PHILIPS BLV33F Vhf linear power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV33F
VHF linear power transistor
Product specification
1996 Oct 10
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
PINNING - SOT119A
FEATURES
• Internally matched input for wideband operation and
high power gain
PIN
SYMBOL
• Diffused emitter ballasting resistors for an optimum
temperature profile
1
e
emitter
2
e
emitter
3
b
base
4
c
collector
5
e
emitter
6
e
emitter
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.
DESCRIPTION
handbook, halfpage
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
1⁄ ” 6 lead SOT119A capstan package with ceramic cap.
2
All leads are isolated from the flange.
1
2
3
4
5
6
c
b
e
MAM269
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a common emitter push-pull test circuit.
MODE OF
OPERATION
fvision
(MHz)
VCE
(V)
IC, IC(ZS)
(A)
CW, class-A
224.25
25
3.2
CW, class-AB
224.25
28
0.2
Th
(°C)
dim(1)
(dB)
Po sync (1)
(W)
70
−55
>13
>13.5
25
−55
typ. 19
typ. 14.8
70
−
typ. 85
typ. 10.5
GP
(dB)
sync compr.(2)
sync in/sync out
(%)
30/25
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
2. Television service (negative modulation, C.C.I.R. system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10
2
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter voltage
VBE = 0
−
65
V
VCEO
collector-emitter voltage
open base
−
33
V
VEBO
emitter-base voltage
open collector
−
4
V
IC
collector current (DC)
−
12.5
A
IC(AV)
average collector current
−
12.5
A
ICM
peak collector current
f > 1 MHz
−
20
A
Ptot
total power dissipation (DC)
Tmb = 25 °C
−
133
W
Prf
RF power dissipation
f > 1 MHz; Tmb = 25 °C
−
162
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb(dc) thermal resistance from junction to mounting
base (DC dissipation)
Pdiss = 80 W; Tmb = 82 °C;
Th = 70 °C
1.43
K/W
Rth j-mb(rf)
thermal resistance from junction to mounting
base (RF dissipation)
Pdiss = 80 W; Tmb = 82 °C;
Th = 70 °C
1.17
K/W
Rth mb-h
thermal resistance from mounting base to
heatsink
Pdiss = 80 W; Tmb = 82 °C;
Th = 70 °C
0.2
K/W
MGG132
102
handbook, halfpage
MGG133
200
handbook, halfpage
Ptot
(W)
IC
(A)
150
(2)
(1)
10
(1)
(3)
(2)
100
1
1
10
VCE (V)
50
102
0
(1) Tmb = 25 °C.
(2) Th = 70 °C.
(3) Second breakdown limit (independent of temperature).
Th (°C)
(1) Continuous DC (including RF class-A) operation.
(2) Continuous RF operation.
Fig.2 DC SOAR.
1996 Oct 10
50
Fig.3 Power derating curves.
3
100
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG144
2.0
handbook, full pagewidth
20
Rth j-h
Th
(K/W)
=1
°C
100
°C
80
°C
60
°C
40
1.8
°C
20 °
C
1.6
0 °C
Tj = 200 °C
175 °C
1.4
150 °C
125 °C
100 °C
1.2
75 °C
1.0
50
0
100
Ptot (W)
150
Rth mb-h = 0.2 K/W.
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters.
Example
Nominal class-A operation (without RF signal): VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Figure 4 shows:
Rth j-h = max. 1.63 K/W
Tj = max. 200 °C.
Typical device:
Rth
j-h
= typ.1.53 K/W
Tj = typ. 192 °C.
1996 Oct 10
4
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−
MAX.
