APT50M80B2VFR
APT50M80LVFR
500V 58A 0.080Ω
POWER MOS V ®
FREDFET
T-MaxTM
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
• Identical Specifications: T-MAX™ or TO-264 Package
D
• Lower Leakage
• Faster Switching
• Fast Recovery Body Diode
• Avalanche Energy Rated
G
S
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M80B2VFR _ LVFR
UNIT
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
58
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.0
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
232
-55 to 150
°C
300
Amps
58
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 29A)
TYP
MAX
UNIT
Volts
0.080
Ohms
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
12-2003
Characteristic / Test Conditions
050-5912 Rev B
Symbol
APT50M80B2VFR_LVFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
8797
Coss
Output Capacitance
VDS = 25V
1286
Crss
Reverse Transfer Capacitance
f = 1 MHz
562
VGS = 10V
423
VDD = 250V
ID = 58A @ 25°C
41
214
Turn-on Delay Time
VGS = 15V
14
Rise Time
VDD = 250V
25
ID = 58A @ 25°C
64
RG = 0.6Ω
23
Qg
Total Gate Charge
3
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
t d(on)
tr
t d(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
58
Continuous Source Current (Body Diode)
IS
UNIT
Amps
ISM
Pulsed Source Current
1
(Body Diode)
232
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -58A)
1.3
Volts
dv/
Peak Diode Recovery
5
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -58A, di/dt = 100A/µs)
Tj = 25°C
270
Tj = 125°C
540
Q rr
Reverse Recovery Charge
(IS = -58A, di/dt = 100A/µs)
Tj = 25°C
2.7
Tj = 125°C
5.9
IRRM
Peak Recovery Current
(IS = -58A, di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
22.5
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.20
40
1 Repetitive Rating: Pulse width limited by maximum junction
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.78mH, R = 25Ω, Peak I = 58A
j
G
L
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS ≤ -58A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
0.20
0.9
0.15
0.7
0.5
0.10
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5912 Rev B
12-2003
0.25
0.3
t2
0.05
0
t1
Duty Factor D = t1/t2
0.1
0.05
10-5
SINGLE PULSE
10-4
10-3
Peak TJ = PDM x ZθJC + TC
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT50M80B2VFR_LVFR
160
0.0302
Power
(watts)
0.0729
0.0955
0.00809F
0.0182F
0.264F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
15 &10V
7V
140
120
6V
100
5.5V
80
60
5V
40
4.5V
20
4V
0
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
70
60
50
40
TJ = -55°C
30
TJ = +25°C
20
TJ = +125°C
10
0
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
1.2
1.1
VGS=10V
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
D
GS
0.95
0.90
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.00
1.2
= 29A
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
V
1.10
0.85
-50
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
GS
1.3
1.15
60
0
NORMALIZED TO
V
= 10V @ 29A
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
12-2003
0
1.4
050-5912 Rev B
ID, DRAIN CURRENT (AMPERES)
90
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
APT50M80B2VFR_LVFR
232
30,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Coss
100
16
= 58A
12
VDS=100V
8
VDS=250V
VDS=400V
4
0
1,000
10mS
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Ciss
Crss
1
I
10,000
0
100 200 300 400 500 600 700
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 (L) Package Outline
T-MAX™(B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
200
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
12-2003
050-5912 Rev B
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.