isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD242/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD242 -55 BD242A -70 BD242B -90 BD242C -115 BD242 -45 BD242A -60 BD242B -80 BD242C -100 Emitter-Base Voltage UNIT V V -5 V IC Collector Current-Continuous -3.0 A ICM Collector Current-Peak -5.0 A IB Base Current -1.0 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 3.125 ℃/W 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD242/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BD242 -45 BD242A -60 MAX IC= -30mA ;IB= 0 UNIT V BD242B -80 BD242C -100 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A -1.2 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.8 V -0.2 mA -0.3 mA -1.0 mA ICES ICEO Collector Cutoff Current Collector Cutoff Current BD242 VCE= -45V; VBE= 0 BD242A VCE= -60V; VBE= 0 BD242B VCE= -80V; VBE= 0 BD242C VCE= -100V; VBE= 0 BD242/A VCE= -30V;IB= 0 BD242B/C VCE= -60V;IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -4V 25 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 10 Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V, ftest= 1.0MHz 3.0 fT isc website：www.iscsemi.com 2 MHz isc & iscsemi is registered trademark