Siemens BTS112 Tempfet (n channel enhancement mode temperature sensor with thyristor characteristic) Datasheet

TEMPFET
BTS 112A
Features
●
●
●
●
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electricalIy shorted to the tab
1
Pin
1
2
3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BTS 112A
60 V
12 A
0.15 Ω
TO-220AB
C67078-S5014-A3
2
3
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
60
V
Drain-gate voltage, RGS = 20 kΩ
VDGR
60
Gate-source voltage
VGS
± 20
Continuous drain current, TC = 33 °C
ID
12
ISO drain current
TC = 85 °C, VGS = 10 V, VDS = 0.5 V
ID-ISO
2.5
Pulsed drain current,
TC = 25 °C
ID puls
48
Short circuit current,
Tj = – 55 ... + 150 °C
ISC
27
Short circuit dissipation, Tj = – 55 ... + 150 °C
PSCmax
400
Power dissipation
Ptot
40
Operating and storage temperature range
Tj, Tstg
– 55 ... + 150
DIN humidity category, DIN 40 040
–
E
IEC climatic category, DIN IEC 68-1
–
55/150/56
Thermal resistance
Chip-case
Chip-ambient
Semiconductor Group
A
W
°C
–
K/W
Rth JC
Rth JA
1
≤ 3.1
≤ 75
04.97
BTS 112A
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
V(BR)DSS
Gate threshold voltage
VGS = VDS, ID = 1.0 mA
VGS(th)
Zero gate voltage drain current
VGS = 60 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
I DSS
Gate-source leakage current
VGS = ± 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
I GSS
Drain-source on-state resistance
VGS = 10 V, ID = 7.5 A
RDS(on)
V
60
–
–
2.5
3.0
3.5
µA
–
–
0.1
10
1.0
100
–
–
10
2
100
4
nA
µA
Ω
–
0.12
0.15
3.0
5.7
–
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × RDS(on)max, ID = 7.5 A
gfs
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Coss
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Crss
S
pF
–
360
480
–
160
250
–
50
90
Turn-on time ton, (ton = td(on) + tr)
td(on)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t
–
15
25
–
30
45
Turn-off time toff, (toff = td(off) + tf)
td(off)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t
–
40
55
–
55
75
r
f
Semiconductor Group
2
ns
BTS 112A
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous source current
IS
–
–
12
Pulsed source current
I SM
–
–
48
Diode forward on-voltage
I F = 24 A, VGS = 0
VSD
–
1.5
1.8
Reverse recovery time
I F = I S, diF/dt = 100 A/µs, VR = 30 V
t rr
–
60
–
Reverse recovery charge
I F = I S, diF/dt = 100 A/µs, VR = 30 V
Q rr
A
V
ns
µC
–
0.1
–
–
1.4
1.5
–
–
10
Temperature Sensor
Forward voltage
ITS(on) = 10 mA, Tj = – 55 ... + 150 °C
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C
VTS(on)
Forward current
Tj = – 55 ... + 150 °C
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C
ITS(on)
Holding current, VTS(off) = 5.0 V, Tj = 25 °C
Tj = 150 °C
IH
Switching temperature
VTS = 5.0 V
TTS(on)
Turn-off time
VTS = 5.0 V, ITS(on) = 2 mA
toff
Semiconductor Group
3
V
mA
–
–
10
–
–
600
0.05
0.05
0.1
0.2
0.5
0.3
150
–
–
0.5
–
2.5
°C
µs
BTS 112A
Examples for short-circuit protection
at Tj = – 55 ... + 150 °C, unless otherwise specified.
Parameter
Symbol
Examples
Unit
1
2
–
Drain-source voltage
VDS
15
30
–
Gate-source voltage
VGS
6.8
5.0
–
Short-circuit current
ISC
27
11
–
A
Short-circuit dissipation
PSC
400
330
–
W
Response time
Tj = 25 °C, before short circuit
tSC(off)
20
20
–
Short-circuit protection ISC = f (VDS)
Parameter: VGS
Diagram to determine ISC for Tj = – 55 ... +150°C
Semiconductor Group
ms
Max. gate voltage VGS(SC) = f (VDS)
Parameter: Tj = – 55 ... + 150 °C
4
V
BTS 112A
Max. power dissipation Ptot = f (TC)
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter: VGS
Typical output characteristics ID = f (VDS)
Parameter: tp = 80 µs
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC = 25 °C
Semiconductor Group
5
BTS 112A
Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID = 5 A, VGS = 10 V
Gate threshold voltage VGS(th) = f (Tj)
Parameter: VDS = VGS, ID = 1 mA
Typ. transfer characteristic
ID = f (VGS)
Parameter: tp = 80 µs, VDS = 25 V
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group
6
BTS 112A
Continuous drain current ID = f (TC)
Parameter: VGS ≥ – 10 V
Forward characteristics of reverse diode
IF = f (VSD)
Parameter: Tj, tp = 80 µs
Typ. gate-source leakage current
IGSS = f (TC)
Parameter: VGS = – 20 V, VDS = 0
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f = 1 MHz
Semiconductor Group
7
BTS 112A
Transient thermal impedance ZthJC = f (tp)
Parameter: D = tp/T
Semiconductor Group
8
BTS 112A
Package Outlines
TO 220 AB
Standard
TO 220 AB
SMD Version E 3045
Tape & reel E 3045 A
4.4
3.7
1.3
15.6
9.2
17.5
1)
2)
13.5
3)
4.6
1
12.8
2.8
9.9
9.5
Ordering Code
C67078-S5014-A3
0.75
2.54
1.05
2.54
0.5
2.4
GPT05155
1) punch direction, burr max. 0.04
2) dip tinning
3) max. 14.5 by dip tinning press burr max. 0.05
Semiconductor Group
9
Ordering Code
C67078-S5014-A4
C67078-S5014-A5
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