UNIT
−
V
V(BR)CES
collector-emitter breakdown voltage VBE = 0; IC = 25 mA
65
V(BR)CEO
collector-emitter breakdown voltage open base; IC = 100 mA
33
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 10 mA
4
−
−
V
ICES
collector cut-off current
VBE = 0; VCE = 30 V
−
−
1
mA
hFE
DC current gain
VCE = 25 V; IC = 3 A; note 1
15
50
100
VCEsat
collector-emitter saturation voltage
IC = 6 A; IB = 0.6 A; note 1
−
0.75
−
V
fT
transition frequency
VCB = 25 V; IE = −3 A;
f = 100 MHz; note 2
−
680
−
MHz
VCB = 25 V; IE = −6 A;
f = 100 MHz; note 2
−
750
−
MHz
−
155
−
pF
88
−
pF
3
−
pF
Cc
collector capacitance
VCB = 25 V; IE = ie = 0; f = 1 MHz
Cre
feedback capacitance
IC = 50 mA; VCE = 25 V; f = 1 MHz −
Ccf
collector-flange capacitance
−
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0.01.
1996 Oct 10
5
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG129
MGG130
600
75
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
(1)
400
50
(2)
200
25
0
0
0
5
10
IC (A)
0
15
20
Tj = 25 °C.
(1) VCE = 25 V.
(2) VCE = 5 V.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
DC current gain as a function of collector
current; typical values.
MGG131
1000
Collector capacitance as a function of
collector-base voltage; typical values.
MGG118
10
handbook, halfpage
40
VCB (V)
handbook, halfpage
fT
(MHz)
800
IC
(A)
(1)
(2)
600
1
400
200
0
−0
−5
−10
IE (A)
10−1
0.5
−15
VCB = 25 V; f = 100 MHz; Tj = 25 °C.
VCE = 25 V.
(1) Th = 70 °C.
(2) Th = 25 °C.
Fig.7
Fig.8
Transition frequency as a function of emitter
current; typical values.
1996 Oct 10
6
1
1.5
VBE (V)
Collector current as a function of
base-emitter voltage; typical values.
2
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
APPLICATION INFORMATION
RF performance in VHF class-A operation (linear power amplifier)
MODE OF
OPERATION
CW, class-A
fvision
(MHz)
VCE
(V)
224.25
IC
(A)
25
3.2
Th
(°C)
dim(1)
(dB)
Po sync(1)
(W)
GP
(dB)
70
−55
>13
>13.5
70
−55
typ. 14.5
typ. 14.5
70
−52
typ. 22
typ. 14.5
25
−55
typ. 19
typ. 14.8
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
C5
handbook, full pagewidth
+VBB
+VCC
C6
C9
C10
C13
R1
L4
L2
C7
C3
50 Ω
input
C1
D.U.T.
C11
L1
L6
L3
C2
C4
C15
L5
C8
C12
50 Ω
output
C14
MGG146
Fig.9 Class-A test circuit at fvision = 224.25 MHz.
1996 Oct 10
7
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
List of components used in test circuit (see Figs 9 and 10).
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C15
multilayer ceramic chip
capacitor; note 1
560 pF, 500 V
C2, C4, C12, C14
film dielectric trimmer
4 to 40 pF
C3
multilayer ceramic chip
capacitor; note 1
10 pF, 500 V
C5
multilayer ceramic chip
capacitor
470 nF, 50 V
2222 856 48474
C6, C10
multilayer ceramic chip
capacitor
680 pF, 50 V
2222 852 13681
C7, C8
multilayer ceramic chip
capacitor; note 1
47 pF, 500 V
C9
polyester capacitor
330 nF
C11
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
C13
solid tantalum capacitor
6.8 µF, 35 V
L1
2 turns of 1.6 mm enamelled
Cu wire
L2
microchoke
1 µH
L3
stripline; note 2
30 Ω
L4
2 turns of closely wound
1 mm enamelled Cu wire
L5
stripline; note 2
L6
2 turns of 1.6 mm enamelled
Cu wire
R1
carbon resistor
2222 809 08002
placed 8 mm from
transistor edge
int. diameter 5 mm
length 5 mm
leads 2 × 3 mm
4322 057 01080
6 mm × 32.7 mm
int. diameter 5 mm
leads 2 × 10 mm
30 Ω
6 mm × 24 mm
int. diameter 4 mm
length 4.5 mm
leads 2 × 3 mm
10 Ω
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16".
