EMT2 / EMT3 / UMT2N / IMT2A / IMT3A Transistors General purpose (dual transistors) EMT2 / EMT3 / UMT2N / IMT2A / IMT3A !External dimensions (Units : mm) !Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (4) (5) (3) (6) IMT3A (2) (1) (4) (1) 1.2 1.6 (5) 0.5 EMT3 IMT2A (1) (2) (6) 0.13 EMT2 / UMT2N (3) (5) !Equivalent circuits 0.5 0.5 1.0 1.6 EMT2 / EMT3 (6) Each lead has same dimensions ROHM : EMT6 UMT2N (1) (2) (6) (1) (5) 0.2 !Absolute maximum ratings (Ta=25°C) Limits Unit 1.25 Collector-base voltage VCBO −60 V 2.1 Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V IC 150 mA EMT2 / EMT3 / UMT2N 150(TOTAL) PC mW 300(TOTAL) IMT2A / IMT3A Junction temperature Storage temperature Tj 150 °C Tstg −55~+150 °C 0.7 0.1Min. ∗1 Each lead has same dimensions ∗2 ROHM : UMT6 EIAJ : SC-88 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Type EMT2 EMT3 UMT2N IMT2A IMT3A Package EMT6 EMT6 UMT6 SMT6 SMT6 Marking Code T2 T2R T3 T2R T2 TR T2 T108 T3 T108 0.15 (2) (4) (3) (5) 0.3 !Package, marking, and packaging specifications 8000 8000 3000 3000 3000 0.3Min. 1.6 1.1 0.8 2.8 0~0.1 Basic ordering unit (pieces) (1) IMT2A / IMT3A (6) Collector power dissipation 0~0.1 Collector current 0.15 Symbol Parameter 1.3 (2) 2.0 (3) 0.9 (6) 0.65 (5) 0.65 (4) (1) (3) (3) (2) 0.95 0.95 1.9 2.9 (6) (4) (4) (5) Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −60 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO −6 − − − − −0.1 V µA IE=−50µA VCB=−60V VEB=−6V Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio IEBO − − −0.1 µA VCE(sat) − − −0.5 V IC/IB=−50mA/−5mA hFE 120 − 560 − VCE=−6V, IC=−1mA Transition frequency fT − 140 − MHz Output capacitance Cob − 4 5 pF ∗Transition frequency of the device. Conditions VCE=−12V, IE=2mA, f=100MHz VCE=−12V, IE=0A, f=1MHz ∗