AAT AAT8641F One-cell li-ion battery protection ic Datasheet

Advanced Analog Technology, Inc.
AAT8641 Series
Product information presented is current as of publication date. Details are subject to change without notice
ONE-CELL LI-ION BATTERY PROTECTION IC
FEATURES
GENERAL DESCRIPTION
z
Ideal for One-Cell Rechargeable Li-Ion
Battery Packs
z
High Accuracy Voltage Detection
z
Low Current Consumption:
The AAT8641 series are designed for the
protection of one-cell rechargeable Li-Ion battery
pack against over charge, over discharge, over
current and short circuit. They use CMOS
process to provide high accuracy voltage
detection while consuming relatively low amount
of current.
Each of the AAT8641 devices incorporates
voltage comparators, bandgap reference voltage
generator, signal delay circuit, short circuit
detector, and digital control circuit.
During the charge process, when the battery
voltage is charged to a value higher than VC1
3μA Supply Current (Typical)
0.1μA Shutdown Current
z
3-Level Over Current Detection:
Over-Current Level 1 /Over Current Level 2
/ Short Circuit
z
Wide Operating Temperature Range:
− 40
z
o
C to +85 oC
Small SOT25 Package
PIN CONFIGURATION
(Over Charge Threshold Voltage), the output of
C out pin switches to low level, i.e., the VN pin
level. The output of Cout pin will switch to high
level when the battery voltage is at a level lower
than VC 2 (Over Charge Release Voltage), or
TOP VIEW
COUT
VN
when the charger is disconnected from the battery
pack and the battery voltage level is in between
VC1 and VC 2 .
During the discharge process, when the battery
voltage drops to a value lower than VD1 (Over
D OUT
GND
Discharge Threshold Voltage), the output of
D out pin switches to low level immediately after
the internal delay time elapses. The output of
D out pin will switch to high level when the
battery voltage is at a level higher than VD 2
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 1 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
(Over-Discharge Release Voltage).
Over Current Level 1 Voltage ( VOC1 ) is used to
monitor the amount of discharge current. If the
discharge current is high enough to cause VN pin
voltage to be greater than VOC1 , the output of
D out pin will switch to low level after a delay
time tOC1. If the load is removed from battery
pack, the output of D out will change to high
exactly the same as discharge current. If the short
circuit current is high enough to cause VN pin
voltage to be greater than Vshort , the output of
D out pin would fall to low level after a delay
time t short , and the output of D out level will
change to high when the load is removed from
battery pack.
again.
The mechanism of short circuit protection is
BLOCK DIAGRAM:
Dout
C out
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 2 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
PIN DESCRIPTION
PIN NO
NAME
I/O
1
2
VN
VDD
I
I
Voltage Detection Pin Between VN and GND
Power Supply Input Pin
DESCRIPTION
3
4
GND
D out
O
Ground
Discharge Control Pin which Connects to External MOSFET Gate
5
C out
O
Charge Control Pin which Connects to External MOSFET Gate.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
SYMBOL
VALUE
UNIT
Supply Voltage
VDD
−0.3 to 8.0
V
VN Pin Input Voltage
VVN
VDD − 20.0 to VDD + 0.3
V
D out Pin Output Voltage
VDout
−0.3 to VDD + 0.3
V
C out Pin Output Voltage
VCout
VVN − 0.3 to VDD + 0.3
V
Power Dissipation
Pd
150
mW
Operating Temperature Range
TC
−40 to +85
o
C
Tstorage
−40 to +125
o
C
Storage Temperature Range
RECOMMENDED OPERATING CONDITIONS
Test condition
Voltage Defined as VDD
to GND
Supply Voltage, VDD
D out Output Voltage
C out Output Voltage
Min
Max
Unit
1.5
7.0
V
GND
VDD
V
VN
VDD
V
OPERATION VOLTAGE AND OPERATION CURRENT
Parameter
Supply Current at Normal Operation
Mode
Standby Current at Power Down Mode
Test Condition
