AP03N40J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
BVDSS
400V
RDS(ON)
3.3Ω
ID
2.1A
S
Description
G
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
D
TO-251(J)
S
The TO-251 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
2.1
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
1.3
A
8
A
39
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200907061
AP03N40J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
400
-
-
V
VGS=10V, ID=1A
-
-
3.3
Ω
VGS=0V, ID=250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.8A
-
2.6
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=1.8A
-
8.2
13
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=320V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
3.7
-
nC
2
td(on)
Turn-on Delay Time
VDD=200V
-
10
-
ns
tr
Rise Time
ID=1.8A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=111Ω
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
290
460
pF
Coss
Output Capacitance
VDS=25V
-
32
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5.5
-
pF
Min.
Typ.
IS=1A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=1.8A, VGS=0V,
-
180
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
870
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP03N40J-HF
5
2.4
3
V G =6.0V
ID , Drain Current (A)
10V
8 .0V
7 .0V
V G =6.0 V
T C =150 o C
2
ID , Drain Current (A)
4
10V
8.0V
7.0V
o
T C =25 C
2
1.6
1.2
0.8
1
0.4
0
0
0
4
8
12
16
20
24
28
32
0
V DS , Drain-to-Source Voltage (V)
5
10
15
20
25
30
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
I D =1A
V G =10V
1.1
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
o
Fig 3. Normalized BVDSS v.s. Junction
50
100
150
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.2
5
1.1
Normalized VGS(th) (V)
6
4
IS (A)
0
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
T j = 150 o C
T j = 25 o C
3
2
1
0.9
0.8
0.7
1
0.6
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP03N40J-HF
12
f=1.0MHz
500
400
8
I D =1.8A
V DS =320V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
300
C iss
200
4
100
2
0
C oss
C rss
0
0
2
4
6
8
10
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
100us
ID (A)
1
1ms
10ms
100ms
DC
0.1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4