Eudyna EMM5068VU X-band power amplifier mmic Datasheet

ES/EMM5068VU
Preliminary
X-Band Power Amplifier MMIC
FEATURES
・High Output Power: Pout=33.0dBm (typ.)
・High Linear Gain: GL=26.0dB (typ.)
・Broad Band: 9.5-13.3GHz
・Impedance Matched Zin/Zout=50Ω
・Small Hermetic Metal-Ceramic SMT Package(VU)
DESCRIPTION
The EMM5068VU is a MMIC amplifier that contains a three-stages
amplifier, internally matched, for standard communications band in the
9.5 to 13.3GHz frequency range.
Eudyna Devices’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Device
の写真
Symbol
VDD
Rating
10
Unit
V
VGG
-3
V
Input Power
Pin
26
dBm
Channel Temperature
Storage Temperature
Tch
Tstg
+175
Gate-Source Voltage
o
o
-55 to +125
C
C
RECOMMENDED OPERATING CONDITIONS
Item
Drain-Source Voltage
Symbol
VDD
Conditions
6
Unit
V
Drain-Source Current
IDD
1300
mA
Input Power
Pin
Top
<=12
-40 to +85
dBm
Operating Case Temperature
o
C
o
ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25 C)
Item
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
f
P1dB
G1dB
Test Conditions
VDD=6V
IDD=1300mA
31*1
33*1
Zs=Zl=50ohm
28*2
*1:f=9.5~11.7GHz
*2:f=11.7~13.3GHz
Power-added Efficiency at 1dB G.C.P.
Third Order Intermodulation*
Drain Current at 1dB G.C.P.
Input Return Loss (at Pin=-20dBm)
Output Return Loss (at Pin=-20dBm)
ESD
ηadd
IM3
*3:∆f=10MHz ,
IDD
GHz
dBm
30*2
22*1
25*1
-
dB
*2
23*2
21*1
-
%
-37*3
*2
-
20
-
13
-40*3
*1
mA
mA
-
1700
-
1500*2 2400*2
-
-8
-8
2400
dBc
*1
2-Tone Test,
RLin
RLout
Unit
-
Pout=20dBm S.C.L.
-
dB
dB
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Class 0
~ 199V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
CASE STYLE
Edition 1.2
June 2005
Limits
Typ. Max.
13.3
Min.
9.5
VU
1
Preliminary
ES/EMM5068VU
X-Band Power Amplifier MMIC
OUTPUT POWER , DRAIN CURRENT
vs. INPUT POWER
OUTPUT POWER vs. FREQUENCY
VDD=6V, IDD(DC)=1300mA
VDD=6V, IDD(DC)=1300mA
Output Power [dBm]
Output Power[dBm]
32
Pin=+4dBm
30
28
26
Pin=0dBm
24
22
Pin=-4dBm
20
9
10
11
12
13
14
9.5GHz
11.7GHz
13.3GHz
34
Pin=+10dBm
34
8
2700
36
36
32
2500
2300
30
2100
28
1900
26
1700
24
1500
22
1300
20
1100
900
18
15
-8
Frequency[GHz]
-4
0
4
8
Input Power [dBm]
POWER ADDED EFFICIENCY vs FREQUENCY
VDD=6V, IDD(DC)=1300mA
Power Added Efficiency[%]
35
30
25
Pin=10dBm
20
P1dB
15
Pin=+4dBm
10
5
Pin=0dBm
0
Pin=-4dBm
8
9
10
11
12
13
14
15
Frequency[GHz]
2
12
16
Drain Current [mA]
P1dB
ES/EMM5068VU
Preliminary
X-Band Power Amplifier MMIC
IMD vs. FREQUENCY
IMD vs OUTPUT POWER
VDD=6V, IDD(DC)=1300m A, Pout=20dBm S.C.L.
