BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUL58D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V V CES Collector-Emitter Voltage (V BE = 0) 800 V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) 9 V 8 A 16 A IC I CM Collector Current Collector Peak Current (tp < 5 ms) Base Current 4 A I BM Base Peak Current (t p < 5 ms) 8 A P t ot Total Dissipation at T c = 25 o C 85 IB T stg Tj St orage Temperature Max. Operating Junction Temperature September 1997 W -65 to 150 o C 150 o C 1/6 BUL58D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.47 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it 200 500 µA µA 200 µA I CES Collector Cut-off Current (V BE = 0) V CE = 800 V V CEO = 800 V I CEO Collector Cut-off Current (IB = 0) V CE = 450 V Collector-Emitter Sustaining Voltage I C = 100 mA Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 4 A IC = 5 A IB = 0.8 A IB = 1 A 1.5 2 V V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 4 A IC = 5 A IB = 0.8 A IB = 1 A 1.3 1.5 V V DC Current G ain I C = 5 A VCE = 5 V I C = 500 mA V CE = 5 V 1.8 180 µs ns V CEO(sus) V EBO h FE∗ T j = 125 o C L = 25 mH V 9 V 5 38 ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 2 A V BE(of f) = -5 V V CL = 250 V IB1 = 0.4 A R BB = 0 Ω L = 200 µH 1 90 ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 2 A V BE(of f) = -5 V V CL = 250 V o T j = 125 C IB1 = 0.4 A R BB = 0 Ω L = 200 µH 1.5 180 Vf Diode Forward Voltage IC = 3 A Safe Operating Areas µs ns 3 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 450 Derating Curve V BUL58D DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL58D Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL58D TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 BUL58D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6