PNP Silicon AF Transistors BC 856 ... BC 860 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type Marking Ordering Code (tape and reel) BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 Q62702-C1761 Q62702-C1888 Q62702-C1889 1)For Pin Configuration 1 2 3 B E C Package1) SOT-23 detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 856 ... BC 860 Maximum Ratings Parameter Symbol Unit BC 856 Values BC 857 BC 860 BC 858 BC 859 Collector-emitter voltage VCE0 65 45 30 Collector-base voltage VCB0 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEB0 5 5 5 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA – 65 … + 150 Thermal Resistance Junction - ambient1) Rth JA ≤ 310 Junction - soldering point Rth JS ≤ 240 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BC 856 ... BC 860 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 65 45 30 – – – – – – 80 50 30 – – – – – – 80 50 30 – – – – – – 5 – – – – 1 – 15 4 DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 856 BC 857, BC 860 BC 858, BC 859 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA BC 856 BC 857, BC 860 BC 858, BC 859 V(BR)CB0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 856 BC 857, BC 860 BC 858, BC 859 V(BR)CES Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C ICB0 DC current gain IC = 10 µA, VCE = 5 V BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C IC = 2 mA, VCE = 5 V BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(on) 1)Pulse test: t ≤ 300 µs, D = 2 %. Semiconductor Group 3 V nA µA – – – – 140 250 480 – – – 125 220 420 180 290 520 250 475 800 – – 75 250 300 650 – – 700 850 – – 600 – 650 – 750 820 mV BC 856 ... BC 860 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT – 250 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3 – pF Input capacitance VCB = 0.5 V, f = 1 MHz Cibo – 8 – Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C h11e Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C h12e Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C h22e Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 30 Hz … 15 kHz BC 859 BC 860 BC 859 f = 1 kHz, ∆ f = 200 Hz BC 860 F Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz … 50 Hz BC 860 Vn Semiconductor Group kΩ – – – – – – 10– 4 – – – 1.5 2.0 3.0 – – – – – – – 200 330 600 – – – µS – – – 4 2.7 4.5 8.7 18 30 60 – – – dB – – – – 1.2 1.0 1.0 1.0 4 3 4 4 – – 0.110 µV BC 856 ... BC 860 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 856 ... BC 860 Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 856 ... BC 860 h parameter he = f (IC) normalized VCE = 5 V h parameter he = f (VCE) normalized IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, RS = 2 kΩ, VCE = 5 V Semiconductor Group 7 BC 856 ... BC 860 Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8