Diodes DMP2012SN P-channel enhancement mode mosfet Datasheet

DMP2012SN
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features




ID
RDS(on)
TA = +25°C
0.3Ω @ VGS= -4.5V
-0.9A
0.5Ω @ VGS= -2.5V
-0.7A
-20V
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.



ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data


Applications


DC-DC Converters
Power management functions
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed


Case: SC59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
Drain
SC59
D
Gate
S
G
Top View
ESD PROTECTED
Gate
Protection
Diode
Top View
Pin-Out
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP2012SN-7
Notes:
Compliance
Standard
Case
SC59
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2006
Code
T
Month
Code
Jan
1
2007
U
Feb
2
DMP2012SN
Document number: DS30790 Rev. 7 - 2
2008
V
Mar
3
2009
W
Apr
4
YM
PS1
PS1 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
2010
X
2011
Y
May
5
2012
Z
Jun
6
1 of 5
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2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep
9
2016
D
Oct
O
2017
E
Nov
N
2018
F
Dec
D
September 2013
© Diodes Incorporated
DMP2012SN
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Steady State
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
ID
IDM
Value
-20
12
-0.7
-2.8
Unit
V
V
A
A
Symbol
PD
RJA
TJ, TSTG
Value
500
250
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20






-10
10
V
µA
µA
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS(th)
-0.5
RDS (ON)

-1.2
0.30
0.50
V
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
|Yfs|
VSD



0.23
0.37
1.5
-0.8

-1.1
S
V
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -0.4A
VGS = -2.5V, ID = -0.4A
VDS = -10V, ID = -0.4A
VGS = 0V, IS = -0.7A
Ciss
Coss
Crss



178.5
26.3
18.8



pF
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
tD(ON)
tD(OFF)
tr
tf




10.4
175
22.3
64




ns
ns
ns
ns
VDD = -10V, ID = -0.4A,
VGS = -5.0V, RGEN = 50Ω
Notes:
Ω
Test Condition
5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMP2012SN
Document number: DS30790 Rev. 7 - 2
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© Diodes Incorporated
DMP2012SN
3.0
3.0
VGS = -10.0V
2.5
VGS = -5.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
2.5
VGS = -4.5V
2.0
VGS = -4.0V
VGS = -3.5V
VGS = -3.0V
1.5
VGS = -2.5V
VGS = -2.0V
1.0
VGS = -1.5V
0
0.5
1.0
1.5
2.0
2.5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
1.5
1.0
TA = 150C
0.45
0.40
0.35
0.30
VGS = -2.5V
0.20
VGS = -4.5V
0.15
VGS = -10V
0.10
0.05
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0.30
VGS = -2.5V
TA = 150C
0.25
T A = 125 C
T A = 85C
0.20
T A = 25C
0.15
TA = -55 C
0.10
0.05
0
0.5
1.0
1.5
2.0
2.5
-ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMP2012SN
Document number: DS30790 Rev. 7 - 2
3.0
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TA = 85C
T A = 25C
T A = -55C
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.50
0.25
TA = 125C
0
3.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
VGS = -1.2V
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
2.0
0.5
0.5
0
VDS = -10V
0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3.0
0.5
ID = -1.0A
0.4
ID = -1.5A
0.3
0.2
0.1
0
0
2
4
6
8
10
12
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.50
0.45
VGS = -2.5V
T A = 150 C
TA = 125C
0.40
0.35
TA = 85C
0.30
0.25
TA = 25C
0.20
TA = -55 C
0.15
0.10
0.05
0
0
0.5
1.0
1.5
2.0
2.5
-ID, DRAIN SOURCE CURRENT (A)
Figure 6 Typical On-Resistance vs.
Drain Current and Temperature
3.0
September 2013
© Diodes Incorporated
DMP2012SN
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.4
1.2
VGS = -2.5V
ID = -400mA
VGS = -4.5V
ID = -700mA
1.0
0.8
VGS = -2.5V
ID = -700mA
0.6
0.4
-50
0.4
VGS = -2.5V
ID = -400A
0.3
0.2
VGS = -2.5V
ID = -700A
VGS = -4.5V
ID = -700mA
0.1
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
1.5
1,000
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.5
1.0
-I D = 1mA
-ID = 250µA
0.5
Ciss
Coss
Crss
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 9 Gate Threshold Variation vs. Ambient Temperature
100
0
2
4
6
8 10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SC59
Min
Max
Typ
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
0.95
G
1.90
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
N
0.70
0.80
0.75
0°
8°

All Dimensions in mm
Dim
A
B C
G
H
K
J
DMP2012SN
Document number: DS30790 Rev. 7 - 2
M
N
D
L
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DMP2012SN
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
Dimensions Value (in mm)
Z
3.4
X
0.8
Y
1.0
2.4
C
1.35
E
C
X
E
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMP2012SN
Document number: DS30790 Rev. 7 - 2
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