DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS(ON) max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • Mechanical Data • • Applications • • • • • General Purpose Interfacing Switch Power Management Functions 100% Unclamped Inductive Switch (UIS) test in production 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (approximate) Drain U-DFN2020-6 Type E Pin1 Gate Source Bottom View Equivalent Circuit Pin Out Bottom View Ordering Information (Note 4) Part Number DMN6040SFDE-7 DMN6040SFDE-13 Notes: Marking N8 N8 Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information N8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D August 2012 © Diodes Incorporated DMN6040SFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Value 60 ±20 5.3 4.1 ID A 6.5 5.1 30 2.5 14.2 10 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IDM IS IAR EAR A A A A mJ Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJC TJ, TSTG Value 0.66 0.42 189 132 2.03 1.31 61 43 9.3 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 ±100 V nA nA VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD ⎯ 30 35 4.5 0.7 3 38 47 ⎯ 1.2 V Static Drain-Source On-Resistance 1 ⎯ ⎯ ⎯ ⎯ VDS = VGS, ID = 250µA VGS = 10V, ID = 4.3A VGS = 4.5V, ID = 4A VDS = 10V, ID = 4.3A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1287 57 44 1.2 22.4 10.4 4.9 3.0 6.6 8.1 20.1 4.0 18 11.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 25V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 4.3A nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A nS nC IS = 4.3A, dI/dt = 100A/μs IS = 4.3A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 2 of 6 www.diodes.com August 2012 © Diodes Incorporated DMN6040SFDE 20 20 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 12 8 12 8 TA = 150°C TA = 125°C 4 4 TA = 85°C T A = 25°C 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.10 0.09 0.08 0.07 0.06 0.05 VGS = 4.5V 0.04 0.03 VGS = 10V 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 0.10 0.08 0.06 ID = 3.5A ID = 4.5A 0.04 0.02 20 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage 10 2.4 0.10 0.09 2.2 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION VDS = 5.0V TA = 150°C 0.08 0.07 TA = 125°C 0.06 0.05 T A = 85°C 0.04 TA = 25°C 0.03 0.02 TA = -55°C 0.01 VGS = 10V ID = 10A 2.0 1.8 1.6 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 0.4 0.2 0 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 20 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature August 2012 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 4.0 0.10 0.08 VGS = 4.5V ID = 500mA 0.06 0.04 VGS = 2.5V ID = 200mA 0.02 3.5 3.0 2.5 ID = 1mA 2.0 1.5 ID = 250µA 1.0 0.5 0 - 50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature CT, JUNCTION CAPACITANCE (pF) 20 IS, SOURCE CURRENT (V) 16 TA = 25°C 12 8 4 Ciss Coss Crss f = 1MHz 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 0 1.2 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 30 100 VDS = 30V ID = 4.3A -ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN6040SFDE RDS(on) Limited 10 1 DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C PW = 100µs TA = 25°C VGS = -12V Single Pulse DUT on 1 * MRP Board 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 25 0.01 0.1 4 of 6 www.diodes.com 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 August 2012 © Diodes Incorporated DMN6040SFDE D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 61°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 e b(6X) 5 of 6 www.diodes.com U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e — — 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225 Z — — 0.20 All Dimensions in mm August 2012 © Diodes Incorporated DMN6040SFDE Suggested Pad Layout ADVANCE INFORMATION Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Dimensions Y3 Y2 X2 Y1 X1 X (6x) C C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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