20 10 10 -2 0.0 0.5 V 0 0 1.0 15 30 45 60 75 Reverse current IR = f (VR ) Differential forward resistance rf = f (IF) f = 10 kHz TA = Parameter ΙR BAS 125... EHD07116 10 4 rf TA = 125 C µA 150 TS VF 10 1 90 105 120 °C 10 0 BAS 125... EHD07118 Ω 10 3 TA = 85 C 10 -1 10 2 10 -2 10 -3 10 1 TA = 25 C 0 10 V 10 0 10 -2 20 10 -1 10 0 10 1 mA 10 2 ΙF VR 3 Aug-16-2001 BAS125-07W Diode capacitance CT = f (VR) f = 1MHz 1.0 CT BAS 125... EHD07117 pF 0.8 0.6 0.4 0.2 0.0 0 10 V 20 VR 4 Aug-16-2001