VDD=6V, IDD(DC)=1300m A
-20
Intermodulation Distortion [dBc]
Intermodulation Distortion [dBc]
-35
-40
IM3
-45
-50
-55
-60
IM5
-65
-70
-25
9.5GHz
11.7GHz
13.3GHz
-30
-35
IM3
-40
-45
-50
-55
-60
IM5
-65
-70
8
9
10
11
12
13
14
15
Frequency [GHz]
17
19
21
23
25
27
29
2-Tone Total Output Pow er [dBm ]
3
31
Preliminary
ES/EMM5068VU
X-Band Power Amplifier MMIC
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Voltage
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Voltage
IDD(DC)=1300mA @11.7GHz
IDD(DC)=1300mA @9.5GHz
2300
32
2100
28
1900
26
1700
24
1500
22
1300
1100
20
1100
900
18
2100
28
1900
26
1700
24
1500
22
1300
20
-8
-4
0
4
8
12
16
900
-8
Input Power [dBm]
-4
0
12
16
IDD(DC)=1300mA
36
38
38
2700
4V
5V
6V
2500
36
2300
34
Drain Current [mA]
9.5GHz
11.7GHz
13.3GHz
36
34
32
32
30
30
28
28
26
26
1300
24
24
20
1100
22
22
18
900
20
20
30
2100
28
1900
26
1700
24
1500
22
-8
-4
0
4
8
12
P1dB [dBm]
Output Power [dBm]
8
OUTPUT POWER, GAIN vs. DRAIN VOLTAGE
IDD(DC)=1300mA @13.3GHz
32
4
Input Power [dBm]
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Voltage
34
2300
30
30
18
2500
Drain Current [mA]
34
4V
5V
6V
3
16
Input Power [dBm]
4
4
5
VDD [V]
6
7
G1dB [dB]
32
2500
Output Power [dBm]
Output Power [dBm]
34
Drain Current [mA]
4V
5V
6V
2700
36
2700
36
ES/EMM5068VU
Preliminary
X-Band Power Amplifier MMIC
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Current
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Current
VDD=6V @11.7GHz
VDD=6V @9.5GHz
2100
32
1900
28
1700
26
1500
24
1300
22
1100
900
20
900
700
18
1900
28
1700
26
1500
24
1300
22
1100
20
-8
-4
0
4
8
12
700
-8
16
-4
0
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Current
12
16
VDD=6V
1100mA
1300mA
1100 A
2500
40
2300
38
2100
36
Drain Current [mA]
36
40
9.5GHz
11.7GHz
13.3GHz
38
36
34
34
32
32
30
30
28
28
1100
26
26
20
900
24
24
18
700
22
30
1900
28
1700
26
1500
24
1300
22
-8
-4
0
4
8
12
P1dB [dBm]
Output Power [dBm]
8
OUTPUT POWER, GAIN vs. Drain Current
VDD=6V @13.3GHz
32
4
Input Power [dBm]
Input Power [dBm]
34
2100
30
30
18
2300
Drain Current [mA]
34
1100mA
1300mA
1100 A
1000
16
Input Power [dBm]
5
22
1100
1200
1300
Drain Current [mA]
1400
G1dB [dB]
32
2300
Output Power [dBm]
Output Power [dBm]
34
Drain Current [mA]
1100mA
1300mA
1100 A
2500
36
2500
36
Preliminary
ES/EMM5068VU
X-Band Power Amplifier MMIC
IMD PERFORMANCE vs OUTPUT POWER
by Drain Voltage
IMD PERFORMANCE vs OUTPUT POWER
by Drain Voltage
IDD(DC)=1300m A @9.5GHz
IDD(DC)=1300m AV @11.7GHz
-20
-25
Intermodulation Distortion [dBc]
Intermodulation Distortion [dBc]
-20
4V
5V
6V
-30
-35
IM3
-40
-45
-50
-55
-60
IM5
-65
-70
4V
5V
6V
-30
-35
IM3
-40
-45
-50
-55
-60
IM5
-65
-70
17
19
21
23
25
27
29
31
17
2-Tone Total Output Pow er [dBm ]
IDD(DC)=1300m A @13.3GHz
-20
-25
4V
5V
6V
-30
-35
IM3
-40
-45
-50
-55
-60
IM5
-65
-70
17
19
21
23
25
27
19
21
23
25
27
29
2-Tone Total Output Pow er [dBm ]
IMD PERFORMANCE vs OUTPUT POWER
by Drain Voltage
Intermodulation Distortion [dBc]
-25
29
31
2-Tone Total Output Pow er [dBm ]
6
