PD - 97536A
AUTOMOTIVE GRADE
Automotive DirectFET Power MOSFET
V(BR)DSS
100V
RDS(on) typ.
3.5mΩ
max.
4.4mΩ
ID (Silicon Limited)
114A
Qg
81nC
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
SC
M2
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
SB
AUIRF7669L2TR
AUIRF7669L2TR1
M4
L4
L6
L8
Description
The AUIRF7669L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7669L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Max.
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
IAR
EAR
TP
TJ
TSTG
f
e
f
g
c
c
h
100
± 20
114
81
19
375
460
100
3.3
260
850
See Fig.12a, 12b, 15, 16
260
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
e
j
k
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
fl
f
Typ.
Max.
Units
–––
12.5
20
–––
–––
45
–––
–––
1.2
0.5
°C/W
0.83
W/°C
HEXFET® is a registered trademark of International Rectifier.
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1
06/27/11
AUIRF7669L2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
100
–––
–––
0.08
–––
–––
–––
3.0
–––
90
–––
–––
–––
–––
–––
3.5
4.0
-13
–––
1.5
–––
–––
–––
–––
4.4
5.0
–––
–––
–––
5.0
250
100
-100
Units
Conditions
V
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 68A
V
VDS = VGS, ID = 250μA
i
mV/°C
VDS = 25V, ID = 68A
S
Ω
μA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Total Gate Charge
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
81
23
6.8
34
17.2
40.8
46
15
30
27
14
5660
1140
240
9250
660
1040
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
VDS = 50V, VGS = 10V
ID = 68A
nC
See Fig. 11
nC
VDS = 16V, VGS = 0V
VDD = 50V, VGS = 10V
ID = 68A
RG = 1.8Ω
ns
pF
i
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 80V, f=1.0MHz
VGS = 0V, VDS = 0V to 80V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
g
Surface mounted on 1 in. square Cu
(still air).
Min.
–––
Typ.
–––
Max.
114
–––
–––
460
–––
–––
–––
–––
61
140
1.3
92
210
Units
A
Mounted to a PCB with small
clip heatsink (still air)
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS = 68A, VGS = 0V
IF = 68A, VDD = 50V
i
di/dt = 100A/μs
i
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes through are on page 10
2
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AUIRF7669L2TR/TR1
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
DFET2
MSL1
Class M4
AEC-Q101-002
ESD
Human Body Model
Class H2
AEC-Q101-001
Charged Device
Model
Class C4
AEC-Q101-005
RoHS Compliant
Yes
http://www.irf.com
Qualification standards can be found at International Rectifiers web site:
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7669L2TR/TR1
1000
1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.8V
5.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
10
TOP
100
1
5.5V
0.1
ID, Drain-to-Source Current (A)
TOP
≤60μs PULSE WIDTH
BOTTOM
5.5V
10
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.01
1
0.1
1
10
100
1000
0.1
1
V DS, Drain-to-Source Voltage (V)
10
8
T J = 125°C
6
4
T J = 25°C
0
10
15
20
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on) , Drain-to -Source On Resistance (mΩ)
ID = 68A
5
1000
4.0
Vgs = 10V
3.8
3.6
3.4
3.2
0
50
100
150
200
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 3. Typical On-Resistance vs. Gate Voltage
Fig 4. Typical On-Resistance vs. Drain Current
1000
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
Fig 2. Typical Output Characteristics
12
2
10
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = -40°C
T J = 25°C
100
T J = 175°C
10
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
ID = 68A
VGS = 10V
2.0
1.5
1.0
0.5
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.8V
5.5V
10
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRF7669L2TR/TR1
1000
6.0
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
VGS = 0V
5.0
4.0
3.0
ID = 250μA
ID = 1.0mA
2.0
ID = 1.0A
T J = -40°C
T J = 25°C
100
T J = 175°C
10
1.0
1.0
-75 -50 -25
0
0.0
25 50 75 100 125 150 175
Fig 7. Typical Threshold Voltage vs.
