POINN BDV65B Npn silicon power darlington Datasheet

BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
●
JUNE 1993 - REVISED MARCH 1997
Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
●
125 W at 25°C Case Temperature
●
12 A Continuous Collector Current
●
Minimum hFE of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDV65
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BDV65A
BDV65B
VALUE
VCBO
80
100
BDV65C
120
BDV65
60
BDV65A
BDV65B
UNIT
60
VCEO
BDV65C
80
100
V
V
120
V EBO
5
V
IC
12
A
ICM
15
A
IB
0.5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BDV65
V (BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE
VEC
Collector-emitter
MAX
BDV65A
80
BDV65B
100
BDV65C
120
IC = 30 mA
IB = 0
VCB = 30 V
IB = 0
BDV65
2
Collector-emitter
V CB = 40 V
IB = 0
BDV65A
2
cut-off current
V CB = 50 V
IB = 0
BDV65B
2
V CB = 60 V
IB = 0
BDV65C
VCB = 60 V
IE = 0
BDV65
0.4
V CB = 80 V
IE = 0
BDV65A
0.4
V CB = 100 V
IE = 0
BDV65B
0.4
Collector cut-off
V CB = 120 V
IE = 0
BDV65C
0.4
current
V CB = 30 V
IE = 0
TC = 150°C
BDV65
2
V CB = 40 V
IE = 0
TC = 150°C
BDV65A
2
V CB = 50 V
IE = 0
TC = 150°C
BDV65B
2
V CB = 60 V
IE = 0
TC = 150°C
BDV65C
2
VEB =
5V
IC = 0
VCE =
4V
IC = 5 A
(see Notes 4 and 5)
20 mA
IC = 5 A
4V
breakdown voltage
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
IB =
VCE =
voltage
Parallel diode
IE =
forward voltage
10 A
(see Note 4)
TYP
UNIT
60
V
mA
2
mA
5
mA
(see Notes 4 and 5)
2
V
IC = 5 A
(see Notes 4 and 5)
2.5
V
IB = 0
(see Notes 4 and 5)
3.5
V
MAX
UNIT
1
°C/W
35.7
°C/W
1000
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
PRODUCT
2
INFORMATION
MIN
TYP
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS140AD
70000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = 4 V
tp = 300 µs, duty cycle < 2%
100
0·5
1·0
10
TCS140AE
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1·0
0·5
20
TC = -40°C
TC = 25°C
TC = 100°C
0
0·5
1·0
IC - Collector Current - A
10
20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS140AF
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
0·5
0
0·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
1·0
10
20
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS140AA
Ptot - Maximum Power Dissipation - W
140
120
100
80
60
40
20
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 4.
PRODUCT
4
INFORMATION
125
150
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
MDXXAW
INFORMATION
5
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION
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