VDD =3.3V; VN=0V; GND=0V
-
Operation Voltage between VDD and
VN
–
Min
Typ
Max
Unit
3.0
5.0
μA
-
0.1
μA
20.0
V
1.5
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 3 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641A DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
Min
Typ
Max
Unit
4.300
4.325
4.350
V
VC1 − 0.30 VC1 − 0.25 VC1 − 0.20
V
2.420
2.500
2.580
V
VD1+0.3
VD1+0.4
VD1+0.5
V
0.700
1.000
1.300
s
VDD = 3.6V to 2.4V
87.5
125.0
162.5
ms
130
150
170
mV
400
500
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
Over Current Level 1 Detection
Voltage
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with
t OC1 Delay Time)
Over Current Level 2 Detection
Voltage
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
Short Circuit Detection Voltage
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay
Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V;
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
VDD =1.8V;
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 4 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641B DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
TEST CONDITION
MIN
TYP
MAX
UNIT
4.325
4.350
4.375
V
VC1-0.25 VC1-0.20 VC1-0.15
2.220
2.300
2.380
V
V
VD1+0.6 VD1+0.7 VD1+0.8
V
0.088
0.125
0.163
s
VDD = 3.6V to 2.2V
22.4
32.0
41.6
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with
t OC1 Delay Time)
130
150
170
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
400
500
600
mV
VDD −1.3
VDD − 0.9
V
4.0
5.2
ms
2.0
2.0
2.6
3.4
ms
ms
10
50
μs
−2.0
−1.3
−0.6
V
1
2
10
kΩ
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage
VDD −1.7
( D out Response with t short Delay
Time)
VDD = 3.0V
2.8
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
Charger Detection Voltage
VCHR
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD 3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
2.5
5.0
10.0
kΩ
VDD =1.8V;
1.4
1.1
D out Low Level Resistance
R DOL
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 5 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641C DETECTION VOLTAGE AND DEALY TIME(25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
MIN
TYP
MAX
UNIT
4.275
4.300
4.325
V
VC1-0.25 VC1-0.20 VC1-0.15
V
2.220
2.300
2.380
V
VD1-0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with
t OC1 Delay Time)
80
100
120
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
400
480
600
mV
Short Circuit Detection Voltage
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage
VDD −1.7
( D out Response with t short Delay
Time)
VDD −1.3
VDD − 0.9
V
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
2.5
5.0
10.0
kΩ
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
VDD =1.8V;
D out Low Level Resistance
R DOL
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 6 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641D DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
MIN
TYP
MAX
UNIT
4.255
4.280
4.305
V
VC1-0.25
VC1-0.20
VC1-0.15
V
2.201
2.281
2.361
V
VD1-0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
VDD = 3.6V to 2.2V
87.5
125.0
162.5
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with
t OC1 Delay Time)
110
130
150
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response with
t OC 2 Delay Time)
400
490
600
mV
VDD −1.3
VDD − 0.9
V
Vshort
TEST CONDITION
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
VDD −1.7
Response with t short Delay Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
VDD =1.8V;
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 7 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641E DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
MIN
TYP
MAX
UNIT
4.255
4.280
4.305
V
VC1-0.25 VC1-0.20 VC1-0.15
2.201
VD1+0.5
2.281
2.361
VD1+0.6 VD1+0.7
V
V
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response
with t OC1 Delay Time)
80
100
120
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response with
