DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 (1) (3) 0.32±0.05 1.2±0.1 0∼0.1 0.15 + − 0.05 ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416 DAN202U / DAP202U DAN202K / DAP202K 2.9 + − 0.2 1.9 + − 0.2 + 0.1 0.9 − 0.2 1.1 + −0.1 0.8 + − 0.1 0.95 0.95 (4) 0∼0.1 (2) (3) + 0.05 0.15 − (All pins have the same dimensions) (2) ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 (1) DA227 + 0.1 0.4 − 0.05 0∼0.1 +0.1 0.15 − 0.06 (All pins have the same dimensions) 0.3∼0.6 + 0.1 2.1 − + 0.1 1.25 − (1) 0.6 2.8 + − 0.2 0.3 0.65 + 0.1 0.3 − (3) 0.55 + − 0.1 (All pins have the same dimensions) N DA227 0.7 + − 0.1 +0.1 0.2 −0.05 +0.1 0.3 −0.05 ROHM : VMD3 EIAJ : JEDEC : 0.65 P 0.5 0.5 0.13±0.05 + 0.1 1.3 − DAN222M DAN222 DAN202U DAN202K DAP222M DAP222 DAP202U DAP202K +0.1 0.2 − 0.05 0∼0.1 + 0.2 2.0 − zMarking 1.6+ −0.2 1.0+ −0.1 0.1Min. (2) 0.5±0.05 0.8 + − 0.1 0.40.4 0.22±0.05 1.6 + − 0.2 0.8±0.1 0.2 1.6 + −0.1 zConstruction Silicon epitaxial planar DAN222 / DAP222 DAN222M / DAP222M 0.1Min. zFeatures 1) Four types of packaging are available. 2) High speed. (trr=1.5ns Typ.) 3) Suitable for high packing density layout. 4) High reliability. zExternal dimensions (Unit : mm) 0.2±0.1 0.8±0.1 0.2±0.1 1.2±0.1 zApplication Ultra high speed switching ROHM : SMD3 EIAJ : SC - 59 JEDEC : SOT - 346 N20 +0.1 1.25− 0.6 +0.1 0.3− 0.65 +0.1 0.9− +0.1 0.2− 0.7 (4) 0∼0.1 (3) + 0.1 0.2 − 0.65 0.65 +0.1 1.3− + 0.05 0.15− 0.1Min. (2) +0.1 0.2− + 0.1 2.1− (1) + 0.1 1.25− (4) +0.2 2.0− ROHM : UMD4 EIAJ : SC - 82 JEDEC : SOT - 343 1/3 DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes zCircuits (1) (4) (2) (3) DA227 DAP202K DAP202U DAP222 DAP222M DAN202K DAN202U DAN222 DAN222M zAbsolute maximum ratings (Ta=25°C) Type Junction Storage Peak reverse DC reverse Peak forward Mean rectifying Surge current Power dissipation temperature temperature voltage voltage current current (1µs) (TOTAL) Tj (ºC) Tstg (ºC) VRM (V) VR (V) IFM (mA) IO (mA) Isurge (A) Pd(mW) P/N Type DAN202K 80 80 300 100 4 200 150 −55 to +150 DAP202K 80 80 300 100 4 200 150 −55 to +150 P DAN202U 80 80 300 100 4 200 150 −55 to +150 N DAP202U 80 80 300 100 4 200 150 −55 to +150 P DAN222 80 80 300 100 4 150 150 −55 to +150 N N DAP222 80 80 300 100 4 150 150 −55 to +150 P DAN222M 80 80 300 100 4 150 100 −55 to +150 N DAP222M 80 80 300 100 4 150 100 −55 to +150 P DA227 80 80 300 100 4 150 150 −55 to +150 N zElectrical characteristics (Ta=25°C) Type Forward voltage Reverse current Cond. Cond. VF (V) Max. IF (mA) IR (µA) Max. VR (V) Capacitance between terminals CT (pF) Max. Cond. VR (V) f (MHz) Reverse recovery time trr (ns) Max. Cond. VR (V) IF (mA) DAN202K 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP202K 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN202U 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP202U 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN222 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP222 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN222M 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP222M 1.2 100 0.1 70 3.5 6 1 4 6 5 DA227 1.2 100 0.1 70 3.5 6 1 4 6 5 2/3 DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes 125 1000 50 Ta=100ºC 100 75 50 25 25 50 75 100 125 10 5 2 1 0.5 0.2 0.1 0 150 Ta=85ºC 50ºC 25ºC 0ºC −30ºC 0.2 AMBIENT TEMPERATURE :Ta (ºC) 0.4 0.6 0.8 1.0 1.4 1.2 REVERSE CURRENT : IR (nA) 5 Ta=85ºC 50ºC 25ºC 0ºC −30ºC 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE : VF 1.6 1.4 (V) 10 75°C 100 50°C 10 25°C 1 0°C −25°C 0.1 0.01 0 10 20 30 40 50 60 30 40 50 70 80 f=1MHz 4 2 P Type N Type 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE : VR (V) Fig.6 Capacitance between terminals characteristics Fig.5 Reverse characteristics (N Type) 0.01µF 10 20 Fig.3 Reverse characteristics (P Type) REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics (N Type) D.U.T. VR=6V 9 8 5Ω PULSE GENERATOR OUTPUT 50Ω 7 50Ω SAMPLING OSCILLOSCOPE 6 5 4 e P Typ 3 2 N Type 1 0 0 INPUT 1 2 3 4 5 6 7 FORWARD CURRENT : IF 8 9 100ns 10 (mA) Fig.7 Reverse recovery time OUTPUT trr 0 IR REVERSE RECOVERY TIME : trr (ns) 0.1 0.1IR FORWARD CURRENT : IF (mA) 10 0.2 −25ºC REVERSE VOLTAGE : VR (V) Ta=100°C 1000 0.1 0 0ºC 1 Fig.2 Forward characteristics (P Type) 20 0.5 25ºC 0.01 0 1.6 50 1 50ºC 10 FORWARD VOLTAGE : VF (V) Fig.1 Power attenuation curve 2 75ºC 100 CAPACITANCE BETWEEN TERMINALS : CT (pF) 0 0 20 REVERSE CURRENT : IR (nA) FORWARD CURRENT : IF (mA) POWER DISSIPATION : Pd / Pd Max.(%) zElectrical characteristic curves (Ta=25°C) Fig.8 Reverse recovery time (trr) measurement circuit 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0