DMP2012SN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features ID RDS(on) TA = +25°C 0.3Ω @ VGS= -4.5V -0.9A 0.5Ω @ VGS= -2.5V -0.7A -20V Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications DC-DC Converters Power management functions Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Case: SC59 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) Drain SC59 D Gate S G Top View ESD PROTECTED Gate Protection Diode Top View Pin-Out Source Equivalent Circuit Ordering Information (Note 4) Part Number DMP2012SN-7 Notes: Compliance Standard Case SC59 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year 2006 Code T Month Code Jan 1 2007 U Feb 2 DMP2012SN Document number: DS30790 Rev. 7 - 2 2008 V Mar 3 2009 W Apr 4 YM PS1 PS1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2010 X 2011 Y May 5 2012 Z Jun 6 1 of 5 www.diodes.com 2013 A Jul 7 2014 B Aug 8 2015 C Sep 9 2016 D Oct O 2017 E Nov N 2018 F Dec D September 2013 © Diodes Incorporated DMP2012SN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Steady State Pulsed Drain Current (Note 6) Symbol VDSS VGSS ID IDM Value -20 12 -0.7 -2.8 Unit V V A A Symbol PD RJA TJ, TSTG Value 500 250 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -10 10 V µA µA VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS(th) -0.5 RDS (ON) -1.2 0.30 0.50 V Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time |Yfs| VSD 0.23 0.37 1.5 -0.8 -1.1 S V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -0.4A VGS = -2.5V, ID = -0.4A VDS = -10V, ID = -0.4A VGS = 0V, IS = -0.7A Ciss Coss Crss 178.5 26.3 18.8 pF pF pF VDS = -10V, VGS = 0V f = 1.0MHz tD(ON) tD(OFF) tr tf 10.4 175 22.3 64 ns ns ns ns VDD = -10V, ID = -0.4A, VGS = -5.0V, RGEN = 50Ω Notes: Ω Test Condition 5. Device mounted on FR-4 PCB. 6. Pulse width 10µS, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. DMP2012SN Document number: DS30790 Rev. 7 - 2 2 of 5 www.diodes.com September 2013 © Diodes Incorporated DMP2012SN 3.0 3.0 VGS = -10.0V 2.5 VGS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 2.5 VGS = -4.5V 2.0 VGS = -4.0V VGS = -3.5V VGS = -3.0V 1.5 VGS = -2.5V VGS = -2.0V 1.0 VGS = -1.5V 0 0.5 1.0 1.5 2.0 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 1.5 1.0 TA = 150C 0.45 0.40 0.35 0.30 VGS = -2.5V 0.20 VGS = -4.5V 0.15 VGS = -10V 0.10 0.05 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 0.30 VGS = -2.5V TA = 150C 0.25 T A = 125 C T A = 85C 0.20 T A = 25C 0.15 TA = -55 C 0.10 0.05 0 0.5 1.0 1.5 2.0 2.5 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP2012SN Document number: DS30790 Rev. 7 - 2 3.0 3 of 5 www.diodes.com TA = 85C T A = 25C T A = -55C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.50 0.25 TA = 125C 0 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS = -1.2V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.0 0.5 0.5 0 VDS = -10V 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3.0 0.5 ID = -1.0A 0.4 ID = -1.5A 0.3 0.2 0.1 0 0 2 4 6 8 10 12 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 0.50 0.45 VGS = -2.5V T A = 150 C TA = 125C 0.40 0.35 TA = 85C 0.30 0.25 TA = 25C 0.20 TA = -55 C 0.15 0.10 0.05 0 0 0.5 1.0 1.5 2.0 2.5 -ID, DRAIN SOURCE CURRENT (A) Figure 6 Typical On-Resistance vs. Drain Current and Temperature 3.0 September 2013 © Diodes Incorporated DMP2012SN RDS(on), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 1.4 1.2 VGS = -2.5V ID = -400mA VGS = -4.5V ID = -700mA 1.0 0.8 VGS = -2.5V ID = -700mA 0.6 0.4 -50 0.4 VGS = -2.5V ID = -400A 0.3 0.2 VGS = -2.5V ID = -700A VGS = -4.5V ID = -700mA 0.1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 1.5 1,000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.5 1.0 -I D = 1mA -ID = 250µA 0.5 Ciss Coss Crss 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 9 Gate Threshold Variation vs. Ambient Temperature 100 0 2 4 6 8 10 12 14 16 18 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SC59 Min Max Typ 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° All Dimensions in mm Dim A B C G H K J DMP2012SN Document number: DS30790 Rev. 7 - 2 M N D L 4 of 5 www.diodes.com September 2013 © Diodes Incorporated DMP2012SN Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 2.4 C 1.35 E C X E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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