t OC 2 Delay Time)
400
480
600
mV
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
VDD −1.7
VDD −1.3
VDD − 0.9
V
Response with t short Delay Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ” Pin
Voltage (when VD1＜VDD＜VD2)
VDD =3.5V; C out =3.0V;VN=0V
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
2.5
5.0
10.0
kΩ
VDD =1.8V;
D out Low Level Resistance
R DOL
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 8 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641F DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.4V
MIN
TYP
MAX
UNIT
4.300
4.325
4.350
V
VC1-0.30 VC1-0.25 VC1-0.20
2.420
VD1+0.3
2.500
2.580
VD1+0.4 VD1+0.5
V
V
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
VOC1
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC1 Delay Time)
80
100
120
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
400
480
600
mV
Short Circuit Detection Voltage
Vshort
VDD = 3.0V , Detect Rising
Edge of “VN” Pin Voltage
( D out Response with t short
Delay Time)
VDD −1.7
VDD −1.3
VDD − 0.9
V
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
−2.0
−1.3
−0.6
V
1
2
10
kΩ
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
Charger Detection Voltage
VCHR
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD
＜VD2)
VDD =3.5V;
C out Low Level Resistance
R COL
VDD =4.5V;
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V;
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
VDD =1.8V;
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 9 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641G DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
TEST CONDITION
MIN
TYP
MAX
UNIT
4.325
4.350
4.375
V
VC1-0.25 VC1-0.20 VC1-0.15
2.220
VD1+0.6
2.300
2.380
VD1+0.7 VD1+0.8
V
V
V
0.088
0.125
0.163
s
VDD = 3.6V to 2.2V
22.4
32.0
41.6
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with
t OC1 Delay Time)
180
200
220
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
400
510
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
2.8
4.0
5.2
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
VDD =1.8V;
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 10 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641H DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
TEST CONDITION
MIN
TYP
MAX
UNIT
4.275
4.300
4.325
V
VC1-0.25 VC1-0.20 VC1-0.15
V
2.220
2.300
2.380
V
VD1-0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
VDD = 3.6V to 2.2V
87.5
125.0
162.5
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with
t OC1 Delay Time)
130
150
170
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
400
500
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
VDD =1.8V; D out =0.5V;
VN=1.8V
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 11 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641I DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
TEST CONDITION
MIN
TYP
MAX
UNIT
4.275
4.300
4.325
V
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
V
2.220
2.300
2.380
V
VD1 − 0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
VDD = 3.6V to 2.2V
87.5
125.0
162.5
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with
t OC1 Delay Time)
110
130
150
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
400
490
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
VDD =1.8V;
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 12 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641J DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
TEST CONDITION
MIN
TYP
MAX
UNIT
4.255
4.280
4.305
V
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
V
2.201
2.281
2.361
V
VD1 − 0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
VDD = 3.6V to 2.2V
87.5
125.0
162.5
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with
t OC1 Delay Time)
180
200
220
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
400
510
