Z ibo Seno Electronic Engineering Co., Ltd. ER1A – ER1J 1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Features ! ! ! ! ! ! ! Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss A Super-Fast Recovery Time F Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E SMA/DO-214AC Dim Min Max 2.50 2.90 A 4.00 4.60 B 1.20 1.60 C 0.152 0.305 D 4.80 5.28 E 2.00 2.44 F 0.051 0.203 G 0.76 1.52 H All Dimensions in mm Mechanical Data ! ! ! ! ! ! Case: SMA/DO-214AC, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) Lead Free: For RoHS / Lead Free Version Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TA=25°C unless otherwise specified Symbol ER1A ER1B ER1C ER1D ER1E ER1G ER1J Unit VRRM VRWM VR 50 100 150 200 300 400 600 V VR(RMS) 35 70 105 140 210 280 420 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM @TA = 25°C @TA = 100°C IRM 5.0 500 µA Reverse Recovery Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj 10 pF RJL 35 °C/W Tj, TSTG -65 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage @TL = 120°C D Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 0.95 1.25 1.7 V Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. ER1A – ER1J 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 1.00 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) ER1A – ER1J Single phase half wave Resistive or Inductive load 0.75 0.50 0.25 0 0 25 50 75 100 125 150 Tj = 25°C Pulse width = 300µs 10 ER1J 0.1 0.01 0 175 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 20 10 0.6 0.8 1.0 1.2 1.4 100 Tj = 25°C f = 1.0MHz 10 1 0 10 NUMBER OF CYCLES AT 60Hz Fig. 3 PeakForward Surge Current 0.4 100 Pulse width 8.3 ms single half-sine-wave (JEDEC method) 1 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics ( ° C) TL , LEAD TEMPERATURE Fig. 1 Forward Current Derating Curve 30 ER1E - ER1G ER1A - ER1D 1.0 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr 50Ω NI (Non-inductive) (-) 10Ω NI Device Under Test (+) +0.5A (-) 0A Pulse Generator (Note 2) 50V DC Approx 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit ER1A – ER1J 2 of 2 www.senocn.com Alldatasheet