APT100GN60B2(G)
600V
TYPICAL PERFORMANCE CURVES
APT100GN60B2
APT100GN60B2G*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
®
®
T-Max
G
C
E
• 600V Field Stop
•
•
•
•
Trench Gate: Low VCE(on)
Easy Paralleling
6µs Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT100GN60B2(G)
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
8
@ TC = 25°C
229
I C2
Continuous Collector Current
8
@ TC = 110°C
135
I CM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
1
UNIT
Volts
Amps
300
300A @ 600V
Switching Safe Operating Area @ TJ = 175°C
625
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
-55 to 175
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
TYP
MAX
5.0
5.8
6.5
1.05
1.45
1.85
25
2
600
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Volts
1.87
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Units
nA
Ω
10-2005
MIN
Rev A
Characteristic / Test Conditions
050-7621
Symbol
APT100GN60B2(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
SCSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
200
Gate Charge
9.5
VGE = 15V
600
VGE =
µs
VCC = 400V
65
55
RG = 1.0Ω 7
4750
TJ = +25°C
2675
Turn-on Delay Time
Inductive Switching (125°C)
31
VCC = 400V
65
Current Rise Time
Turn-off Delay Time
VGE = 15V
350
RG = 1.0Ω 7
85
5000
I C = 100A
Current Fall Time
44
Turn-on Switching Energy (Diode)
µJ
5095
6
Turn-on Switching Energy
ns
310
I C = 100A
Eon2
nC
6
VGE = 15V
Turn-on Switching Energy (Diode)
V
A
31
5
pF
300
Inductive Switching (25°C)
4
UNIT
340
7,
VCC = 600V, VGE = 15V,
Current Fall Time
MAX
45
TJ = 125°C, R G = 4.3Ω 7
Turn-off Delay Time
Turn-off Switching Energy
560
f = 1 MHz
15V, L = 100µH,VCE = 600V
Current Rise Time
Eon1
Eoff
VGE = 0V, VCE = 25V
TJ = 175°C, R G = 4.3Ω
Turn-on Delay Time
Turn-off Switching Energy
6000
I C = 100A
Short Circuit Safe Operating Area
TYP
Capacitance
VCE = 300V
Switching Safe Operating Area
Turn-on Switching Energy
MIN
55
TJ = +125°C
ns
6255
66
µJ
3300
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.21
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
050-7621
Rev A
10-2005
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8 Continuous current limited by package pin temperature to 100A.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
= 15V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
250
TJ = 175°C
200
TJ = 125°C
150
TJ = 25°C
100
TJ = -55°C
50
0
TJ = 25°C
TJ = 125°C
200
150
100
50
TJ = 175°C
0
0
200
11V
150
10V
100
9V
50
8V
7V
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250
TJ = -55°C
12V
250
0
5
10
15
20
25
30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
13V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
300
15V
300
J
VCE = 120V
12
VCE = 300V
10
VCE = 480V
8
6
4
2
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 100A
C
T = 25°C
14
0
100
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
IC = 200A
2.0
IC = 100A
1.5
IC = 50A
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE
1.05
700
3.0
IC = 200A
2.5
2.0
IC = 100A
1.5
IC = 50A
1.0
0.5
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75
100 125 150 175
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
300
1.15
1.10
600
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.0
200 300 400 500
GATE CHARGE (nC)
250
200
150
100
50
0
-50 -25
Lead Temperature
Limited
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
10-2005
GE
Rev A
V
APT100GN60B2(G)
350
050-7621
300
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
35
30
25
20
15
10
VCE = 400V
T = 25°C, or 125°C
5 RJ = 1.0Ω
G
0
L = 100µH
VCE = 400V
RG = 1.0Ω
L = 100µH
150
100
G
20
TJ = 125°C
10
5
TJ = 25°C
35
30
25
20
15
Eon2,100A
Eoff,200A
Eoff,100A
Eon2,50A
Eoff,50A
20
15
10
5
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
= 400V
V
CE
= +15V
V
GE
R = 1.0Ω
7
G
6
TJ = 125°C
5
4
3
2
TJ = 25°C
1
0
0 25 50 75 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (mJ)
Eon2,200A
J
5
TJ = 25°C, VGE = 15V
25
= 400V
V
CE
= +15V
V
GE
T = 125°C
10
40
0 25 50 75 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
0 25 50 75 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
40
60
0
0
45
80
8
V
= 400V
CE
V
= +15V
GE
R = 1.0Ω
15
TJ = 125°C, VGE = 15V
100
20
EOFF, TURN OFF ENERGY LOSS (mJ)
25
0
RG = 1.0Ω, L = 100µH, VCE = 400V
120
tf, FALL TIME (ns)
tr, RISE TIME (ns)
100
140
RG = 1.0Ω, L = 100µH, VCE = 400V
0 25 50 75 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
EON2, TURN ON ENERGY LOSS (mJ)
VGE =15V,TJ=25°C
200
250
0
SWITCHING ENERGY LOSSES (mJ)
VGE =15V,TJ=125°C
0 25 50 75 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
TJ = 25 or 125°C,VGE = 15V
10-2005
300
0
50
Rev A
400
25 50 75 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
0
200
050-7621
APT100GN60B2(G)
500
40
= 400V
V
CE
= +15V
V
GE
R = 1.0Ω
Eon2,200A
G
20
15
10
Eoff,200A
Eon2,100A
5
0
Eoff,100A
Eon2,50A
Eoff,50A
125
100
75
50
25
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
10,000
IC, COLLECTOR CURRENT (A)
Cies
P
C, CAPACITANCE ( F)
5,000
1,000
Coes
500
APT100GN60B2(G)
350
300
250
200
150
100
Cres
50
100
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.20
D = 0.9
0.7
0.15
0.5
Note:
0.10
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.25
0.3
0.05
0
t2
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
10-5
t1
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.116
0.244
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
10
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 400V
CE
R = 1.0Ω
4
10
G
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
30
50
70
90
110 130 150
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10-2005
0.00708
F
Rev A
0.949
Power
(watts)
50
050-7621
RC MODEL
Junction
temp. (°C)
FMAX, OPERATING FREQUENCY (kHz)
100
APT100GN60B2(G)
Gate Voltage
10%
APT100DQ60
TJ = 125°C
td(on)
tr
V CE
IC
V CC
Collector Current
90%
5%
5%
10%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
td(off)
TJ = 125°C
tf
Collector Voltage
90%
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
050-7621
Rev A
10-2005
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.