Kexin BCX42 Pnp silicon af an swiching transistor Datasheet

Transistors
SMD Type
PNP Silicon AF an Swiching Transistors
BCX42
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
High breakdown voltage
1
Low collector-emitter saturation voltage
0.55
For general AF applications
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
125
V
Collector-emitter voltage
VCEO
125
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Peak collector current
ICM
1
A
IB
100
mA
Peak base current
IBM
200
mA
Total power dissipation
mW
Base current
Ptot
330
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Junction - soldering point
RthJS
215
K/W
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1
Transistors
SMD Type
BCX42
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
V(BR)CEO
IC = 10 mA, IB = 0
125
V
Collector-base breakdown voltage
V(BR)CBO
IC = 100 ìA, IB = 0
125
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 ìA, IC = 0
5
V
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector cutoff current
ICEO
DC current gain *
hFE
VCB = 100 V, IE = 0
100
nA
VCB = 100 V, IE = 0 , TA = 150
20
ìA
VEB = 4 V, IC = 0
100
nA
VCE = 100 V , TA = 85
10
ìA
VCE = 100 V , TA = 125
75
ìA
IC = 100 ìA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
25
63
40
Collector-emitter saturation voltage *
VCE(sat)
IC = 300 mA, IB = 30 mA
0.9
V
Base-emitter saturation voltage
VBE(sat)
IC = 300 mA, IB = 30 mA
1.4
V
Transition frequency
* Pulse test: t
Ccb
300ìs, D = 2%.
Marking
Marking
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*
fT
Collector-base capacitance
2
Testconditons
Collector-emitter breakdown voltage
DKs
IC = 20 mA, VCE = 5 V, f = 20 MHz
150
MHz
VCB = 10 V, f = 1 MHz
12
pF
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