Siemens BSM25GB120DN2 Igbt power module (half-bridge including fast free-wheeling diodes package with insulated metal base plate) Datasheet

BSM 25 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
VCE
IC
BSM 25 GB 120 DN2
1200V 38A
Package
Ordering Code
HALF-BRIDGE 1
C67076-A2109-A70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1200
Unit
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
38
TC = 80 °C
25
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
76
TC = 80 °C
50
Ptot
Power dissipation per IGBT
TC = 25 °C
W
200
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.6
Diode thermal resistance, chip case
RthJCD
≤1
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
1
+ 150
°C
-55 ... + 150
K/W
-
55 / 150 / 56
Mar-29-1996
BSM 25 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 1 mA
V
4.5
5.5
6.5
VGE = 15 V, IC = 25 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 25 A, Tj = 125 °C
-
3.1
3.7
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
0.5
0.8
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
2
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
nA
-
-
180
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 25 A
Input capacitance
10
nF
-
1.65
-
-
0.25
-
-
0.11
-
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Mar-29-1996
BSM 25 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 25 A
RGon = 47 Ω
Rise time
-
75
150
-
65
130
-
420
600
-
50
75
tr
VCC = 600 V, VGE = 15 V, IC = 25 A
RGon = 47 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 25 A
RGoff = 47 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 25 A
RGoff = 47 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 25 A, VGE = 0 V, Tj = 25 °C
-
2.3
2.8
IF = 25 A, VGE = 0 V, Tj = 125 °C
-
1.8
-
Reverse recovery time
trr
µs
IF = 25 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
-
0.13
-
Qrr
µC
IF = 25 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
-
2.3
-
Tj = 125 °C
-
6
-
Semiconductor Group
3
Mar-29-1996
BSM 25 GB 120 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
220
tp = 10.0µs
W
A
Ptot
180
IC
160
10 1
100 µs
140
120
100
1 ms
80
10
0
60
10 ms
40
20
0
0
DC
20
40
60
80
100
120
°C
10 -1
0
10
160
10
1
10
2
10
3
TC
V
VCE
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
45
A
K/W
IC
ZthJC
35
10 -1
30
25
D = 0.50
20
0.20
10
15
-2
0.10
0.05
0.02
10
0.01
single pulse
5
0
0
20
40
60
80
100
120
°C
160
TC
Semiconductor Group
10 -3
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Mar-29-1996
BSM 25 GB 120 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
IC
50
50
A
A
40
35
17V
15V
13V
11V
9V
7V
IC
40
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
1
2
3
V
0
0
5
VCE
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
50
A
IC
40
35
30
25
20
15
10
5
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
Mar-29-1996
BSM 25 GB 120 DN2
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 25 A
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
20
V
nF
VGE
16
C
Ciss
600 V
14
800 V
10 0
12
10
Coss
8
10 -1
Crss
6
4
2
0
0
20
40
60
80
100
120
10 -2
0
140 nC 170
5
10
15
20
25
30
V
40
VCE
QGate
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH
2.5
12
ICpuls/IC
ICsc/IC
8
1.5
6
1.0
4
0.5
2
0.0
0
0
200
400
Semiconductor Group
600
800
1000 1200
V
1600
VCE
6
0
200
400
600
800
1000 1200
V
1600
VCE
Mar-29-1996
BSM 25 GB 120 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω
par.: VCE = 600 V, VGE = ± 15 V, IC = 25 A
10 3
t
10 3
tdoff
t
ns
tdoff
ns
tdon
10 2
10 2
tdon
tr
tr
tf
10 1
0
10
20
30
40
A
tf
10 1
0
60
20
40
60
80
100 120 140
IC
Ω
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω
par.: VCE = 600V, VGE = ± 15 V, IC = 25 A
Eon
10
10
mWs
E
mWs
8
E
8
7
7
6
6
5
5
Eoff
4
3
2
2
1
1
10
20
30
40
A
60
IC
Semiconductor Group
Eon
4
3
0
0
180
RG
0
0
Eoff
20
40
60
80
100 120 140
Ω
180
RG
7
Mar-29-1996
BSM 25 GB 120 DN2
Forward characteristics of fast recovery
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
reverse diode IF = f(VF)
parameter: Tj
10 1
50
A
IF
Diode
K/W
40
ZthJC
10 0
35
30
Tj=125°C
Tj=25°C
25
10 -1
D = 0.50
0.20
20
0.10
15
0.05
10 -2
0.02
10
single pulse
0.01
5
0
0.0
0.5
1.0
1.5
2.0
V
3.0
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
VF
Semiconductor Group
10 -3
-5
10
8
Mar-29-1996
BSM 25 GB 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 190 g
Semiconductor Group
9
Mar-29-1996
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