Transistors IC SMD Type PNP General Purpose Transistors BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA mW Total power dissipation Ptot 250 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BCW29,BCW30 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current BCW29 DC current gain Testconditons -10 ìA IC = 0; VEB = -5 V -100 nA hFE IC = -2 mA; VCE = -5 V 120 260 215 500 IC = -10 mA; IB = -0.5 mA -80 mV IC = -50 mA; IB = -2.5 mA -150 mV IC = -10 mA; IB = -0.5 mA -720 mV IC = -50 mA; IB = -2.5 mA IC = -2 mA; VCE = -5 V Collector capacitance CC IE = ie = 0; VCB = -10 V; f = 1 MHz Transition frequency fT IC = -10 mA; VCE = -5 V; f = 100 MHz NF IC = -200 ìA; VCE = -5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz 2 TYPE BCW29 BCW30 C1 C2 www.kexin.com.cn nA IE = 0; VCB = -32 V; Tj = 100 VBE Marking -100 IEBO Base to emitter voltage hFE Classification Unit ICBO VBE(sat) Noise figure Max IE = 0; VCB = -32 V VCE(sat) Base to emitter saturation voltage Typ ICBO BCW30 Collector-emitter saturation voltage Min -810 -600 mV -750 4.5 mV pF 100 MHz 10 dB