BC846A,B / BC847A, B, C / BC848A, B, C TRANSISTOR (NPN) SOT-23 FEATURES Ideally suited for automatic insertion z For Switching and AF Amplifier Applications z 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Value Collector-Base Voltage V BC846 BC847 BC848 VCEO Units 80 50 30 Collector-Emitter Voltage V BC846 BC847 BC848 65 45 30 VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 0.1 A PC* Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC846A,B / BC847A, B, C / BC848A, B, C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage Test conditions BC847 Collector-emitter breakdown voltage VCBO IC= 10µA, IE=0 30 BC846 65 VCEO IC= 10mA, IB=0 VEBO Collector cut-off current ICBO VCB=30 V , IE=0 VCE=60 V , IB=0 ICEO VCE=45 V , IB=0 IEBO VEB=5 V , BC846A,847A,848A hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Collector output capacitance 6 IC=0 VCE= 5V, IC= 2mA BC847C,BC848C Transition frequency V V 0.1 μA 0.1 μA 0.1 μA VCE=30 V , IB=0 BC848 BC846B,847B,848B V 45 VCB=50 V , IE=0 BC848 Emitter cut-off current DC current gain IE= 10µA, IC=0 BC846 BC847 fT Cob 110 220 200 450 420 800 IC=100mA, IB= 5mA 0.5 V IC=100mA, IB= 5mA 1.1 V VCE= 5 V, IC= 10mA f=100MHz VCB=10V,f=1MHz 100 MHz 4.5 ２ JinYu semiconductor UNIT VCB=70 V , IE=0 BC846 BC847 MAX 30 BC848 Emitter-base breakdown voltage TYP 50 BC848 BC847 Collector cut-off current MIN 80 BC846 www.htsemi.com Ｄａｔｅ：２０１１／０５ pF BC846A,B / BC847A, B, C / BC848A, B, C Typical Characteristics ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC846A,B / BC847A, B, C / BC848A, B, C ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５