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
5.6
8.0
10.4
ms
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
10
50
μs
−2.0
−1.3
−0.6
V
1
2
10
kΩ
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
Charger Detection Voltage
VCHR
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
VDD =1.8V;
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 13 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
AAT8641K DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 2 .8 V to 2.2V
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
MIN
TYP
MAX
UNIT
4.225
4.250
4.275
V
VC1-0.25
VC1-0.20
VC1-0.15
V
2.201
2.281
2.361
V
VD1+0.5
VD1+0.6
VD1+0.7
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
VOC1
Detect Rising Edge of “VN” Pin
Voltage ( D out Response
with t OC1 Delay Time)
80
100
120
mV
VOC 2
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with t OC 2 Delay Time)
400
480
600
mV
VDD −1.3
VDD − 0.9
V
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
VDD −1.7
Response with t short Delay Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
50
150
300
kΩ
–
VDD =1.8V;
D out =0.5V;VN=1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 14 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
SUMARY OF AAT8641 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
DEVICE
MIN
TYP
MAX
UNIT
VC1
AAT8641A
4.300
4.325
4.350
V
AAT8641B
4.325
4.350
4.375
V
AAT8641C
4.275
4.300
4.325
V
AAT8641D
4.255
4.280
4.305
V
AAT8641E
4.255
4.280
4.305
V
AAT8641F
4.300
4.325
4.350
V
AAT8641G
4.325
4.350
4.375
V
AAT8641H
4.275
4.30
4.325
V
AAT8641I
4.275
4.30
4.325
V
AAT8641J
4.255
4.280
4.305
V
AAT8641K
4.225
4.250
4.275
V
AAT8641A
VC1 − 0.30
VC1 − 0.25
VC1 − 0.20
V
AAT8641B
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641C
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641D
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641E
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641F
VC1 − 0.30
VC1-0.25
VC1 − 0.20
V
AAT8641G
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641H
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641I
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641J
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641K
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8641A
2.420
2.500
2.580
V
AAT8641B
2.220
2.300
2.380
V
AAT8641C
2.220
2.300
2.380
V
AAT8641D
2.201
2.281
2.361
V
AAT8641E
2.201
2.281
2.361
V
AAT8641F
2.420
2.500
2.580
V
AAT8641G
2.220
2.300
2.380
V
AAT8641H
2.220
2.300
2.380
V
AAT8641I
2.220
2.300
2.380
V
AAT8641J
2.201
2.281
2.361
V
AAT8641K
2.201
2.281
2.361
V
Over Charge Threshold Voltage
VC 2
Over Charge Release Voltage
VD1
Over Discharge Threshold
Voltage
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 15 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
SUMMARY OF AAT8641 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
DEVICE
MIN
TYP
MAX
UNIT
VD 2
AAT8641A
VD1+0.3
VD1+0.4
VD1+0.5
V
AAT8641B
VD1+0.6
VD1+0.7
VD1+0.8
V
AAT8641C
VD1 − 0.08
VD1
VD1+0.08
V
AAT8641D
VD1 − 0.08
VD1
VD1+0.08
V
AAT8641E
VD1+0.5
VD1+0.6
VD1+0.7
V
AAT8641F
VD1+0.3
VD1+0.4
VD1+0.5
V
AAT8641G
VD1+0.6
VD1+0.7
VD1+0.8
V
AAT8641H
VD1 − 0.08
VD1
VD1+0.08
V
AAT8641I
VD1 − 0.08
VD1
VD1+0.08
V
AAT8641J
VD1 − 0.08
VD1
VD1+0.08
V
AAT8641K
VD1+0.5
VD1+0.6
VD1+0.7
V
AAT8641A
0.700
1.000
1.300
s
AAT8641B
0.088
0.125
0.163
s
AAT8641C
0.700
1.000
1.300
s
AAT8641D
0.700
1.000
1.300
s
AAT8641E
0.700
1.000
1.300
s
AAT8641F
0.700
1.000
1.300
s
AAT8641G
0.088
0.125
0.163
s
AAT8641H
0.700
1.000
1.300
s
AAT8641I
0.700
1.000
1.300
s
AAT8641J
0.700
1.000
1.300
s
AAT8641K
0.700
1.000
1.300
s
AAT8641A
87.5
125.0
162.5
ms
AAT8641B
22.4
32.0
41.6
ms
AAT8641C
87.5
125.0
162.5
ms
AAT8641D
87.5
125.0
162.5
ms
AAT8641E
87.5
125.0
162.5
ms
AAT8641F
87.5
125.0
162.5
ms
AAT8641G
22.4
32.0
41.6
ms
AAT8641H
87.5
125.0
162.5
ms
AAT8641I
87.5
125.0
162.5
ms
AAT8641J
87.5
125.0
