FDMA3023PZ tm Dual P-Channel PowerTrench® MOSFET -30 V, -2.9 A, 90 mΩ Features General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1.0 A Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. HBM ESD protection level > 2 kV (Note 3) RoHS Compliant Free from halogenated compounds and antimony oxides PIN 1 S1 G1 D1 D1 D2 S1 1 1 66 D1 G1 22 5 G2 D2 3 3 4 S2 D2 G2 S2 5 4 MicroFET 2x2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Ratings -30 Units V ±8 V -2.9 -6 Power Dissipation (Note 1a) 1.4 Power Dissipation (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 RθJA Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 RθJA Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 °C/W Package Marking and Ordering Information Device Marking 323 Device FDMA3023PZ ©2008 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B1 Package MicroFET 2X2 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET December 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA -1.0 V -30 V -24 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C 3 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.4 -0.6 mV/°C VGS = -4.5 V, ID = -2.9 A 71 90 VGS = -2.5 V, ID = -2.6 A 97 130 VGS = -1.8 V, ID = -1.7 A 122 170 VGS = -1.5 V, ID = -1.0 A 151 240 VGS = -4.5 V, ID = -2.9 A, TJ = 125 °C 110 140 VDS = -5 V, ID = -2.9 A 10 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1 MHz 400 530 pF 55 70 pF 45 65 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = -15 V, ID = -1.0 A, VGS = -4.5 V, RGEN = 6 Ω 5 10 ns 4 10 ns ns td(off) Turn-Off Delay Time 62 100 tf Fall Time 18 33 ns Qg(TOT) Total Gate Charge 7.9 11 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15 V, ID = -2.9 A VGS = -4.5 V 0.9 nC 1.9 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2008 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B1 VGS = 0 V, IS = -1.1 A -1.1 (Note 2) IF = -2.9 A, di/dt = 100 A/µs 2 A -0.8 -1.2 V 18 33 ns 6.6 13 nC www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RθJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. (d) RθJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)69 oC/W when mounted on a 1 in2 pad of 2 oz copper. d)151 oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2008 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B1 3 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Notes: 6 VGS = -4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 6 VGS = -3.5 V 5 VGS = -2.5 V 4 VGS = -1.8 V 3 VGS = -1.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 2 1 0 0 0.5 1.0 1.5 2.0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 5 VGS = -1.5 V 4 3 1 1 2 4 5 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 400 ID = -2.9 A VGS = -4.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX SOURCE ON-RESISTANCE (mΩ) ID = -1.45 A 300 rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.2 1.0 200 TJ = 125 oC 100 0.8 0.6 -75 -50 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 10 6 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 5 -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3.5 V 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = -1.8 V VGS = -2.5 V 2 VDS = -5 V 4 3 TJ = 125 oC 2 TJ = 25 oC 1 TJ = 0 0.5 1.0 -55 oC 1.5 VGS = 0 V 1 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.2 2.0 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B1 4 1.2 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = -2.9 A 4 VDD = -10 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 5 VDD = -15 V 3 VDD = -20 V 2 1 Ciss 100 Coss 0 0 2 4 6 8 10 0.1 10 Qg, GATE CHARGE (nC) 1 30 Figure 8. Capacitance vs Drain to Source Voltage 10 -2 10 THIS AREA IS LIMITED BY rDS(on) 10 -ID, DRAIN CURRENT (A) VGS = 0 V -3 -4 10 -5 10 TJ = 125 oC -6 10 TJ = 25 oC -7 10 1 ms 1 10 ms 100 ms 0.1 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 173 oC/W -8 10 o DC TA = 25 C 0.01 0.01 -9 10 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics -Ig, GATE LEAKAGE CURRENT (A) Crss f = 1 MHz VGS = 0 V 0 3 6 9 12 15 0.1 1 10 100 200 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Gate Leakage vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area 200 P(PK), PEAK TRANSIENT POWER (W) 100 VGS = -4.5 V SINGLE PULSE RθJA = 173 oC/W TA = 25 oC 10 1 0.5 -3 10 -2 10 -1 10 1 10 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2008 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B1 5 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 IMPEDANCE, ZθJA NORMALIZED THERMAL 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o 0.01 0.005 -3 10 RθJA = 173 C/W -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B1 6 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout 2.0 A 2X (1.80) B (0.80) (0.50) (1.00) 2.0 (2.25) (0.42) PIN#1 QUADRANT (0.42) 2X TOP VIEW (0.10) 0.65 RECOMMENDED LAND PATTERN (0.20) 0.8 MAX 0.05 0.00 C SIDE VIEW PIN#1 IDENT 1.64? .10 0.35? .10 (0.185) 0.86? .10 (0.65) 0.20 0.35 D 0.25~0.35 0.65 1.30 BOTTOMVIEW A. CONFORMS TOJEDEC REGISTRATION MO-229, VARIATION VCCC EXCEPT AS NOTED. B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. NON-JEDEC DUAL DAP MLP06JrevB ©2008 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B1 7 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2008 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B1 8 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.