1996 Oct 10
8
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
115
handbook, full pagewidth
rivets
rivets
50
rivets
rivets
+VBB
+VCC
C13
R1
C5
C2
L2
C3
50 Ω
input
C10
C6
C9
L4
C7
L3
C11
C14
50 Ω
output
L5
L6 C15
C1 L1
C8
C12
C4
MGG149
Dimensions in mm.
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections
are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the
copper on the component side and the ground-plane.
Fig.10 Component layout and printed-circuit board for 224.25 MHz class-A test circuit.
1996 Oct 10
9
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG135
MGG134
−44
dim
30
handbook, halfpage
handbook, halfpage
−48
15
(1)
(dB)
Gp
dcm
Gp
(2)
(%)
(dB)
14
20
−52
(2)
(1)
(2)
13
(1)
−56
10
12
−60
dim
11
−64
10
0
20
30
Po sync (W)
0
40
20
Po sync (W)
40
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz.
(1) Th = 25 °C.
(2) Th = 70 °C.
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz.
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.11 Intermodulation distortion and power gain
as a functions of output power.
Fig.12 Cross-modulation distortion as a function of
output power.
Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak
sync level (see Fig.11). Intermodulation distortion of input signal ≤−70 dB.
Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB (see Fig.12).
Ruggedness in class-A operation
The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases up to
30 W (RMS) or 40 W (PEP) under the following conditions: VCE = 25 V; IC = 3.2 A; Th = 70 °C; f = 224.25 MHz;
Rth mb-h = 0.2 K/W.
1996 Oct 10
10
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG137
MGG136
6
1
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
ri
4
xi
0
RL
2
XL
−1
50
150
0
50
250
f (MHz)
150
f (MHz)
250
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Fig.13 Input impedance as a function of frequency
(series components); typical values.
Fig.14 Load impedance as a function of frequency
(series components); typical values.
MGG138
30
handbook, halfpage
Gp
(dB)
20
10
0
50
150
f (MHz)
250
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Fig.15 Power gain as a function of frequency;
typical values.
1996 Oct 10
11
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
RF performance in VHF class-AB operation (C.W.).
MODE OF
OPERATION
f
(MHz)
VCE
(V)
IC, IC(ZS)
(A)
Th
(°C)
CW, class-AB
224.25
28
0.2
70
ηC
(%)
PL
(W)
IC
(A)
GP
(dB)(1)
40
typ. 2.75
typ. 52
typ. 11.5
85
typ. 4.25
typ. 71
typ. 10.5
Note
1. Gain compression point of 1 dB is at typical 85 W (minimum 75 W). Using a 3rd-order amplitude transfer
characteristic, 1 dB compression corresponds with 30 % sync input / 25 % sync output compression in television
service (negative modulation, C.C.I.R. system).
handbook, full pagewidth
C6
+VBB
+VCC
C10
C7
C15
R1
L4
L2
C1
50 Ω
C8
C4
C2
D.U.T.
C11
C13
L1
L6
L3
C3
C16
C5
C18
50 Ω
L5
C12
C9
C14
C17
MGG147
Fig.16 Class-AB test circuit at fvision = 224.25 MHz.
1996 Oct 10
12
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
List of components used in test circuit (see Figs 16 and 17).