Junction Temperature
100000
0.6
0.8
1.0
1.2
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
TJ = 25°C
C oss = C ds + C gd
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
0.4
Fig 8. Typical Source-Drain Diode Forward Voltage
250
200
0.2
VSD, Source-to-Drain Voltage (V)
TJ , Temperature ( °C )
150
T J = 175°C
100
50
10000
Ciss
Coss
1000
Crss
V DS = 10V
20μs PULSE WIDTH
100
0
0
25
50
75
1
100 125 150 175 200
10
100
VDS, Drain-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
14.0
120
12.0
100
VDS= 80V
VDS= 50V
10.0
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
ID= 68A
VDS= 20V
8.0
6.0
4.0
80
60
40
20
2.0
0.0
0
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
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25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
5
AUIRF7669L2TR/TR1
1200
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
1000
100μsec
1msec
10msec
100
ID
12A
19A
BOTTOM 68A
TOP
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
800
600
400
200
1
0
0
1
10
100
1000
25
VDS, Drain-to-Source Voltage (V)
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
τ4
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
Ri (°C/W)
R4
R4
τ4
τi (sec)
0.1080
0.000171
0.6140
0.053914
0.4520
0.006099
1.47e-05
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs.Pulsewidth
6
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AUIRF7669L2TR/TR1
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 68A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 17. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
- VDD
IAS
VGS
20V
A
0.01Ω
tp
I AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
S
Vgs(th)
Qgodr
VGS
RG
RD
VDS
90%
D.U.T.
+
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 20a. Switching Time Test Circuit
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Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
Fig 19a. Gate Charge Test Circuit
VDS
Qgd
VDD
10%
VGS
td(on)
tr
t d(off)
tf
Fig 20b. Switching Time Waveforms
7
AUIRF7669L2TR/TR1
Driver Gate Drive
D.U.T
P.W.
+
+
-
-
RG
*
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
VDD
**
P.W.
Period
***
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
Period
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
-
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Automotive DirectFET Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
S
S
S
S
S
S
G
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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AUIRF7669L2TR/TR1
Automotive DirectFET Outline Dimension, L8 Outline (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
M
P
R
METRIC
MIN MAX
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MIN
MAX
0.356
0.360
0.270
0.280
0.232
0.236
0.022
0.026
0.023
0.024
0.046
0.048
0.039
0.040
0.029
0.030
0.015
0.017
0.053
0.057
0.100
0.104
0.211
0.215
0.027
0.029
0.003
0.007
0.001
0.003
Automotive DirectFET Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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9
AUIRF7669L2TR/TR1
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as AUIRF7669L2TR). For 1000 parts on 7"
reel, order AUIRF7669L2TR1
REEL DIMENSIONS
TR1 OPTION (QTY 1000)
STANDARD OPTION (QTY 4000)
IMPERIAL
IMPERIAL
METRIC
METRIC
MIN
CODE
MIN
MAX
MIN
MIN
MAX
MAX
MAX
12.992
7.000
N.C
177.80
A
330.00
N.C
N.C
N.C
0.795
0.795
B
N.C
20.20
20.20
N.C
N.C
N.C
0.504
C
0.331
0.50
12.98
12.80
0.520
13.20
13.50
0.059
D
0.059
1.50
N.C
1.50
N.C
N.C
2.50
3.900
E
2.460
62.48
N.C
99.00 100.00
3.940
N.C
F
N.C
N.C
N.C
0.53
N.C
0.880
22.40
N.C
0.650
G
N.C
N.C
N.C
16.40
0.720
18.40
N.C
0.630
H
0.630
15.90
16.00
N.C
0.760
19.40
N.C
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MIN
MAX
MAX
4.69
11.90
0.476
12.10
0.154
3.90
0.161
4.10
0.623
15.90
0.642
16.30
0.291
7.40
0.299
7.60
0.283
7.20
0.291
7.40
0.390
9.90
0.398
10.10
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
10
Starting TJ = 25°C, L = 0.11mH, RG = 25Ω, IAS = 68A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
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AUIRF7669L2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to
make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer
specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms
and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
operating safeguards.
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express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not
responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in
other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a
situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized
application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the
design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and
manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and
agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the
Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet
such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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