162.5
ms
AAT8641K
87.5
125.0
162.5
ms
Over Discharge Release Voltage
t C1
Over Charge Delay Time
t D1
Over Discharge Delay Time
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 16 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
SUMMARY OF AAT8641 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL DEVICE
VOC1
Over Current Level 1 Detection Voltage
VOC 2
Over Current Level 2 Detection Voltage
t OC1
Over Current Level 1 Detection Delay
Time
–
MIN
TYP
MAX
UNIT
AAT8641A
130
150
170
mV
AAT8641B
130
150
170
mV
AAT8641C
80
100
120
mV
AAT8641D
110
130
150
mV
AAT8641E
80
100
120
mV
AAT8641F
80
100
120
mV
AAT8641G
180
200
220
mV
AAT8641H
130
150
170
mV
AAT8641I
110
130
150
mV
AAT8641J
180
200
220
mV
AAT8641K
80
100
120
mV
AAT8641A
400
500
600
mV
AAT8641B
400
500
600
mV
AAT8641C
400
480
600
mV
AAT8641D
400
490
600
mV
AAT8641E
400
480
600
mV
AAT8641F
400
480
600
mV
AAT8641G
400
510
600
mV
AAT8641H
400
500
600
mV
AAT8641I
400
490
600
mV
AAT8641J
400
510
600
mV
AAT8641K
400
480
600
mV
AAT8641A
5.6
8.0
10.4
ms
AAT8641B
2.8
4.0
5.2
ms
AAT8641C
5.6
8.0
10.4
ms
AAT8641D
5.6
8.0
10.4
ms
AAT8641E
5.6
8.0
10.4
ms
AAT8641F
5.6
8.0
10.4
ms
AAT8641G
2.8
4.0
5.2
ms
AAT8641H
5.6
8.0
10.4
ms
AAT8641I
5.6
8.0
10.4
ms
AAT8641J
5.6
8.0
10.4
ms
AAT8641K
5.6
8.0
10.4
ms
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 17 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
TIMING CHART
AAT8641 (CHARGE AND DISCHARGE)
VC1
VC2
VD2
VD1
D
out
C
out
VCHR
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 18 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
TIMING CHART
AAT8641 (UNUSUAL CHARGE CURRENT, OVER CURRENT, AND SHORT
CIRCUIT)
D out
C out
Time
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 19 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
TYPICAL APPLICATION
+
R1
100Ω
C1
VDD
0.1μF
Li
Battery
VN
GND
D OUT
C OUT
R2
1kΩ
−
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 20 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
PACKAGE DIMENSION
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 21 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
PACKAGE DIMENSION (CONT.)
SYMBOLS
DIMENSIONS IN MILLIMETERS
DEMINSIONS IN INCHES
MIN
TYP
MAX
MIN
TYP
MAX
A
1.05
1.20
1.35
0.041
0.047
0.053
A1
0.05
0.10
0.15
0.002
0.004
0.006
A2
1.00
1.10
1.20
0.039
0.043
0.047
b
0.25
------
0.50
0.010
------
0.020
b1
0.25
0.40
0.45
0.010
0.016
0.018
c
0.08
------
0.20
0.003
------
0.008
c1
0.08
0.11
0.15
0.003
0.004
0.006
D
2.70
2.90
3.00
0.106
0.114
0.118
E
2.60
2.80
3.00
0.102
0.110
0.118
E1
1.50
1.60
1.70
0.059
0.063
0.067
L
0.35
0.45
0.55
0.014
0.018
0.022
L1
0.60 REF
0.024 REF
e
e1
0.95 BSC
0.037 BSC
1.90 BSC
θ
θ1
θ2
ο
0
3ο
6ο
ο
5
5ο
8ο
0.075 BSC
ο
10
7ο
10 ο
ο
0
3ο
6ο
5ο
5ο
8ο
10 ο
7ο
10 ο
NOTE:
1.
2.
3.
4.
5.
DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.20 MILLIMETERS PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.20MILLIMETERS PER SIDE.
THE PACKAGE TOP MAY BE SAMLLER THAN PACKAGE BOTTOM.
DIMENSION D AND E1 ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, INTERLEAD FLASH AND GATE BURRS, BUT
INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE MOLDED BODY.
THE SECTION B-B APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 MILLIMETERES AND
0.15 MILLIMETERS FROM THE LEAD TIP
LEAD FRAME MATERIAL: EFTEC-64T 1/2H OR H.
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 22 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
TAPE AND REEL
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 23 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
TAPE AND REEL (CONT.)
X.XXX X
± 0.0025
X.XXX
± 0.006
X.XX
± 0.025
X.X
± 0.10
X
± 0.25
UNIT: MILLIMETERS
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 24 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641 Series
ORDERING INFORMATION
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 25 of 25
V2.0