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C18
multilayer ceramic chip
capacitor; note 1
620 pF, 100 V
C2
multilayer ceramic chip
capacitor; note 1
27 pF, 500 V
C3
film dielectric trimmer
2 to 18 pF
C4
multilayer ceramic chip
capacitor; note 1
30 pF, 500 V
C5, C14
film dielectric trimmer
4 to 40 pF
2222 809 08002
C6, C10
multilayer ceramic chip
capacitor
470 nF, 50 V
2222 856 48474
C7, C15
multilayer ceramic chip
capacitor
680 pF, 50 V
2222 852 13681
C8, C9
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
placed 6.4 mm from
transistor edge
C11, C12
multilayer ceramic chip
capacitor; note 1
43 pF, 500 V
placed 10 mm from
transistor edge
C13
multilayer ceramic chip
capacitor; note 1
39 pF, 500 V
C16
multilayer ceramic chip
capacitor; note 1
3.3 pF, 500 V
C17
film dielectric trimmer
1.4 to 5.5 pF
L1
2 turns of 1.6 mm enamelled
Cu wire
int. diameter 4.5 mm
length 4 mm
leads 2 × 4 mm
L2
3 turns of 1 mm closely
wound enamelled Cu wire
int. diameter 5 mm
leads 2 × 7 mm
L3
stripline; note 2
L4
2 turns of 1 mm closely
wound enamelled Cu wire
L5
stripline; note 2
L6
2 turns of 1.6 mm enamelled
Cu wire
R1
carbon resistor
30 Ω
2222 809 09003
2222 809 09001
6 mm × 47.8 mm
int. diameter 5 mm
leads 2 × 8 mm
30 Ω
6 mm × 42.9 mm
int. diameter 4 mm
length 4 mm
leads 2 × 3 mm
10 Ω
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16".
1996 Oct 10
13
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
150
handbook, full pagewidth
rivets
rivets
57
rivets
rivets
+VBB
+VCC
C10
C3
C6
C17
C15
C7
R1
50 Ω
input
C4
C1
C2
L4
L2
C8
L1
C13
C11
L3
L5
C18
L6
C16
C12
C9
50 Ω
output
C5
C14
MGG151
Dimensions in mm.
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections
are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the
copper on the component side and the ground-plane.
Fig.17 Component layout and printed-circuit board for 224.25 MHz class-AB test circuit.
1996 Oct 10
14
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG140
MGG139
75
15
100
PL
handbook, halfpage
handbook, halfpage
ηc
(W)
80
ηc
(%)
Gp
(dB)
Gp
60
50
10
40
20
5
0
0
2
4
6
PS (W)
0
8
50
PL (W)
25
100
VCE = 28 V; IC(ZS) = 0.2 A; Th = 70 °C; fvision = 224.25 MHz.
VCE = 28 V; IC(ZS) = 0.2 A; Th = 70 °C; fvision = 224.25 MHz.
Fig.18 Load power as a function of source power;
typical values.
Fig.19 Power gain and efficiency as functions of
load power; typical values.
Ruggedness in class-AB operation
The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR ≤2 through all phases) up to
60 W (RMS) and 85 W (PEP) under the following conditions:VCE = 28 V; Th = 70 °C; f = 224.25 MHz; Rth mb-h = 0.2 K/W.
1996 Oct 10
15
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG141
Zi
(Ω)
MGG142
4
1
handbook, halfpage
handbook, halfpage
ZL
(Ω)
ri
RL
xi
2
0
XL
−1
50
150
f (MHz)
0
50
250
150
f (MHz)
250
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Fig.20 Input impedance as a function of frequency
(series components); typical values.
Fig.21 Load impedance as a function of frequency
(series components); typical values.
MGG143
20
handbook, halfpage
Gp
(dB)
10
0
50
150
f (MHz)
250
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Fig.22 Power gain as a function of frequency;
typical values.
1996 Oct 10
16
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
PACKAGE OUTLINE
22 max
handbook, full pagewidth
6.35
0.14
4
min
ceramic
1
2
3
4
5
6
5.7
5.3
6.48
12.96
5.5
5.0
25.2
max 18.42
3.8
min
13
max
5.7
5.3
BeO
metal
3.35 (2x)
3.04
MBC877
12.2
2.5
4.50
4.05
7.5
max
Dimensions in mm.
Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Recommended screw: cheese-head 4-40 UNC/2A.
Heatsink compound must be applied sparingly and evenly distributed.
Fig.23 SOT119A.
1996 Oct 10
17
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 10
18
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
NOTES
1996 Oct 10
19
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France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 247 9145, Fax. +7 095 247 9144
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1996
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127041/1200/01/pp20
Date of release: 1996 Oct 10
Document order number:
9397 750 01036