CMPD2005S CMPD2005SG* SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S and CMPD2005SG each contain two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability. MARKING CODES: CMPD2005S: DB5 CMPD2005SG*: 5SG * Device is Halogen Free by design MAXIMUM RATINGS: (TA=25 °C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR BVR VF VF VF CT trr SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 300 350 200 225 625 4.0 1.0 350 -65 to +150 357 UNITS V V mA mA mA A A mW °C °C/W CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VR=280V 100 VR=280V, TA=150°C 100 IR=100μA 350 IF=20mA 0.87 IF=100mA 1.0 IF=200mA 1.25 VR=0, f=1.0MHz 5.0 IR=IF=30mA, Rec. to 3.0mA, RL=100Ω 50 UNITS nA μA V V V V pF ns R3 (25-January 2010) CMPD2005S CMPD2005SG* SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODES: CMPD2005S: DB5 CMPD2005SG*: 5SG * Device is Halogen Free by design R3 (25-January 2010) w w w. c e n t r a l s e m i . c o m