TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Darlington Ttransistors BDX53F / BDX54F DESCRIPTION The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are BDX54F respectively. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 5 V Collector Current IC 8.0 A Base Current IB 0.2 A Ptot 60 Total Dissipation at Max. Operating Junction Temperature Storage Temperature 150 -55~150 o Tj Tstg W o C TO-220 C O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=160V, IE=0 — — 0.2 mA Collector Cut-off Current ICEO VCE=80V, IB=0 — — 0.5 mA Emitter Cut-off Current IEBO VEB=5.0V, IC=0 — — 2.0 mA Collector-Emitter Sustaining Voltage VCEO IC=50mA, IB=0 160 — — V VCE=5V, IC=2.0A 500 — — DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA — — 2.0 V Base-Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=10mA — — 2.5 V — — 2.5 V Parallel-diode Forward Voltage VF IF=2A