RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits. Complementary to the RN1112MFV and RN1113MFV 0.22±0.05 0.32±0.05 0.8±0.05 0.4 z z 1.2±0.05 1 0.4 Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. 0.8±0.05 z Ultra-small package, suited to very high density mounting 1.2±0.05 z Unit: mm 2 3 0.5±0.05 0.13±0.05 Equivalent Circuit VESM 1. BASE 2. EMITTER 3. COLLECTOR Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA PC(Note 1) 150 mW Tj 150 °C Tstg −55 to 150 °C Collector current Collector power dissipation Junction temperature Storage temperature range JEDEC ― JEITA ― TOSHIBA 2-1L1A Weight: 1.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) Land Pattern Example Unit:mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 1 2010-05-21 RN2112MFV,RN2113MFV Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cutoff current ICBO ― Emitter cutoff current IEBO DC current gain Characteristic Collector-emitter saturation voltage Collector output capacitance Input resistor RN2112MFV RN2113MFV Test Condition Min Typ. Max Unit VCB = −50 V, IE = 0 ― ― −100 nA ― VEB = −5 V, IC = 0 ― ― −100 nA hFE ― VCE = −5 V, IC = −1 mA 120 ― 400 ― VCE (sat) ― IC = −5 mA, IB = −0.5 mA ― −0.1 −0.3 V Cob ― VCB = −10 V, IE = 0, f = 1 MHz ― 0.9 ― pF R1 ― ― 15.4 22 28.6 32.9 47 61.1 2 kΩ 2010-05-21 RN2112MFV,RN2113MFV RN2112MFV RN2112MFV RN2113MFV RN2113MFV 3 2010-05-21 RN2112MFV,RN2113MFV RN2112MFV RN2112MFV RN2113MFV RN2113MFV (mA) (mA) 4 2010-05-21 RN2112MFV,RN2113MFV Marking Type Name Marking RN2112MFV RN2113MFV 5 2010-05-21 RN2112MFV,RN2113MFV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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