EC733317 -30V、 、-7A P-Channel MOSFET Description The EC733317 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: ◆ VDS = -30V,ID =-7A RDS(ON) < 36mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID(25℃) ID(70℃) IDM PD TJ,TSTG Limit -30 ±25 -7 -5.5 -40 3.1 -55 To 150 Unit V V A A A W ℃ Symbol RθJA Limit 40 Unit ℃/W Thermal Resistance Parameter Thermal Resistance,Junction-to-Ambient (Note 2) E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 4 5A16N-Rev.F001 EC733317 -30V、 、-7A P-Channel MOSFET Electrical Characteristics (TA=25℃ ℃ unless otherwise noted) Parameter Symbol Condition Min BVDSS IDSS IGSS VGS=0V ID=-250µA VDS=-30V,VGS=0V VGS=±25V,VDS=0V -30 VGS(th) VDS=VGS,ID=-250µA VGS=-4.5V, ID=-6A VGS=-10V, ID=-8A VDS=-5V,ID=-10A -1.7 Typ Max Unit -1 ±100 V µA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance RDS(ON) Forward Transconductance gFS DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss VDS=-15V,VGS=0V, F=1.0MHz -2.2 26 14 18 -3 36 18 V mΩ mΩ S 1200 260 145 PF PF PF 10 9 22 nS nS nS 8 nS 18 5 3.5 nC nC nC 24 nS 12 nC SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) tr td(off) VDS=-15V,VGS=-10V, RGEN=3Ω ID=1A tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Qg Qgs Qgd VDS=-15V,ID=-10A, VGS=-10V Trr IF=-10A, dI/dt=100A/µs Qrr DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -0.74 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 4 5A16N-Rev.F001 -30V、 、-7A P-Channel MOSFET EC733317 Typical electrical and thermal characteristics Ordering and Marking Information EC733317 X X R： ：Tape & Reel F＝ ＝DFN3*3 8L E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 4 5A16N-Rev.F001 EC733317 -30V、 、-7A P-Channel MOSFET Part Number Package Marking EC733317FR DFN3*3 8L SSFN 3317 DFN3*3 8L Package Outline Dimension E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 4 5A16N-Rev.F001