BAS40 / -04 / -05 / -06 SMD Schottky Barrier Diode 200mW, Low VF, Small Signal Diode SOT-23 F A C Features B Metal-on-silicon Shcottky Barrier E Surface device type mounting Moisture sensitivity level 1 G D Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : Flat lead SOT 23 small outline plastic package A 2.80 3.00 0.110 0.118 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.20 1.40 0.047 0.055 C 0.30 0.50 0.012 0.020 High temperature soldering guaranteed: 260°C/10s D 1.80 2.00 0.071 0.079 Weight : 0.008gram (approximately) Marking Code : 43.44.45.46 E 2.25 2.55 0.089 0.100 F 0.90 1.20 0.035 0.043 G BAS40 BAS40-04 0.550 REF BAS40-05 0.022 REF BAS40-06 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Symbol Value Units PD 200 mW VRRM 40 V Reverse Voltage VR 40 V Repetitive Peak Forward Current IFRM 200 mA mA Repetitive Peak Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) (Note 2) Junction and Storage Temperature Range IO 200 IFSM 0.6 A RθJA 357 °C/W TJ, TSTG -65 to + 125 °C Electrical Characteristics Type Number Reverse Breakdown Voltage IR= 10μA Forward Voltage IF= IF= IF= 1mA 10mA 40mA Symbol Min Max Units V(BR) 40 - V - 0.38 - 0.50 - 1.00 VF V Reverse Leakage Current VR= 30V IR - 0.2 μA Junction Capacitance VR=1V, f=1.0MHz CJ - 5 pF Trr - 5.0 ns Reverse Recovery Time IF =IR=10mA,RL=100Ω,IRR=1mA Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Notes:2. Valid provided that electrodes are kept at ambient temperature Version : D11 BAS40 / -04 / -05 / -06 200mW, Low VF, SMD Schottky Barrier Diode Small Signal Diode Rating and Sharacteristic Curves ( BAS40 / -04 / -05 / -06 ) FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT. (mA) PD, POWER DISSIPATION (mW) FIG.1- POWER DERATING CURVE 200 100 0 0 25 50 75 100 600 8.3ms Single Half Sine Wave (JEDEC Method) 300 0 125 1 2 5 10 20 NUMBER OF CYCLES AT 60Hz TA, AMBIENT TEMPERATURE ( C) FIG.3- TYPICAL FORWARD CHARACTERISTICS 50 100 FIG.4- TYPICAL REVERSE CHARACTERISTICS 1 10000 IR, INSTANTANEOUS REVERSE CURRENT. ( nnA) INSTANTANEOUS FORWARD CURRENT (mA) TA= 125 0C 0.1 TA= -40 0C TA= 0 0C 0.01 TA= 25 0C TA= 70 0C 0.001 TA= 125 0C 0.0001 0 1.0 0.8 Tj, INSTANTANEOUS FORWARD VOLTAGE (mV) 0.2 0.4 0.6 1000 TA= 70 0C 100 TA= 25 0C 10 TA= 0 0C 1 0.1 1.2 JUNCTION CAPACITANCE (pF) TRANSIENT THERMAL IMPEDANCE. (OC/W) 100 f = 1.0MHz 2.0 0 0 5 10 REVERSE VOLTAGE 15 0 10 20 30 40 VR, REVERSE VOLTAGE. (V) FIG.5- TYPICAL TOTAL CAPACITANCE VS REVERSE VOLTAGE 4.0 TA= -40 0C 20 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10 1 0.1 0.01 0.1 1 PULSE DURATION. (sec) 10 100 Version : D11