A ll data sheet.com ES3AF THRU ES3JF SURFACE MOUNT SUPER FAST RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURES SMAF The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Super fast switching for high efficiency Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds at terminals Glass passivated chip junction Cathode Band Top View 0.110(2.80) 0.094(2.40) 0.059(1.50) 0.051(1.30) 0.144(3.65) 0.128(3.25) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) 0.047(1.20) 0.028(0.70) MECHANICAL DATA Case: JEDEC SMAF molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0018 ounce, 0.064 grams 0.189(4.80) 0.173(4.40) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) VRRM VRMS VDC ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF 50 35 50 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 VOLTS VOLTS VOLTS I(AV) 3.0 Amps IFSM 50.0 Amps VF Typical thermal resistance (NOTE 3) Operating junction and storage temperature range 100 70 100 UNITS 0.95 1.25 1.7 Volts IR 5.0 200.0 µA trr 35 ns CJ RθJA TJ,TSTG 60.0 40.0 -50 to +150 pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas www.szyxwkj.com A ll data sheet.com RATINGS AND CHARACTERISTIC CURVES ES3AF THRU ES3JF Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.5 300 3.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.4 1.8 1.2 Single phase half wave resistive or inductive P.C.B mounted on 0.315×0.315"(8.0×8.0mm ) pad areas 0.6 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Lead Temperature (°C) 80 60 100 % of PIV.VOLTS Fig.5 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 45 10 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 40 20 ES3AF 1.0 ES3EF ES3JF 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instaneous Forward Voltage (V) 40 35 30 25 20 T J =25°C f = 1.0MHz V sig = 50mV p-p 15 10 0.1 1 10 Reverse Voltage (V) www.szyxwkj.com 100