Diodes SMD Type Schottky Diodes BAS70-04/05/06 (KAS70-04/05/06) SOT-23 Unit: mm ■ Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● Fast Switching Speed 2 0.55 +0.05 0.1 -0.01 +0.1 0.97 -0.1 1 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 BAS70-04 BAS70 single diode. 2 0-0.1 3 3 1 +0.1 0.38 -0.1 2 n.c. 1 1 3 3 1 +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● High breakdown voltage 0.4 3 2 BAS70-06 BAS70-05 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Reverse Voltage VRM 70 Peak Reverse Voltage VRRM 70 Average Rectified Current at Temp=25℃ IFAV 70 Non-Repetitive Peak Forward Surge Current t=1s IFSM 100 Pd 215 mW RθJA 500 ℃/W Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 Unit V mA ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Reverse breakdown voltage Forward voltage Reverse voltage leakage current Junction capacitance Test Conditions Min Typ Max VR IR= 10 uA VF1 IF= 1 mA 0.41 VF2 IF= 10 mA 0.75 VF3 IF= 15 mA 1 IR1 VR= 70 V 1 IR2 VR= 50 V 0.1 Cj VR= 0 V, f= 1 MHz Unit 70 2 V uA pF ■ Marking NO. BAS70 BAS70-04 BAS70-05 BAS70-06 Marking 73P* 74P* 75P* 76P* www.kexin.com.cn 1 Diodes SMD Type Schottky Diodes BAS70-04/05/06 (KAS70-04/05/06) ■ Typical Characterisitics 10 2 IR IF 10 2 (1) (µA) (mA) 10 10 (2) 1 1 10 1 (3) 10 1 10 2 (1) 10 2 0 (2) (3) (4) 0.2 0.4 0.6 0.8 VF (V) 1 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. Fig.1 10 3 0 20 40 60 VR (V) 80 (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Forward current as a function of forward voltage; typical values. Fig.2 103 Reverse current as a function of reverse voltage; typical values. 2 Cd (pF) rdif (Ω) 1.5 102 1 10 0.5 1 10−1 1 10 IF (mA) 102 f = 10 kHz. Fig.3 2 2 Differential forward resistance as a function of forward current; typical values. www.kexin.com.cn 0 0 20 40 60 VR (V) 80 f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values.