SUNMATE ESH1D Surface mount ultrafast plastic rectifier diode Datasheet

ESH1B - ESH1D
SURFACE MOUNT ULTRAFAST PLASTIC RECTIFIER DIODES
VOLTAGE RANGE: 100 - 200V
CURRENT: 1.0 A
Features
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Low profile package
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Ideal for automated placement
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Glass passivated chip junction
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Ultrafast recovery times for high efficiency
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Low forward voltage, low power loss
B
Mechanical Data
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SMA(DO-214AC)
A
Case: SMA(DO-214AC)Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Approx. Weight: SMA 0.064 grams
C
D
J
H
Maximum Ratings and Electrical Characteristics
G
E
Dim
Min
Max
A
2.29
2.92
B
4.00
4.60
C
1.27
1.63
D
0.15
0.31
E
4.80
5.59
G
0.10
0.20
H
0.76
1.52
J
2.01
2.62
All Dimensions in mm
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
ESH1B
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
ESH1C
ESH1D
Unit
VRRM
VRWM
VR
100
150
200
V
VR(RMS)
70
105
140
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage
@IF = 1.0A
VFM
0.90
V
@TA = 25°C
@TA = 100°C
IRM
1.0
25
µA
Reverse Recovery Time (Note 1)
trr
25
nS
Typical Junction Capacitance (Note 2)
Cj
25
pF
RJL
30
°C/W
Tj, TSTG
-65 to +150
°C
Average Rectified Output Current
Peak Reverse Current
At Rated DC Blocking Voltage
@TL = 120°C
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
1.2
1.0
0.8
0.6
TL Measured
at the Cathode Band Terminal
0.4
0.2
40
30
20
10
0
0
95
105
115
125
135
145
155
165
175
100
10
1
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
100
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Reverse Leakage
Current (µA)
TJ = 175 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
TJ = 125 °C
0.001
20
1
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 3. Typical Reverse Leakage Characteristics
Figure 5. Typical Junction Capacitance
100
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
10
TJ = 125 °C
10
TJ = 150 °C
1
TJ = 175 °C
TJ = 25 °C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
10
1
0.01
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 6. Typical Transient Thermal Impedance
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