Diodes DMN32D2LFB4-7B N-channel enhancement mode mosfet Datasheet

DMN32D2LFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(on) max
30V
1.2 @ VGS = 4V
1.5 @ VGS = 2.5V
2.2 @ VGS = 1.8V










ID max
TA = +25C
415mA
370mA
300mA
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Applications





Backlighting
Power Management Functions
DC-DC Converters




Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
Body
Diode
Gate
S
Gate
Protection
Diode
Bottom View
ESD PROTECTED
D
Source
Equivalent Circuit
G
Top View
Pin-Out
Ordering Information (Note 4)
Part Number
DMN32D2LFB4-7
DMN32D2LFB4-7B
Notes:
Marking
DV
DV
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
DMN32D2LFB4-7
DMN32D2LFB4-7B
DV
DV
Top View
Dot Denotes
Drain Side
Top View
Bar Denotes Gate
and Source Side
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
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DV = Product Type Marking Code
June 2013
© Diodes Incorporated
DMN32D2LFB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ID
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Thermal Characteristics
Value
30
10
300
Unit
V
V
mA
350
357
-55 to +150
mW
C/W
C
(@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5) @TA = 25°C
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
PD
RΘJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = +25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Notes:
Min
Typ
Max
Unit
BVDSS
IDSS
30



IGSS



1
10
500
V
A
A
nA
VGS = 0V, ID = 10A
VDS = 30V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VGS(th)
0.6
V
2.2
1.5
1.2

|Yfs|
VSD






1.2



100
0.5

1.4
mS
V
VDS = VGS, ID = 250A
VGS = 1.8V, ID = 20mA
VGS = 2.5V, ID = 20mA
VGS = 4.0V, ID = 100mA
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
ton
toff





39
10
3.6
11
51
78
20
7.2
22
102
pF
pF
pF
nS
nS
RDS (ON)
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Symbol
Turn-on Time
Turn-off Time
Test Condition
VDS = 3V, VGS = 0V
f = 1.0MHz
VDD = 5V, ID = 10mA,
VGS = 0-5V
5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
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DMN32D2LFB4
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.8
1.6
1.4
1.2
VGS = 4V
ID = 100mA
VGS = 2.5V
ID = 20mA
VGS = 1.8V
ID = 20mA
1
0.8
0.6
-75
-50 -25
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C°)
Fig. 7 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
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DMN32D2LFB4
50
f = 1 MHz
40
CT, CAPACITANCE (pF)
Ciss
30
20
10
Coss
Crss
0
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
20
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
A1
D
b1
E
e
b2
L2
L3
X2-DFN1006-3
Dim Min
Max
Typ
A
0.40


A1
0
0.05 0.03
b1
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
0.95 1.05 1.00
E
0.55 0.65 0.60
e
0.35


L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
L3
0.40


All Dimensions in mm
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Dimensions
Z
G1
G2
X
X1
Y
C
X1
X
G2
G1
Y
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
Z
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
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DMN32D2LFB4
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2013, Diodes Incorporated
www.diodes.com
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
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