CES521 Schottky Barrier Diode Silicon Epitaxial CES521 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.5 V (max). (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit 1: Cathode 2: Anode ESC ) 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 25 Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM 300 mA Average rectified current IO 200 IFSM (Note 1) 1 A Power dissipation PD (Note 2) 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to 125 Operating temperature Topr -40 to 100 Non-repetitive peak forward surge current Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Measured with a 10ms pulse. Note 2: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm. 1 2012-05-24 Rev.5.0 CES521 ) 5. Electrical Characteristics (Unless otherwise specified, Ta = 25 25 Characteristics Symbol Forward voltage Reverse current Total capacitance Note Test Condition Min Typ. Max Unit V VF(1) IF = 1 mA 0.20 VF(2) IF = 5 mA 0.24 VF(3) IF = 200 mA 0.45 0.5 IR(1) VR = 10 V 20 IR(2) VR = 30 V 30 Ct VR = 0 V, f = 1 MHz 26 µA pF 6. Marking Fig. 6.1 Marking Marking Code Part Number RB CES521 7. Usage Considerations • Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. Land pattern dimensions for reference only Fig. 8.1 Land pattern dimensions for reference only (Unit: mm) 2 2012-05-24 Rev.5.0 CES521 9. Characteristics Curves (Note) Fig. 9.1 IF - VF Fig. 9.2 IR - VR Fig. 9.3 Ct - VR Note: The above characteristics curves are presented for reference only and not guaranteed by production test. 3 2012-05-24 Rev.5.0 CES521 Package Dimensions Unit: mm Weight: 1.4 mg (typ.) Package Name(s) Nickname: ESC 4 2012-05-24 Rev.5.0 CES521 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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