EIC1010A-20 10.00-10.25 GHz 20-Watt Internally Matched Power FET ISSUED 07/03/2007 FEATURES • • • • • • • 10.00– 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics EIC1010A-20 .024 .945 .803 .079 MIN .079 MIN YYWW SN .315 .685 .617 .004 .168 .095 .055 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gain at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gain Flatness f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Power Added Efficiency at 1dB Compression VDS = 9 V, IDSQ ≈ 4000mA f = 10.00-10.25GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V VP Pinch-off Voltage VDS = 3 V, IDS = 140 mA RTH MIN TYP 41.5 42.5 dBm 5.5 6.5 dB UNITS ±0.5 dB 27 f = 10.00-10.25GHz 2 Thermal Resistance % 5500 6500 mA 14000 18000 mA -2.5 -4.0 1.4 Note: 1) Tested with 25 Ohm gate resistor. MAX 1.6 V o C/W 2) Overall Rth depends on case mounting. MAXIMUM RATING (Case Temperature 25 ºC) SYMBOL Notes: CHARACTERISTIC 1 2 ABSOLUTE CONTINUOUS VDS Drain to Source Voltage 15V 10 V VGS Gate to Source Voltage -5V -3.0 V IDS Drain Current IDSS 9400mA IGSF Forward Gate Current 3000mA 500 mA PIN Input Power 42.5 dBm @ 3dB compression PT Total Power Dissipation 110W 94 W TCH Channel Temperature 175°C 175°C TSTG Storage Temperature -65°C ~ 175°C -65°C ~ 175°C 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2007 EIC1010A-20 ISSUED 07/03/2007 10.00-10.25 GHz 20-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2007