RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2119MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.22±0.05 z Reduce a quantity of parts and manufacturing process 0.4 1 0.4 0.8±0.05 2 3 0.5±0.05 Equivalent Circuit 0.8±0.05 1.2±0.05 z Complementary to RN1119MFV 1.2±0.05 VESM 0.32±0.05 z Simplify circuit design 0.13±0.05 z With built-in bias resistors 1.BASE 2.EMITTER 3.COLLECTOR Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA PC (Note1) 150 mW Tj 150 °C Tstg −55 to 150 °C Collector current Collector power dissipation Junction temperature Storage temperature range JEDEC ― JEITA ― TOSHIBA 2-1L1A Weight: 1.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) Land Pattern Sample (unit: mm) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 1 2009-04-17 RN2119MFV Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― Emitter cut-off current IEBO DC current gain Characteristic Min Typ. Max Unit VCB = −50V, IE = 0 ― ― −100 nA ― VEB = −5V, IC = 0 ― ― −100 nA hFE ― VCE = −5V, IC = −1mA 120 ― 400 VCE (sat) ― IC = −5mA, IB = −0.5mA ― −0.1 −0.3 V Collector output capacitance Cob ― VCB = −10V, IE = 0, f = 1MHz ― 0.7 ― pF Input resistor R1 ― 0.7 1.0 1.3 kΩ Collector-emitter saturation voltage Test Condition ― 2 2009-04-17 RN2119MFV IC - VI(ON) IC - VI(OFF) -10000 COMMON EMITTER VCE = -0.2V COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (mA) -100 -10 -25 Ta = 100°C 25 -1 -0.1 -0.1 COMMON EMITTER VCE = -5V -1000 Ta = 100°C -25 25 -100 -10 -1 -10 0-0 INPUT VOLTAGE VI(ON) ( V) hFE - IC -0.6 -0.8 -1 -1.2 -1.4 VCE(sat) - IC -1 25 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) ( V) Ta = 100°C DC CURRENT GAIN hFE -0.4 INPUT VOLTAGE VI(OFF) ( V) 1000 -25 100 10 COMMON EMITTER VCE = -5V 1 -0.1 -0.2 -1 -10 COMMON EMITTER IC/IB = 10 -0.1 Ta = 100°C 25 -25 -0.01 -0.1 -100 COLLECTOR CURRENT IC (mA) -1 -10 -100 COLLECTOR CURRENT IC (mA) 3 2009-04-17 RN2119MFV Type Name RN2119MFV Marking YZ 4 2009-04-17 RN2119MFV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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