AON7220 25V N-Channel MOSFET General Description Product Summary The AON7220 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 25V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3mΩ RDS(ON) (at VGS = 4.5V) < 4mΩ 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V 39 A 37 IDSM TA=70°C ±12 311 IDM TA=25°C Units V 50 ID TC=100°C Maximum 25 A 30 Avalanche Current C IAS, IAR 48 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 115 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: March 2011 6.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7220 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=10V, VDS=5V 311 VGS=10V, ID=20A TJ=125°C 100 nA 1.3 1.8 V 2.5 3 A 3.5 4.2 VGS=4.5V, ID=18A 3.2 4 gFS Forward Transconductance VDS=5V, ID=20A 160 VSD Diode Forward Voltage IS=1A,VGS=0V 0.66 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 25 VDS=25V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 1 V 50 A 2368 2961 3554 pF VGS=0V, VDS=12.5V, f=1MHz 686 981 1276 pF 19 66 113 pF VGS=0V, VDS=0V, f=1MHz 0.3 0.67 1.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 34 42.8 52 nC Qg(4.5V) Total Gate Charge 12 17.4 23 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=12.5V, ID=20A VGS=10V, VDS=12.5V, RL=0.625Ω, RGEN=3Ω 6 nC 3.6 nC 7.8 ns 2.5 ns 37.8 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 18.1 22 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 31 39.2 47 ns 3.8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: March 2011 www.aosmd.com Page 2 of 6 AON7220 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 10V VDS=5V 4.0V 80 60 3.5V 60 ID(A) ID (A) 80 40 40 3V 20 125°C 25°C 20 VGS=2.5V 0 0 0 1 2 3 4 5 0 6 8 2 3 4 5 6 Normalized On-Resistance 1.8 6 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 VGS=4.5V 2 VGS=10V VGS=10V ID=20A 1.6 1.4 17 VGS=4.5V 5 ID=18A 1.2 2 10 1.0 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 8 125°C 6 1.0E-01 25°C 1.0E-02 4 1.0E-03 2 1.0E-04 25°C 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: March 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7220 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 Capacitance (pF) VGS (Volts) 3000 VDS=12.5V ID=20A 8 6 4 Ciss 2500 2000 1500 Coss 1000 2 500 0 Crss 0 0 5 10 15 20 25 30 35 40 45 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 1ms 10.0 DC 10ms 1.0 TJ(Max)=150°C TC=25°C Power (W) ID (Amps) 10µs RDS(ON) limited 0.1 20 25 800 TJ(Max)=150°C TC=25°C 600 17 5 2 10 400 200 0.0 0 0.01 0.1 1 10 100 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 15 1000 1000.0 100.0 10 VDS (Volts) Figure 8: Capacitance Characteristics D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 0 10 Pulse Width (s) Figure 10: Single Pulse Power Rating18 Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: March 2011 www.aosmd.com Page 4 of 6 AON7220 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000.0 100.0 TA=150°C 10.0 TA=125°C 1.0 80 60 40 20 0 1 10 100 1000 0 25 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 150 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 30 17 5 2 10 100 20 10 10 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 150 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 40 0.1 0.01 PD Single Pulse 0.001 Ton T 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: March 2011 www.aosmd.com Page 5 of 6 AON7220 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: March 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6