31
ES/EMM5068VU
Preliminary
X-Band Power Amplifier MMIC
IMD PERFORMANCE vs OUTPUT POWER
by Drain Current
IMD PERFORMANCE vs OUTPUT POWER
by Drain Current
VDD=6V @11.7GHz
VDD=6V @9.5GHz
-20
1100m A
1300m A
1100 A
-25
-30
Intermodulation Distortion [dBc]
Intermodulation Distortion [dBc]
-20
-35
IM3
-40
-45
-50
-55
IM5
-60
-65
-70
-30
-35
IM3
-40
-45
-50
-55
-60
IM5
-65
-70
17
19
21
23
25
27
29
31
2-Tone Total Output Pow er [dBm ]
VDD=6V @13.3GHz
-20
1100m A
1300m A
-25
-30
-35
IM3
-40
-45
-50
-55
-60
IM5
-65
-70
17
19
21
23
25
27
17
19
21
23
25
27
29
2-Tone Total Output Pow er [dBm ]
IMD PERFORMANCE vs OUTPUT POWER
by Drain Current
Intermodulation Distortion [dBc]
1100m A
1300m A
-25
29
31
2-Tone Total Output Pow er [dBm ]
7
31
Preliminary
ES/EMM5068VU
X-Band Power Amplifier MMIC
OUTPUT POWER, GAIN vs. TEMPERATURE
36
34
34
32
32
30
30
28
28
26
9.5GHz
11.7GHz
13.3GHz
26
24
22
24
-50
-25
0
25
50
o
Temperature [ C]
8
75
100
Gain [dB] @Pin=-6dBm
Psat [dBm] @Pin=12dBm
VDD=6V, IDD(DC)=1300mA
ES/EMM5068VU
Preliminary
X-Band Power Amplifier MMIC
■S-PARAMETER
VDD=6V, IDD(DC)=1300mA
Input/Output Return Loss vs. Frequency
Input/Output Return Loss [ dB ]
VDD=6V, IDD=1300mA
0
-10
-20
-30
- Input Return Loss
- Output Return Loss
-40
9
10
11
12
13
14
Frequency [GHz]
Small Signal Gain vs. Frequency
VDD=6V, IDD=1300mA
Small Signal Gain [dB]
32
28
24
20
16
12
8
4
0
9
10
11
12
Frequency [GHz]
9
13
14
Preliminary
ES/EMM5068VU
X-Band Power Amplifier MMIC
■S-PARAMETER
VDD=6V, IDD(DC)=1300mA
Frequency
[GHz]
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10.0
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
11.0
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
12.0
12.1
12.2
12.3
12.4
12.5
12.6
12.7
12.8
12.9
13.0
13.1
13.2
13.3
13.4
13.5
S11
MAG
ANG
0.299
-75.9
0.286
-79.8
0.272
-83.1
0.258
-86.8
0.243
-90.2
0.229
-93.7
-97.2
0.217
0.203
-99.4
-102.3
0.186
-105.8
0.171
-108.6
0.153
0.136
-111.9
0.117
-113.8
0.094
-115.0
0.071
-118.0
0.047
-119.8
0.021
-112.0
6.6
0.010
0.040
30.3
0.076
31.8
30.0
0.110
26.0
0.146
21.2
0.181
16.4
0.216
12.0
0.251
0.282
8.4
0.307
4.0
0.337
-0.2
0.359
-4.4
0.385
-8.6
0.403
-12.0
-16.4
0.414
0.426
-20.5
0.433
-24.3
0.436
-28.3
0.436
-31.4
0.429
-34.4
-37.5
0.421
-39.8
0.415
0.408
-41.9
0.402
-43.8
0.398
-45.3
0.394
-47.3
S21
MAG
ANG
22.375
-37.1
22.230
-51.7
22.101
-66.1
21.906
-80.0
21.784
-93.7
21.610
-107.1
21.473
-120.1
21.385
-133.1
21.328
-145.8
21.373
-158.5
21.461
-171.0
21.575
176.5
21.702
163.9
21.904
151.3
138.4
22.113
22.540
125.6
22.708
112.4
22.883
99.4
85.7
23.161
23.333
72.0
23.299
58.4
23.283
44.8
30.9
23.129
22.757
17.3
22.587
3.7
22.307
-9.8
-23.0
21.801
21.387
-36.2
-49.4
21.113
20.670
-62.4
20.338
-75.0
20.065
-88.1
19.624
-101.1
19.288
-114.4
19.027
-127.2
18.654
-140.1
-152.8
18.195
17.858
-165.5
-178.2
17.512
17.274
169.3
157.4
17.111
144.9
17.108
132.6
17.181
10
S12
MAG
ANG
-159.0
0.001
0.001
-171.2
-166.0
0.001
-174.2
0.001
0.000
-174.7
-162.9
0.001
-166.4
0.001
-170.5
0.001
0.000
179.6
0.000
-177.1
