HTSEMI BC847A Transistor (npn) Datasheet

BC846A,B / BC847A, B, C / BC848A, B, C
TRANSISTOR (NPN)
SOT-23
FEATURES
Ideally suited for automatic insertion
z
For Switching and AF Amplifier Applications
z
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Collector-Base Voltage
V
BC846
BC847
BC848
VCEO
Units
80
50
30
Collector-Emitter Voltage
V
BC846
BC847
BC848
65
45
30
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current –Continuous
0.1
A
PC*
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65-150
℃
DEVICE MARKING
BC846A=1A; BC846B=1B;
BC847A=1E; BC847B=1F; BC847C=1G;
BC848A=1J; BC848B=1K: BC848C=1L
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
BC846A,B / BC847A, B, C / BC848A, B, C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Collector-base breakdown voltage
Test
conditions
BC847
Collector-emitter breakdown voltage
VCBO
IC= 10µA, IE=0
30
BC846
65
VCEO
IC= 10mA, IB=0
VEBO
Collector cut-off current
ICBO
VCB=30 V , IE=0
VCE=60 V , IB=0
ICEO
VCE=45 V , IB=0
IEBO
VEB=5 V ,
BC846A,847A,848A
hFE
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Collector output capacitance
6
IC=0
VCE= 5V,
IC= 2mA
BC847C,BC848C
Transition frequency
V
V
0.1
μA
0.1
μA
0.1
μA
VCE=30 V , IB=0
BC848
BC846B,847B,848B
V
45
VCB=50 V , IE=0
BC848
Emitter cut-off current
DC current gain
IE= 10µA, IC=0
BC846
BC847
fT
Cob
110
220
200
450
420
800
IC=100mA, IB= 5mA
0.5
V
IC=100mA, IB= 5mA
1.1
V
VCE= 5 V, IC= 10mA
f=100MHz
VCB=10V,f=1MHz
100
MHz
4.5
2
JinYu
semiconductor
UNIT
VCB=70 V , IE=0
BC846
BC847
MAX
30
BC848
Emitter-base breakdown voltage
TYP
50
BC848
BC847
Collector cut-off current
MIN
80
BC846
www.htsemi.com
Date:2011/05
pF
BC846A,B / BC847A, B, C / BC848A, B, C
Typical Characteristics
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
BC846A,B / BC847A, B, C / BC848A, B, C
4
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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