NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMN2075U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Input Capacitance Case Material: Molded Plastic, ―Green‖ Molding Compound. Fast Switching Speed Low Input/Output Leakage Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Qualified to AEC-Q101 Standards for High Reliability Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) UL Flammability Classification Rating 94V-0 D D G Top View S G S Top View Internal Schematic Ordering Information (Note 4) Part Number DMN2075U-7 Notes: Case SOT23 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information YM G22 Date Code Key Year 2009 Code W Month Code ~ ~ Jan 1 2017 E Feb 2 DMN2075U Document number: DS31837 Rev. 7 - 3 G22 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: E = 2017) M = Month (ex: 9 = September) Mar 3 2018 F Apr 4 2019 G May 5 2020 H Jun 6 1 of 6 www.diodes.com 2021 I Jul 7 2022 J Aug 8 2023 K Sep 9 Oct O 2024 L Nov N 2025 M Dec D September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMN2075U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Unit V V IS IDM ISM Value 20 ±8 4.2 3.4 1.2 27 24 Symbol PD RθJA TJ, TSTG Value 0.8 156 -55 to +150 Unit W °C/W °C TA = +25°C Steady State TA = +70°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) Pulsed Body Diode Forward Current (Note 6) Continuous Drain Current (Note 5) ID A A A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 — — — — — — 100 ±100 V nA nA VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) 0.4 — 1.0 V RDS(ON) — 25 30 38 45 mΩ |YFS| VSD — — 13 0.75 — 1.0 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.6A VGS = 0V, IS = 1A CISS COSS CRSS Rg QG QGS QGD tD(ON) tR tD(OFF) tF — — — — — — — — — — — 594.3 64.5 57.7 1.5 7.0 0.9 1.4 7.4 9.8 28.1 6.7 — — — — — — — — — — — pF pF pF Ω nC nC nC ns ns ns ns VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 3.6A VDD = 10V, VGS = 4.5V, RL = 2.78Ω, Rg = 1.0Ω 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2075U Document number: DS31837 Rev. 7 - 3 2 of 6 www.diodes.com September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U 10 DMN2075U 10 VGS = 8.0V VGS = 4.5V VGS = 3.0V VDS = 5V 8 VGS = 2.5V )A ( T N E 6 R R U C N IA 4 R D ,D I 2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = 2.0V VGS = 1.5V 6 4 2 TA = 150°C TA = 125°C TA = 85°C VGS = 1.2V 0 3 0 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N ) 0.055 0.05 0.045 0.04 VGS = 1.8V 0.035 0.03 VGS = 2.5V 0.025 VGS = 4.5V O (S D R 0.02 0.1 1 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.4 VGS = 2.5V ID = 5A VGS = 4.5V ID = 10A 0.8 0.6 -50 0.055 0.05 0.045 TA = 150°C 0.04 Document number: DS31837 Rev. 7 - 3 T A = 125°C 0.035 TA = 85°C 0.03 T A = 25°C 0.025 0.02 TA = -55°C 0.015 0.01 2 4 6 8 10 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.06 0.05 VGS = 2.5V ID = 5A 0.04 0.03 VGS = 4.5V ID = 10A 0.02 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (癈 ) (°C) Fig. 5 On-Resistance Variation with Temperature DMN2075U VGS = 4.5V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 1.0 2 0.06 10 1.8 1.2 0.5 1 1.5 VGS , GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = -55°C 0 0 TA = 25°C 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 (°C) TJ, JUNCTION TEMPERATURE (癈 ) Fig. 6 On-Resistance Variation with Temperature September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U 10 1.4 T (S G V 1.2 8 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) )V ( E G A T L O V D L O H S E R H T E T A G , )H DMN2075U 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 6 25癈 A =C TA =T25° 4 2 0.2 0 0 -50 0 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10000 T A = 150°C I D SS, DRAIN-SOURCE LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) 1000 100 Coss Crss T A = 125°C 100 T A = 85°C T A = 25°C 10 TA = -55°C f = 1MHz 1 10 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0 20 2 4 6 8 10 12 14 16 18 20 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA 157°C/W RJA = 157癈 /W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response DMN2075U Document number: DS31837 Rev. 7 - 3 4 of 6 www.diodes.com September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMN2075U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMN2075U Document number: DS31837 Rev. 7 - 3 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMN2075U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMN2075U Document number: DS31837 Rev. 7 - 3 6 of 6 www.diodes.com September 2017 © Diodes Incorporated