-154.3
0.001
-145.5
0.001
-153.6
0.001
-152.2
0.001
0.001
-143.1
-144.8
0.001
-139.4
0.001
-142.2
0.001
0.001
-143.1
0.001
-131.6
-134.6
0.001
0.001
-136.1
-143.5
0.001
-147.5
0.001
-143.9
0.001
-136.8
0.001
-144.0
0.001
-130.5
0.001
0.001
-141.1
0.001
-131.9
-133.6
0.001
-120.0
0.001
0.001
-121.0
0.001
-117.6
0.001
-119.3
0.002
-111.7
0.002
-112.5
0.002
-113.4
0.002
-117.5
0.002
-123.3
0.003
-126.9
0.003
-131.6
0.004
-132.3
S22
MAG
ANG
0.293
-24.1
0.296
-29.0
0.297
-33.3
0.300
-37.5
0.304
-40.9
0.305
-44.2
0.307
-47.4
0.308
-50.2
0.307
-52.9
0.305
-55.8
-58.2
0.301
0.294
-61.0
0.287
-63.4
0.276
-65.7
-67.9
0.261
0.243
-70.1
0.224
-71.4
0.200
-72.3
-72.2
0.174
-69.8
0.148
-63.9
0.123
-53.2
0.102
0.092
-36.7
0.093
-18.2
-4.8
0.109
0.131
4.1
8.5
0.154
0.179
10.1
0.202
10.5
0.223
9.5
0.240
8.5
0.255
6.8
0.267
4.9
0.276
3.2
0.282
1.4
0.287
0.1
0.290
-1.2
0.292
-2.3
0.297
-2.8
0.300
-3.6
0.309
-4.3
-5.4
0.319
0.334
-6.8
ES/EMM5068VU
Preliminary
X-Band Power Amplifier MMIC
∆Tch vs. DRAIN VOLTAGE
(Reference Data)
IDD(DC)=1300mA
45
40
35
o
∆ Tch[ C]
30
25
20
15
10
5
0
3
4
5
6
7
VDD[V]
Note : ∆Tch : Channel Temperature Rise from PCB surface
MTTF vs. Tch
1.E+12
1.E+11
Ea=1.56eV
1.E+10
MTTF [hrs]
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
50
100
150
o
Tch [ C]
11
200
250
Preliminary
ES/EMM5068VU
X-Band Power Amplifier MMIC
■ Block diagram
PIN ASSIGNMENT
1 : VGG
2 : RF in
3 : VGG
4 : VDD
5 : RF out
6 : VDD
■ Recommended Bias Circuit
D
N
G
1uF
1000pF
1000pF
1uF
VGG
2
5
1
6
1000pF
VDD
VDD
D
N
G
1uF
4
t
u
o
F
R
n
i
F
R
VGG
3
1000pF
1uF
Note 1: The capacitors are recommended on the bias supply line, close to the package,
in order to prevent video oscillations which could damage the module.
Note 2: Two pins named VGG are internally connected.
Note 3: Two pins named VDD are internally connected.
12
ES/EMM5068VU
Preliminary
X-Band Power Amplifier MMIC
■ Package Outline
13
Preliminary
ES/EMM5068VU
X-Band Power Amplifier MMIC
■ PCB Pads and Solder-resist Pattern
Unit: mm [inches]
PCB: Diclad-522
Under plating: Cu
: Nickel (Ni) 1 ∼ 4 µm
Top plating: Gold (Au)
(Flash plating 0.1 µm or less)
Resist Pattern
14
ES/EMM5068VU
Preliminary
X-Band Power Amplifier MMIC
■TUNING PERFORMANCE
Device performance at higher band (11.7 to 13.3GHz) can be improved
by changing PCB line pattern.
PCB: RO4003
Er : 3.38
Thickness : 0.2mm
Tuning Stub
IMD vs. Output Power
Output Power vs. Frequency
VDD=6V, IDD(DC)=1300mA, with-Tuning
VDD=6V, IDD(DC)=1300m A, w ith-Tuning
-20
Output Power[dBm]
34
Pin=+10dBm
32
30
Pin=+4dBm
28
26
Pin=0dBm
24
22
Pin=-4dBm
20
8
9
10
11
12
13
14
Intermodulation Distortion [dBc]
36
P1dB
-25
9.5GHz
11.7GHz
13.3GHz
-30
-35
IM3
-40
-45
-50
-55
-60
IM5
-65
-70
15
17
Frequency[GHz]
19
21
23
25
27
29
2-Tone Total Output Pow er [dBm ]
15
31
Preliminary
ES/EMM5068VU
X-Band Power Amplifier MMIC
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2005 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
16
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