2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV) 2SJ511 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.32 Ω (typ.) z High forward transfer admittance z Low leakage current : |Yfs| = 1.4 S (typ.) : IDSS = −100 μA (max) (VDS = −30 V) z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −30 V Drain−gate voltage (RGS = 20 kΩ) VDGR −30 V Gate−source voltage VGSS ±20 V (Note 1) ID −2 A Pulse (Note 1) IDP −6 A PD 0.5 W JEDEC ― (Note 2) PD 1.5 W JEITA ― Single pulse avalanche energy (Note 3) EAS 55 mJ TOSHIBA Avalanche current IAR −2 A Repetitive avalanche energy (Note 4) EAR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current DC Drain power dissipation Drain power dissipation 2−5K1B Weight: 0.05 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Max Unit Rth (ch−a) 250 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = −25 V, Tch = 25°C (initial), L = 10 mH, RG = 25 Ω, IAR = −2 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SJ511 Marking Z Part No. (or abbreviation code) Note 5: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Note 5 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. F Lot No. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = −30 V, VGS = 0 V — — −100 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 — — V Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −1 A — 0.55 0.76 VGS = −10 V, ID = −1 A — 0.32 0.45 VDS = −10 V, ID = −1 A 0.7 1.4 — — 160 — — 30 — Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 85 — tr — 30 — ton — 45 — Rise time Turn−on time VDS = −10 V, VGS = 0 V, f = 1 MHz Switching time Ω S pF ns Fall time tf — 30 — toff — 120 — Total gate charge (Gate−source plus gate−drain) Qg — 5.5 — Gate−source charge Qgs — 4.3 — Gate−drain (“miller”) charge Qgd — 1.2 — Turn−off time VDD ≈ −24 V, VGS = −10 V, ID = −2 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR (Note 1) — — — −2 A Pulse drain reverse current (Note 1) I (Note 1) DRP — — — −6 A Forward voltage (diode) VDSF IDR = −2 A, VGS = 0 V — — 1.5 V Reverse recovery time trr — 40 — ns Reverse recovery charge Qrr IDR = −2 A, VGS = 0 V dIDR / dt = 50 A / μs — 18 — nC 2 2009-09-29 2SJ511 3 2009-09-29 2SJ511 4 2009-09-29 2SJ511 5 2009-09-29 2SJ511 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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